Giovanni Isella

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Współautorzy

Daniel ChrastinaAssociate Professor, Politecnico di MilanoZweryfikowany adres z polimi.it
Jacopo FrigerioPolitecnico di MilanoZweryfikowany adres z polimi.it
Douglas J PaulRoyal Academy of Engineering Chair in Emerging Technologies, University of GlasgowZweryfikowany adres z glasgow.ac.uk
Paolo BiagioniAssociate Professor, Physics Department, Politecnico di Milano (IT)Zweryfikowany adres z polimi.it
Stefano CecchiUniversity of Milano BicoccaZweryfikowany adres z unimib.it
Kevin GallacherUniversity of GlasgowZweryfikowany adres z glasgow.ac.uk
Michele OrtolaniSapienza University of RomeZweryfikowany adres z roma1.infn.it
Franco CiccacciDipartimento di Fisica, Politecnico di MIlanoZweryfikowany adres z polimi.it
Antonio SamarelliSenior Process Integration Engineer, CST GlobalZweryfikowany adres z compoundsemi.co.uk
Leonetta BaldassarreDepartment of Physics, "Sapienza" University of RomeZweryfikowany adres z roma1.infn.it
Stefano SanguinettiProfessor of Condensed Matter Phsyics, Materials Science Department, University of Milano BicoccaZweryfikowany adres z unimib.it
Claudiu V. FalubTechnology Scouting Manager, EvatecZweryfikowany adres z evatecnet.com
Marco FinazziProfessor of Physics, Physics Department - Politecnico di Milano, ItalyZweryfikowany adres z fisi.polimi.it
Monica BollaniIFN-CNRZweryfikowany adres z polimi.it
Sangam ChatterjeeInstitute for Experimental Physics I, Justus-Liebig-University GiessenZweryfikowany adres z physik.uni-giessen.de
Valeria GilibertiIstituto Italiano di Tecnologia, Center for Life Nano science - CLNSZweryfikowany adres z iit.it
antonia neelsEmpaZweryfikowany adres z empa.ch
Ross MillarRoyal Academy of Engineering Research Fellow, University of GlasgowZweryfikowany adres z glasgow.ac.uk
Marco P. FischerChair for Ultrafast Phenomena and Photonics, Prof. Dr. Leitenstorfer, University of Konstanz, GermanyZweryfikowany adres z uni-konstanz.de
Sergio BiettiPh.D., Dipartimento di Scienza dei Materiali, Università di Milano-BicoccaZweryfikowany adres z unimib.it

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Giovanni Isella

Politecnico di Milano

Zweryfikowany adres z polimi.it

semiconductors


Tytuł Sortuj wg cytatów Sortuj wg roku Sortuj wg tytułu	Cytowane przez Cytowane przez	Rok
Analysis of enhanced light emission from highly strained germanium microbridges MJ Süess, R Geiger, RA Minamisawa, G Schiefler, J Frigerio, D Chrastina, ... Nature Photonics 7 (6), 466-472, 2013	494	2013
Integrated germanium optical interconnects on silicon substrates P Chaisakul, D Marris-Morini, J Frigerio, D Chrastina, MS Rouifed, ... Nature Photonics 8 (6), 482-488, 2014	276	2014
Midinfrared plasmon-enhanced spectroscopy with germanium antennas on silicon substrates L Baldassarre, E Sakat, J Frigerio, A Samarelli, K Gallacher, E Calandrini, ... Nano letters 15 (11), 7225-7231, 2015	225	2015
Scaling hetero-epitaxy from layers to three-dimensional crystals CV Falub, H von Känel, F Isa, R Bergamaschini, A Marzegalli, ... Science 335 (6074), 1330-1334, 2012	208	2012
Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices G Isella, D Chrastina, B Rössner, T Hackbarth, HJ Herzog, U König, ... Solid-State Electronics 48 (8), 1317-1323, 2004	208	2004
Germanium-based integrated photonics from near-to mid-infrared applications D Marris-Morini, V Vakarin, JM Ramirez, Q Liu, A Ballabio, J Frigerio, ... Nanophotonics 7 (11), 1781-1793, 2018	202	2018
23 GHz Ge/SiGe multiple quantum well electro-absorption modulator P Chaisakul, D Marris-Morini, MS Rouifed, G Isella, D Chrastina, ... Optics Express 20 (3), 3219-3224, 2012	168	2012
A singlet-triplet hole spin qubit in planar Ge D Jirovec, A Hofmann, A Ballabio, PM Mutter, G Tavani, M Botifoll, ... Nature Materials 20 (8), 1106-1112, 2021	149	2021
Graded SiGe waveguides with broadband low-loss propagation in the mid infrared JM Ramirez, Q Liu, V Vakarin, J Frigerio, A Ballabio, X Le Roux, ... Optics express 26 (2), 870-877, 2018	125	2018
Direct-Gap Gain and Optical Absorption in Germanium Correlated to the Density<? format?> of Photoexcited Carriers, Doping, and Strain L Carroll, P Friedli, S Neuenschwander, H Sigg, S Cecchi, F Isa, ... Physical review letters 109 (5), 057402, 2012	125	2012
Optical spin injection and spin lifetime in Ge heterostructures F Pezzoli, F Bottegoni, D Trivedi, F Ciccacci, A Giorgioni, P Li, S Cecchi, ... Physical Review Letters 108 (15), 156603, 2012	122	2012
Ultralow dark current Ge/Si (100) photodiodes with low thermal budget J Osmond, G Isella, D Chrastina, R Kaufmann, M Acciarri, H Von Känel Applied physics letters 94 (20), 2009	119	2009
Scattering mechanisms in high-mobility strained Ge channels B Rössner, D Chrastina, G Isella, H Von Känel Applied Physics Letters 84 (16), 3058-3060, 2004	113	2004
Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures F Pezzoli, E Bonera, E Grilli, M Guzzi, S Sanguinetti, D Chrastina, G Isella, ... Materials science in semiconductor processing 11 (5-6), 279-284, 2008	112	2008
Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion C Lange, NS Köster, S Chatterjee, H Sigg, D Chrastina, G Isella, ... Physical Review B—Condensed Matter and Materials Physics 79 (20), 201306, 2009	106	2009
Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics J Frigerio, A Ballabio, G Isella, E Sakat, G Pellegrini, P Biagioni, M Bollani, ... Physical Review B 94 (8), 085202, 2016	104	2016
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers M Bonfanti, E Grilli, M Guzzi, M Virgilio, G Grosso, D Chrastina, G Isella, ... Physical Review B—Condensed Matter and Materials Physics 78 (4), 041407, 2008	101	2008
Excess carrier lifetimes in Ge layers on Si R Geiger, J Frigerio, MJ Süess, D Chrastina, G Isella, R Spolenak, J Faist, ... Applied Physics Letters 104 (6), 2014	100	2014
The thermoelectric properties of Ge/SiGe modulation doped superlattices A Samarelli, L Ferre Llin, S Cecchi, J Frigerio, T Etzelstorfer, E Müller, ... Journal of applied physics 113 (23), 2013	98	2013
Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition H Känel, M Kummer, G Isella, E Müller, T Hackbarth Applied physics letters 80 (16), 2922-2924, 2002	96	2002

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