Artykuły udostępnione publicznie: - Wenjing JieWięcej informacji
Niedostępne w żadnym miejscu: 13
Memristor based on inorganic and organic two-dimensional materials: mechanisms, performance, and synaptic applications
K Liao, P Lei, M Tu, S Luo, T Jiang, W Jie, J Hao
ACS Applied Materials & Interfaces 13 (28), 32606-32623, 2021
Upoważnienia: National Natural Science Foundation of China, Research Grants Council, Hong Kong
High‐performance memristor based on 2d layered bioi nanosheet for low‐power artificial optoelectronic synapses
P Lei, H Duan, L Qin, X Wei, R Tao, Z Wang, F Guo, M Song, W Jie, J Hao
Advanced Functional Materials 32 (25), 2201276, 2022
Upoważnienia: National Natural Science Foundation of China, Research Grants Council, Hong Kong
Low-power memristor based on two-dimensional materials
H Duan, S Cheng, L Qin, X Zhang, B Xie, Y Zhang, W Jie
The Journal of Physical Chemistry Letters 13 (31), 7130-7138, 2022
Upoważnienia: National Natural Science Foundation of China
Introduction of defects in hexagonal boron nitride for vacancy-based 2D memristors
H Chen, Y Kang, D Pu, M Tian, N Wan, Y Xu, B Yu, W Jie, Y Zhao
Nanoscale 15 (9), 4309-4316, 2023
Upoważnienia: National Natural Science Foundation of China
Combustion synthesis of high-performance high-entropy dielectric ceramics for energy storage applications
C Zuo, S Yang, Z Cao, W Jie, X Wei
Ceramics International 49 (15), 25486-25494, 2023
Upoważnienia: National Natural Science Foundation of China
Phase coexistence induced strong piezoelectricity in K 0.5 Na 0.5 NbO 3-based lead-free ceramics
Y Yang, H Wang, Y Li, Q Zheng, J Liao, W Jie, D Lin
Dalton Transactions 48 (28), 10676-10682, 2019
Upoważnienia: National Natural Science Foundation of China
Controllable digital and analog resistive switching behavior of 2D layered WSe 2 nanosheets for neuromorphic computing
S Cheng, L Zhong, J Yin, H Duan, Q Xie, W Luo, W Jie
Nanoscale 15 (10), 4801-4808, 2023
Upoważnienia: National Natural Science Foundation of China
Co-existence of bipolar nonvolatile and volatile resistive switching based on WO3 nanowire for applications in neuromorphic computing and selective memory
L Qin, S Cheng, B Xie, X Wei, W Jie
Applied Physics Letters 121 (9), 2022
Upoważnienia: National Natural Science Foundation of China
Observation of nonvolatile resistive switching behaviors in 2D layered InSe nanosheets through controllable oxidation
Y Tang, P Lei, K Liao, T Jiang, S Chen, Q Xie, W Luo, Y Zhao, W Jie
Applied Physics Letters 119 (13), 2021
Upoważnienia: National Natural Science Foundation of China
An Artificial Electrical-Chemical Mixed Synapse Based on Ion-Gated MoS2 Nanosheets for Real-Time Facilitation Index Tuning
Y Ke, L Mao, W Jie, T Gong, W Huang, X Zhang
ACS Applied Materials & Interfaces 13 (13), 15755-15760, 2021
Upoważnienia: National Natural Science Foundation of China
Chemical-vapor-deposited 2D VSe 2 nanosheet with threshold switching behaviors for Boolean logic calculations and leaky integrate-and-fire functions
L Zhong, W Xie, J Yin, W Jie
Journal of Materials Chemistry C 11 (15), 5032-5038, 2023
Upoważnienia: National Natural Science Foundation of China
Phase transition induced threshold resistive switching in two-dimensional VTe2 nanosheets for Boolean logic operations
L Zhong, M Li, S Yan, W Jie
Applied Physics Letters 123 (7), 2023
Upoważnienia: National Natural Science Foundation of China
Ferroelectric Modulation of ReS
Z Dang, F Guo, Y Zhao, K Jin, W Jie, J Hao
Upoważnienia: National Natural Science Foundation of China, Research Grants Council, Hong Kong
Dostępne w jakimś miejscu: 31
Exceptional Tunability of Band Energy in a Compressively Strained Trilayer MoS2 Sheet
YY Hui, X Liu, W Jie, NY Chan, J Hao, YT Hsu, LJ Li, W Guo, SP Lau
ACS nano 7 (8), 7126-7131, 2013
Upoważnienia: Research Grants Council, Hong Kong
Wafer-scale synthesis of high-quality semiconducting two-dimensional layered InSe with broadband photoresponse
Z Yang, W Jie, CH Mak, S Lin, H Lin, X Yang, F Yan, SP Lau, J Hao
ACS nano 11 (4), 4225-4236, 2017
Upoważnienia: National Natural Science Foundation of China, Research Grants Council, Hong Kong
Ferroelectric and piezoelectric effects on the optical process in advanced materials and devices
Y Zhang, W Jie, P Chen, W Liu, J Hao
Advanced Materials 30 (34), 1707007, 2018
Upoważnienia: National Natural Science Foundation of China, Research Grants Council, Hong Kong
Colossal permittivity materials as superior dielectrics for diverse applications
Y Wang, W Jie, C Yang, X Wei, J Hao
Advanced Functional Materials 29 (27), 1808118, 2019
Upoważnienia: Research Grants Council, Hong Kong
White and green light emissions of flexible polymer composites under electric field and multiple strains
L Chen, MC Wong, G Bai, W Jie, J Hao
Nano Energy 14, 372-381, 2015
Upoważnienia: National Natural Science Foundation of China, Research Grants Council, Hong Kong
Three-terminal memtransistors based on two-dimensional layered gallium selenide nanosheets for potential low-power electronics applications
Y Yang, H Du, Q Xue, X Wei, Z Yang, C Xu, D Lin, W Jie, J Hao
Nano Energy 57, 566-573, 2019
Upoważnienia: National Natural Science Foundation of China, Research Grants Council, Hong Kong
Graphene/gallium arsenide-based Schottky junction solar cells
W Jie, F Zheng, J Hao
Applied physics letters 103 (23), 2013
Upoważnienia: Research Grants Council, Hong Kong
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