Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics YG Lee, CG Kang, UJ Jung, JJ Kim, HJ Hwang, HJ Chung, S Seo, R Choi, ...
Applied Physics Letters 98 (18), 183508, 2011
179 2011 Effects of multi-layer graphene capping on Cu interconnects CG Kang, SK Lim, S Lee, SK Lee, C Cho, YG Lee, HJ Hwang, Y Kim, ...
Nanotechnology 24 (11), 115707, 2013
99 2013 Mechanism of the effects of low temperature Al 2 O 3 passivation on graphene field effect transistors CG Kang, YG Lee, SK Lee, E Park, C Cho, SK Lim, HJ Hwang, BH Lee
Carbon 53, 182-187, 2013
71 2013 Quantitative analysis of hysteretic reactions at the interface of graphene and SiO 2 using the short pulse I–V method YG Lee, CG Kang, C Cho, Y Kim, HJ Hwang, BH Lee
Carbon 60, 453-460, 2013
68 2013 Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack W Park, JH Yang, CG Kang, YG Lee, HJ Hwang, C Cho, SK Lim, SC Kang, ...
Nanotechnology 24 (47), 475501, 2013
53 2013 Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask CG Kang, JW Kang, SK Lee, SY Lee, CH Cho, HJ Hwang, YG Lee, J Heo, ...
Nanotechnology 22 (29), 295201, 2011
47 2011 Graphene transfer in vacuum yielding a high quality graphene S Lee, SK Lee, CG Kang, C Cho, YG Lee, U Jung, BH Lee
Carbon 93, 286-294, 2015
44 2015 Ferroelectric polymer-gated graphene memory with high speed conductivity modulation HJ Hwang, JH Yang, YG Lee, C Cho, CG Kang, SC Kang, W Park, ...
Nanotechnology 24 (17), 175202, 2013
43 2013 A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From – , – , and – Measurements A Padovani, B Kaczer, M Pešić, A Belmonte, M Popovici, L Nyns, D Linten, ...
IEEE Transactions on Electron Devices 66 (4), 1892-1898, 2019
42 2019 Intrinsic photocurrent characteristics of graphene photodetectors passivated with Al 2 O 3 CG Kang, SK Lee, S Choe, YG Lee, CL Lee, BH Lee
Optics express 21 (20), 23391-23400, 2013
41 2013 A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistors YJ Kim, YG Lee, U Jung, S Lee, SK Lee, BH Lee
Nanoscale 7 (9), 4013-4019, 2015
33 2015 Electrodeposition of the Sn-58 wt.% Bi layer for low-temperature soldering YG Lee, JG Park, CW Lee, JP Jung
Metals and Materials International 17 (1), 117-121, 2011
32 2011 Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate S Lee, OD Iyore, S Park, YG Lee, S Jandhyala, CG Kang, G Mordi, Y Kim, ...
Carbon 68, 791-797, 2014
29 2014 Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment CG Kang, SK Lee, YG Lee, HJ Hwang, C Cho, SK Lim, J Heo, HJ Chung, ...
Electron Device Letters, IEEE 32 (11), 1591-1593, 2011
28 2011 A study of the leakage current in TiN/HfO 2/TiN capacitors S Cimino, A Padovani, L Larcher, VV Afanas’ev, HJ Hwang, YG Lee, ...
Microelectronic Engineering 95, 71-73, 2012
27 2012 Influence of extrinsic factors on accuracy of mobility extraction in graphene metal-oxide-semiconductor field effect transistors YG Lee, YJ Kim, CG Kang, C Cho, S Lee, HJ Hwang, U Jung, BH Lee
Applied Physics Letters 102 (9), 093121, 2013
24 2013 Correlation of low frequency noise characteristics with the interfacial charge exchange reaction at graphene devices SK Lee, CG Kang, YG Lee, C Cho, E Park, HJ Chung, S Seo, HD Lee, ...
Carbon 50 (11), 4046-4051, 2012
22 2012 Quantitatively estimating defects in graphene devices using discharge current analysis method U Jung, YG Lee, CG Kang, S Lee, JJ Kim, HJ Hwang, SK Lim, MH Ham, ...
Scientific reports 4, 2014
21 2014 Intrinsic Time Zero Dielectric Breakdown Characteristics of HfAlO Alloys JJ Kim, M Kim, U Jung, KE Chang, S Lee, Y Kim, YG Lee, R Choi, BH Lee
Electron Devices, IEEE Transactions on 60 (11), 3683-3689, 2013
20 2013 Process-Dependent N/PBTI Characteristics of TiN Gate FinFETs JJ Kim, M Cho, L Pantisano, U Jung, YG Lee, T Chiarella, M Togo, ...
Electron Device Letters, IEEE 33 (7), 937-939, 2012
19 2012