| Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing BH Lee, L Kang, R Nieh, WJ Qi, JC Lee Applied Physics Letters 76 (14), 1926-1928, 2000 | 792 | 2000 |
| Charge-transfer-based Gas Sensing Using Atomic-layer MoS2 B Cho, MG Hahm, M Choi, J Yoon, AR Kim, YJ Lee, SG Park, JD Kwon, ... Scientific reports 5 (1), 8052, 2015 | 657 | 2015 |
| Chemical Sensing of 2D Graphene/MoS2 Heterostructure device B Cho, J Yoon, SK Lim, AR Kim, DH Kim, SG Park, JD Kwon, YJ Lee, ... ACS applied materials & interfaces 7 (30), 16775-16780, 2015 | 476 | 2015 |
| Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application BH Lee, L Kang, WJ Qi, R Nieh, Y Jeon, K Onishi, JC Lee International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999 | 405 | 1999 |
| Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes J Yoon, W Park, GY Bae, Y Kim, HS Jang, Y Hyun, SK Lim, YH Kahng, ... Small 9 (19), 3295-3300, 2013 | 375 | 2013 |
| Negative oxygen vacancies in HfO2 as charge traps in high-k stacks JL Gavartin, D Muñoz Ramo, AL Shluger, G Bersuker, BH Lee Applied Physics Letters 89 (8), 2006 | 375 | 2006 |
| Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric L Kang, BH Lee, WJ Qi, Y Jeon, R Nieh, S Gopalan, K Onishi, JC Lee IEEE Electron Device Letters 21 (4), 181-183, 2000 | 348 | 2000 |
| Neuromorphic hardware system for visual pattern recognition with memristor array and CMOS neuron M Chu, B Kim, S Park, H Hwang, M Jeon, BH Lee, BG Lee IEEE Transactions on Industrial Electronics 62 (4), 2410-2419, 2014 | 330 | 2014 |
| Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device K Seo, I Kim, S Jung, M Jo, S Park, J Park, J Shin, KP Biju, J Kong, K Lee, ... Nanotechnology 22 (25), 254023, 2011 | 322 | 2011 |
| MOSCAP and MOSFET characteristics using ZrO/sub 2/gate dielectric deposited directly on Si WJ Qi, R Nieh, BH Lee, L Kang, Y Jeon, K Onishi, T Ngai, S Banerjee, ... International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999 | 259 | 1999 |
| High-density low-power-operating DRAM device adopting 6F/sup 2/cell scheme with novel S-RCAT structure on 80nm feature size and beyond HJ Oh, JY Kim, JH Kim, SG Park, DH Kim, SE Kim, DS Woo, YS Lee, ... Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005 | 256 | 2005 |
| The excellent scalability of the RCAT (recess-channel-array-transistor) technology for sub-70nm DRAM feature size and beyond JY Kim, DS Woo, HJ Oh, HJ Kim, SE Kim, BJ Park, JM Kwon, MS Shim, ... IEEE VLSI-TSA International Symposium on VLSI Technology, 2005.(VLSI-TSA …, 2005 | 255 | 2005 |
| Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application WJ Qi, R Nieh, BH Lee, L Kang, Y Jeon, JC Lee Applied Physics Letters 77 (20), 3269-3271, 2000 | 242 | 2000 |
| Gate stack technology for nanoscale devices BH Lee, J Oh, HH Tseng, R Jammy, H Huff materials today 9 (6), 32-40, 2006 | 240 | 2006 |
| RRAM-based synapse for neuromorphic system with pattern recognition function S Park, H Kim, M Choo, J Noh, A Sheri, S Jung, K Seo, J Park, S Kim, ... 2012 international electron devices meeting, 10.2. 1-10.2. 4, 2012 | 227 | 2012 |
| A Novel Pattern Transfer Process for Bonded SOI Giga-bit DRAMs BH Lee, GJ Bae, KW Lee, G Cha, WD Kim, SI Lee, T Barge, ... 1996 IEEE International SOI Conference Proceedings, 114-115, 1996 | 219 | 1996 |
| Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning PD Kirsch, P Sivasubramani, J Huang, CD Young, MA Quevedo-Lopez, ... Applied Physics Letters 92 (9), 2008 | 218 | 2008 |
| Sub‐10 nm graphene nanoribbon array field‐effect transistors fabricated by block copolymer lithography JG Son, M Son, KJ Moon, BH Lee, JM Myoung, MS Strano, MH Ham, ... Advanced Materials 25 (34), 4723-4728, 2013 | 212 | 2013 |
| Electronic system with memristive synapses for pattern recognition S Park, M Chu, J Kim, J Noh, M Jeon, B Hun Lee, H Hwang, B Lee, B Lee Scientific reports 5 (1), 10123, 2015 | 208 | 2015 |
| Neuromorphic speech systems using advanced ReRAM-based synapse S Park, A Sheri, J Kim, J Noh, J Jang, M Jeon, B Lee, BR Lee, BH Lee, ... 2013 IEEE International Electron Devices Meeting, 25.6. 1-25.6. 4, 2013 | 206 | 2013 |
Rino ChoiProfessor of Materials Science and Eng., Inha UniversityZweryfikowany adres z inha.ac.kr