Core-level spectroscopy of the clean Si(001) surface: Charge transfer within asymmetric dimers of the 2×1 and c (4×2) reconstructions E Landemark, CJ Karlsson, YC Chao, RIG Uhrberg
Physical review letters 69 (10), 1588, 1992
455 1992 Photoelectron spectroscopy of surface states on semiconductor surfaces GV Hansson, RIG Uhrberg
Surface science reports 9 (5-6), 197-292, 1988
276 1988 Symmetric arsenic dimers on the Si (100) surface RIG Uhrberg, RD Bringans, RZ Bachrach, JE Northrup
Physical review letters 56 (5), 520, 1986
247 1986 Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si (111) surface RIG Uhrberg, RD Bringans, MA Olmstead, RZ Bachrach, JE Northrup
Physical Review B 35 (8), 3945, 1987
238 1987 Experimental evidence for one highly dispersive dangling-bond band on Si (111) 2× 1 RIG Uhrberg, GV Hansson, JM Nicholls, SA Flodström
Physical Review Letters 48 (15), 1032, 1982
238 1982 Surface-state band structure of the Si (100) 2× 1 surface studied with polarization-dependent angle-resolved photoemission on single-domain surfaces LSO Johansson, RIG Uhrberg, P Mårtensson, GV Hansson
Physical Review B 42 (2), 1305, 1990
223 1990 Photoemission study of the surface and bulk electronic structures of Si (111) 7× 7 and Si (111)≤ 3×≤ 3: Al RIG Uhrberg, GV Hansson, JM Nicholls, PES Persson, SA Flodström
Physical Review B 31 (6), 3805, 1985
218 1985 Photoemission study of bonding at the MA Olmstead, RIG Uhrberg, RD Bringans, RZ Bachrach
Physical Review B 35 (14), 7526, 1987
209 1987 Experimental studies of the dangling-and dimer-bond-related surface electron bands on Si (100)(2× 1) RIG Uhrberg, GV Hansson, JM Nicholls, SA Flodström
Physical Review B 24 (8), 4684, 1981
191 1981 Arsenic overlayer on Si (111): Removal of surface reconstruction MA Olmstead, RD Bringans, RIG Uhrberg, RZ Bachrach
Physical Review B 34 (8), 6041, 1986
177 1986 Surface bands for single-domain 2× 1 reconstructed Si (100) and Si (100): As. Photoemission results for off-axis crystals RD Bringans, RIG Uhrberg, MA Olmstead, RZ Bachrach
Physical Review B 34 (10), 7447, 1986
176 1986 Abrupt rotation of the Rashba spin to the direction perpendicular to the surface K Sakamoto, T Oda, A Kimura, K Miyamoto, M Tsujikawa, A Imai, N Ueno, ...
Physical review letters 102 (9), 096805, 2009
166 2009 Arsenic-terminated Ge (111): An ideal 1× 1 surface RD Bringans, RIG Uhrberg, RZ Bachrach, JE Northrup
Physical review letters 55 (5), 533, 1985
152 1985 Fermi-level pinning and surface-state band structure of the Si(111)-(√3×√3)R 30°-Ag surface LSO Johansson, E Landemark, CJ Karlsson, RIG Uhrberg
Physical review letters 63 (19), 2092, 1989
149 1989 Structure of low-coverage phases of Al, Ga, and In on Si (100) JE Northrup, MC Schabel, CJ Karlsson, RIG Uhrberg
Physical Review B 44 (24), 13799, 1991
148 1991 Hydrogen intercalation of graphene grown on 6H-SiC (0001) S Watcharinyanon, C Virojanadara, JR Osiecki, AA Zakharov, ...
Surface Science 605 (17-18), 1662-1668, 2011
146 2011 Interface formation of GaAs with Si (100), Si (111), and Ge (111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and As RD Bringans, MA Olmstead, RIG Uhrberg, RZ Bachrach
Physical Review B 36 (18), 9569, 1987
146 1987 Hydrogen chemisorption on Si (111) 7× 7 studied with surface-sensitive core-level spectroscopy and angle-resolved photoemission CJ Karlsson, E Landemark, LSO Johansson, UO Karlsson, RIG Uhrberg
Physical Review B 41 (3), 1521, 1990
135 1990 Atomic origins of the surface components in the Si 2p core-level spectra of the Si(111)7×7 surface CJ Karlsson, E Landemark, YC Chao, RIG Uhrberg
Physical Review B 50 (8), 5767, 1994
131 1994 Initial formation of the interface between a polar insulator and a nonpolar semiconductor: CaF2 on Si(111) MA Olmstead, RIG Uhrberg, RD Bringans, RZ Bachrach
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986
120 1986 