Aboozar Mosleh

Cytowane przez

	Wszystkie	Od 2020
Cytowania	2603	1427
h-indeks	24	20
i10-indeks	40	30

360

180

270

20142015201620172018201920202021202220232024202540 118 172 224 339 278 288 344 260 258 247 30

Dostęp publiczny

Wyświetl wszystko

23 artykuły

6 artykułów

dostępne

niedostępne

Objęte finansowaniem

Współautorzy

Shui-Qing (Fisher) YuUniversity of ArkansasZweryfikowany adres z uark.edu
Wei DuAssociate Professor, Department of Electrical Engineering, University of ArkansasZweryfikowany adres z uark.edu
Hameed NaseemProfessor of Electrical Engineering, University of ArkansasZweryfikowany adres z uark.edu
Joe Margetis, PhDApplied MaterialsZweryfikowany adres z amat.com
Richard A. SorefResearch Professor of Engineering, The University of Massachusetts at BostonZweryfikowany adres z rcn.com
Greg SunAPS and Optica Fellow, Professor of Engineering Department, UMass BostonZweryfikowany adres z umb.edu
Wei DouUniversity of Arkansas, FayettevilleZweryfikowany adres z email.uark.edu
Yiyin ZhouUniversity of ArkansasZweryfikowany adres z uark.edu
Jifeng LiuProfessor, Thayer School of Engineering, Dartmouth College; Fellow, OSA (now OPTICA)Zweryfikowany adres z dartmouth.edu
Mourad BenamaraInstitute for Nanoscience & Engineering, University of ArkansasZweryfikowany adres z uark.edu
Murtadha AlherUniversity of KerbalaZweryfikowany adres z uokerbala.edu.iq
Larry CousarElectrical Engineering PhD student, Arizona State UniversityZweryfikowany adres z asu.edu
Seyedeh Fahimeh BanihashemianUniversity of ArkansasZweryfikowany adres z uark.edu
Andrian V. Kuchuk, А.В. Кучук, А. Кучу...Institute for Nanoscience & Engineering, University of Arkansas, Fayetteville, USAZweryfikowany adres z uark.edu
Husam H. Abu-SafeGerman Jordanian UniversityZweryfikowany adres z gju.edu.jo
Gregory SalamoProfessor of Physics, University of ArkansasZweryfikowany adres z uark.edu
Vitaliy DoroganLecturer, New York City College of Technology (City Tech), CUNYZweryfikowany adres z citytech.cuny.edu
Dongsheng FanUniversity of ArkansasZweryfikowany adres z email.uark.edu
Yuriy I. MazurInstitute for Nanoscience and Engineering, University of ArkansasZweryfikowany adres z uark.edu
Yusheng BianGlobalFoundries, Distinguished Engineer & Master InventorZweryfikowany adres z psu.edu

Obserwuj

Aboozar Mosleh

Assistant Professor of Nanoscience, University of Arkansas at Pine Bluff

Zweryfikowany adres z uapb.edu - Strona główna

Nanophotonics Silicon Photonics Epitaxy CVD GeSn


Tytuł Sortuj wg cytatów Sortuj wg roku Sortuj wg tytułu	Cytowane przez Cytowane przez	Rok
An optically pumped 2.5 μm GeSn laser on Si operating at 110 K S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ... Applied Physics Letters 109 (17), 2016	253	2016
Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ... Applied Physics Letters 105 (15), 2014	239	2014
Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ... ACs Photonics 5 (3), 827-833, 2017	209	2017
Systematic study of Ge1− xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics H Tran, W Du, SA Ghetmiri, A Mosleh, G Sun, RA Soref, J Margetis, J Tolle, ... Journal of Applied Physics 119 (10), 2016	163	2016
Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth W Dou, M Benamara, A Mosleh, J Margetis, P Grant, Y Zhou, S Al-Kabi, ... Scientific reports 8 (1), 5640, 2018	153	2018
Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates W Du, Y Zhou, SA Ghetmiri, A Mosleh, BR Conley, A Nazzal, RA Soref, ... Applied Physics Letters 104 (24), 2014	107	2014
Competition of optical transitions between direct and indirect bandgaps in Ge1− xSnx W Du, SA Ghetmiri, BR Conley, A Mosleh, A Nazzal, RA Soref, G Sun, ... Applied Physics Letters 105 (5), 2014	102	2014
Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection BR Conley, A Mosleh, SA Ghetmiri, W Du, RA Soref, G Sun, J Margetis, ... Optics express 22 (13), 15639-15652, 2014	102	2014
Growth and characterization of epitaxial Ge1-XSnx alloys and heterostructures using a commercial CVD system J Margetis, SA Ghetmiri, W Du, BR Conley, A Mosleh, R Soref, G Sun, ... ECS Transactions 64 (6), 711, 2014	101	2014
Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications Y Zhou, W Dou, W Du, T Pham, SA Ghetmiri, S Al-Kabi, A Mosleh, M Alher, ... Journal of Applied Physics 120, 023102, 2016	96	2016
Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff BR Conley, J Margetis, W Du, H Tran, A Mosleh, SA Ghetmiri, J Tolle, ... Applied Physics Letters 105 (22), 2014	95	2014
Material Characterization of Ge_1−xSn_x Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications A Mosleh, SA Ghetmiri, BR Conley, M Hawkridge, M Benamara, A Nazzal, ... Journal of electronic materials 43, 938-946, 2014	88	2014
Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas J Margetis, A Mosleh, S Al-Kabi, SA Ghetmiri, W Du, W Dou, M Benamara, ... Journal of Crystal Growth 463, 128-133, 2017	68	2017
All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K J Margetis, Y Zhou, W Dou, PC Grant, B Alharthi, W Du, A Wadsworth, ... Applied Physics Letters 113 (22), 2018	63	2018
Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics SA Ghetmiri, Y Zhou, J Margetis, S Al-Kabi, W Dou, A Mosleh, W Du, ... Optics Letters 42 (3), 387-390, 2017	54	2017
Monolithically integrated silicon nitride platform Y Bian, C Meagher, K Nummy, S Chandran, WS Lee, A Aboketaf, D Ma, ... Optical Fiber Communication Conference, Th1A. 46, 2021	51	2021
Fundamentals of Ge1− xSnx and SiyGe1− x-ySnx RPCVD epitaxy J Margetis, A Mosleh, SA Ghetmiri, S Al-Kabi, W Dou, W Du, N Bhargava, ... Materials Science in Semiconductor Processing 70, 38-43, 2017	51	2017
Shortwave-infrared photoluminescence from Ge1− xSnx thin films on silicon SA Ghetmiri, W Du, BR Conley, A Mosleh, A Nazzal, G Sun, RA Soref, ... Journal of Vacuum Science & Technology B 32 (6), 2014	45	2014
UHV-CVD growth of high quality GeSn using SnCl₄: from material growth development to prototype devices PC Grant, W Dou, B Alharthi, JM Grant, H Tran, G Abernathy, A Mosleh, ... Optical Materials Express 9 (8), 3277-3291, 2019	43	2019
Optical Characterization of Si-Based Ge1− x Sn x Alloys with Sn Compositions up to 12% S Al-Kabi, SA Ghetmiri, J Margetis, W Du, A Mosleh, M Alher, W Dou, ... Journal of Electronic Materials 45 (4), 2133–2141, 2016	40	2016

Nie można teraz wykonać tej operacji. Spróbuj ponownie później.

Prace 1–20

Cytowania rocznie

Powielone cytowania

Scalone cytowania

Dodaj współautorówWspółautorzy

Obserwuj

Cytowane przez

Współautorzy