| Transverse ultra-thin insulated gate bipolar transistor having high current density W Sun, J Zhu, S Xu, Q Qian, S Liu, S Lu, L Shi US Patent 9,240,469, 2016 | 177 | 2016 |
| Repetitive unclamped-inductive-switching-induced electrical parameters degradations and simulation optimizations for 4H-SiC MOSFETs S Liu, C Gu, J Wei, Q Qian, W Sun, AQ Huang IEEE Transactions on Electron Devices 63 (11), 4331-4338, 2016 | 76 | 2016 |
| Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs under Repetitive Avalanche Shocks J Wei, S Liu, S Li, J Fang, T Li, W Sun IEEE Transactions on Power Electronics, 2018 | 59 | 2018 |
| Interfacial damage extraction method for SiC power MOSFETs based on CV characteristics J Wei, S Liu, R Ye, X Chen, H Song, W Sun, W Su, S Ma, Y Liu, F Lin, ... Power Semiconductor Devices and IC's (ISPSD), 2017 29th International …, 2017 | 45 | 2017 |
| A Review on Hot-Carrier-Induced Degradation of Lateral DMOS Transistor S Liu, W Sun, Q Qian, J Wei, J Fang, T Li, C Zhang, L Shi IEEE Transactions on Device and Materials Reliability 18 (2), 298-312, 2018 | 36 | 2018 |
| Repetitive-avalanche-induced electrical parameters shift for 4H-SiC junction barrier Schottky diode S Liu, C Yang, W Sun, Q Qian, Y Huang, X Wu, M Wu, Q Yang, L Sun IEEE Transactions on Electron Devices 62 (2), 601-605, 2015 | 35 | 2015 |
| A novel charge-imbalance termination for trench superjunction VDMOS Q Qian, W Sun, J Zhu, S Liu IEEE Electron Device Letters 31 (12), 1434-1436, 2010 | 30 | 2010 |
| 10kV SiC MPS diodes for high temperature applications Y Jiang, W Sung, X Song, H Ke, S Liu, BJ Baliga, AQ Huang, E Van Brunt Power Semiconductor Devices and ICs (ISPSD), 2016 28th International …, 2016 | 29 | 2016 |
| Design and fabrication of a monolithic optoelectronic integrated Si CMOS LED based on hot-carrier effect K Xu, S Liu, W Sun, Z Ma, Z Li, Q Yu, G Li IEEE Journal of Selected Topics in Quantum Electronics 22 (6), 70-77, 2016 | 24 | 2016 |
| Investigation on degradation mechanism and optimization for SiC power MOSFETs under long-term short-circuit stress J Wei, S Liu, J Fang, S Li, T Li, W Sun 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 18 | 2018 |
| Hot-carrier-induced degradations and optimizations for lateral DMOS transistor with multiple floating poly-gate field plates S Liu, X Ren, Y Fang, W Sun, W Su, S Ma, F Lin, Y Liu, G Sun IEEE Transactions on Electron Devices 64 (8), 3275-3281, 2017 | 18 | 2017 |
| Analysis of simulation of multiterminal electro-optic modulator based on pn junction in reverse bias K Xu, S Liu, J Zhao, W Sun, G Li Optical Engineering 54 (5), 057104, 2015 | 18 | 2015 |
| A Novel Lateral DMOS Transistor With H-Shape Shallow-Trench-Isolation Structure S Liu, R Ye, W Sun, L Shi IEEE Transactions on Electron Devices 65 (11), 5218-5221, 2018 | 17 | 2018 |
| A novel latch-up free SCR-LDMOS for power-rail ESD clamp in half-bridge driver IC SY Liu, WF Sun, HW Pan, H Wang, QS Qian Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th …, 2012 | 17 | 2012 |
| Low-Loss SOI-LIGBT With Triple Deep-Oxide Trenches L Zhang, J Zhu, M Zhao, S Liu, W Sun, L Shi IEEE Transactions on Electron Devices 64 (9), 3756-3761, 2017 | 16 | 2017 |
| Understanding high temperature static and dynamic characteristics of 1.2 kV SiC power MOSFETs S Liu, Y Jiang, W Sung, X Song, BJ Baliga, W Sun, AQ Huang Silicon Carbide & Related Materials (ECSCRM), European Conference on, 1-1, 2016 | 16 | 2016 |
| Hot-carrier-induced on-resistance degradation of n-type lateral DMOS transistor with shallow trench isolation for high-side application W Sun, C Zhang, S Liu, L Shi, W Su, A Zhang, S Wang, S Ma IEEE Transactions on Device and Materials Reliability 15 (3), 458-460, 2015 | 16 | 2015 |
| The investigation of electrothermal characteristics of high-voltage lateral IGBT for ESD protection Q Qian, W Sun, S Wei, S Liu, L Shi IEEE Transactions on Device and Materials Reliability 12 (1), 146-151, 2012 | 16 | 2012 |
| Lateral DMOS with partial-resist-implanted drift region for alleviating hot-carrier effect S Liu, S Li, Z Li, W Sun, W Su, S Ma, F Lin, Y Liu, G Sun IEEE Transactions on Device and Materials Reliability 17 (4), 780-784, 2017 | 15 | 2017 |
| Physics understanding of high temperature behavior of Gallium Nitride power transistor S Wang, F Xue, AQ Huang, S Liu Wide Bandgap Power Devices and Applications (WiPDA), 2016 IEEE 4th Workshop …, 2016 | 15 | 2016 |
Weifeng SUNProfessor,Southeast UniversityE-mail confirmado em seu.edu.cn
