SiGe HBT technology with fT /fmax of 300GHz/500GHz and 2.0 ps CML gate delay B Heinemann, R Barth, D Bolze, J Drews, GG Fischer, A Fox, O Fursenko, ...
2010 International Electron Devices Meeting, 30.5. 1-30.5. 4, 2010
309 2010 Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz S Lischke, A Peczek, JS Morgan, K Sun, D Steckler, Y Yamamoto, ...
Nature Photonics 15 (12), 925-931, 2021
228 2021 A 0.13 H Rücker, B Heinemann, W Winkler, R Barth, J Borngraber, J Drews, ...
IEEE Journal of Solid-State Circuits 45 (9), 1678-1686, 2010
224 2010 Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD Y Yamamoto, P Zaumseil, T Arguirov, M Kittler, B Tillack
Solid-State Electronics 60 (1), 2-6, 2011
177 2011 Novel collector design for high-speed SiGe: C HBTs B Heinemann, H Rucker, R Barth, J Bauer, D Bolze, E Bugiel, J Drews, ...
Digest. International Electron Devices Meeting,, 775-778, 2002
127 2002 Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process G Capellini, C Reich, S Guha, Y Yamamoto, M Lisker, M Virgilio, A Ghrib, ...
Optics express 22 (1), 399-410, 2014
124 2014 Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach G Capellini, G Kozlowski, Y Yamamoto, M Lisker, C Wenger, G Niu, ...
Journal of Applied Physics 113 (1), 2013
118 2013 SiGe BiCMOS technology with 3.0 ps gate delay H Rucker, B Heinemann, R Barth, J Bauer, K Blum, D Bolze, J Drews, ...
2007 IEEE International Electron Devices Meeting, 651-654, 2007
102 2007 Graphene grown on Ge (0 0 1) from atomic source G Lippert, J Dąbrowski, T Schroeder, MA Schubert, Y Yamamoto, ...
Carbon 75, 104-112, 2014
80 2014 CMOS-compatible bias-tunable dual-band detector based on GeSn/Ge/Si coupled photodiodes E Talamas Simola, V Kiyek, A Ballabio, V Schlykow, J Frigerio, ...
ACS photonics 8 (7), 2166-2173, 2021
78 2021 Metal-free CVD graphene synthesis on 200 mm Ge/Si (001) substrates M Lukosius, J Dabrowski, J Kitzmann, O Fursenko, F Akhtar, M Lisker, ...
ACS applied materials & interfaces 8 (49), 33786-33793, 2016
75 2016 Monolithically integrated 25Gbit/sec receiver for 1.55 μm in photonic BiCMOS technology D Knoll, S Lischke, L Zimmermann, B Heinemann, D Micusik, ...
Optical Fiber Communication Conference, Th4C. 4, 2014
59 2014 A complementary BiCMOS technology with high speed npn and pnp SiGe: C HBTs B Heinemann, R Barth, D Bolze, J Drews, P Formanek, O Fursenko, ...
IEEE International Electron Devices Meeting 2003, 5.2. 1-5.2. 4, 2003
57 2003 A flexible, low-cost, high performance SiGe: C BiCMOS process with a one-mask HBT module D Knoll, KE Ehwald, B Heinemann, A Fox, K Blum, H Rucker, ...
Digest. International Electron Devices Meeting,, 783-786, 2002
57 2002 A low-parasitic collector construction for high-speed SiGe: C HBTs B Heinemann, R Barth, D Bolze, J Drews, P Formanek, T Grabolla, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
53 2004 BiCMOS silicon photonics platform L Zimmermann, D Knoll, M Kroh, S Lischke, D Petousi, G Winzer, ...
Optical Fiber Communication Conference, Th4E. 5, 2015
52 2015 Low threading dislocation Ge on Si by combining deposition and etching Y Yamamoto, G Kozlowski, P Zaumseil, B Tillack
Thin Solid Films 520 (8), 3216-3221, 2012
49 2012 SiGe HBT module with 2.5 ps gate delay A Fox, B Heinemann, R Barth, D Bolze, J Drews, U Haak, D Knoll, B Kuck, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
46 2008 Atomic layer processing for doping of SiGe B Tillack, Y Yamamoto, D Bolze, B Heinemann, H Rücker, D Knoll, ...
Thin Solid Films 508 (1-2), 279-283, 2006
42 2006 Molecular beam growth of micrometer-size graphene on mica G Lippert, J Dabrowski, Y Yamamoto, F Herziger, J Maultzsch, ...
Carbon 52, 40-48, 2013
40 2013 
Thomas SchroederLeibniz-Institut für Kristallzüchtung (IKZ); Professor in Physics at Humboldt Universität zu BerlinZweryfikowany adres z ikz-berlin.de
