Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application YC Yang, F Pan, Q Liu, M Liu, F Zeng
Nano letters 9 (4), 1636-1643, 2009
1007 2009 Two-dimensional materials for next-generation computing technologies C Liu, H Chen, S Wang, Q Liu, YG Jiang, DW Zhang, M Liu, P Zhou
Nature Nanotechnology 15 (7), 545-557, 2020
815 2020 Real‐time observation on dynamic growth/dissolution of conductive filaments in oxide‐electrolyte‐based ReRAM Q Liu, J Sun, H Lv, S Long, K Yin, N Wan, Y Li, L Sun, M Liu
Advanced Materials 24 (14), 1844, 2012
732 2012 Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
652 2019 Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode Q Liu, S Long, H Lv, W Wang, J Niu, Z Huo, J Chen, M Liu
ACS nano 4 (10), 6162-6168, 2010
491 2010 Memristor with Ag‐Cluster‐Doped TiO2 Films as Artificial Synapse for Neuroinspired Computing X Yan, J Zhao, S Liu, Z Zhou, Q Liu, J Chen, XY Liu
Advanced Functional Materials 28 (1), 1705320, 2018
470 2018 Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications Y Wang, Q Liu, S Long, W Wang, Q Wang, M Zhang, S Zhang, Y Li, Q Zuo, ...
Nanotechnology 21 (4), 045202, 2009
388 2009 An artificial neuron based on a threshold switching memristor X Zhang, W Wang, Q Liu, X Zhao, J Wei, R Cao, Z Yao, X Zhu, F Zhang, ...
IEEE Electron Device Letters 39 (2), 308-311, 2017
361 2017 An artificial spiking afferent nerve based on Mott memristors for neurorobotics X Zhang, Y Zhuo, Q Luo, Z Wu, R Midya, Z Wang, W Song, R Wang, ...
Nature communications 11 (1), 51, 2020
358 2020 Vacancy‐Induced Synaptic Behavior in 2D WS2 Nanosheet–Based Memristor for Low‐Power Neuromorphic Computing X Yan, Q Zhao, AP Chen, J Zhao, Z Zhou, J Wang, H Wang, L Zhang, X Li, ...
Small 15 (24), 1901423, 2019
358 2019 Resistive switching memory effect of ZrO2 films with Zr+ implanted Q Liu, W Guan, S Long, R Jia, M Liu, J Chen
Applied physics letters 92 (1), 2008
354 2008 Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology H Sun, Q Liu, C Li, S Long, H Lv, C Bi, Z Huo, L Li, M Liu
Advanced Functional Materials 24 (36), 5679-5686, 2014
352 2014 Heterojunction of facet coupled g-C3N4/surface-fluorinated TiO2 nanosheets for organic pollutants degradation under visible LED light irradiation K Dai, L Lu, C Liang, Q Liu, G Zhu
Applied Catalysis B: Environmental 156, 331-340, 2014
342 2014 Nonpolar Nonvolatile Resistive Switching in Cu Doped W Guan, S Long, Q Liu, M Liu, W Wang
IEEE Electron Device Letters 29 (5), 434-437, 2008
322 2008 Self‐assembled networked PbS distribution quantum dots for resistive switching and artificial synapse performance boost of memristors X Yan, Y Pei, H Chen, J Zhao, Z Zhou, H Wang, L Zhang, J Wang, X Li, ...
Advanced materials 31 (7), 1805284, 2019
297 2019 Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning X Yan, L Zhang, H Chen, X Li, J Wang, Q Liu, C Lu, J Chen, H Wu, P Zhou
Advanced Functional Materials 28 (40), 1803728, 2018
271 2018 Improvement of Resistive Switching Properties in ReRAM With Implanted Ti Ions Q Liu, S Long, W Wang, Q Zuo, S Zhang, J Chen, M Liu
IEEE Electron Device Letters 30 (12), 1335-1337, 2009
265 2009 On the resistive switching mechanisms of Cu/ZrO2: Cu/Pt W Guan, M Liu, S Long, Q Liu, W Wang
Applied Physics Letters 93 (22), 2008
239 2008 Memory materials and devices: From concept to application Z Zhang, Z Wang, T Shi, C Bi, F Rao, Y Cai, Q Liu, H Wu, P Zhou
InfoMat 2 (2), 261-290, 2020
238 2020 Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory S Liu, N Lu, X Zhao, H Xu, W Banerjee, H Lv, S Long, Q Li, Q Liu, M Liu
Adv. Mater 28 (48), 10623-10629, 2016
237 2016 
Hangbing LvInstitute of Microelectronics, Chinese Academy of SciencesZweryfikowany adres z ime.ac.cn