Renato Giacomini

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Rudolf Theoderich BühlerFull Professor and Coordinator of Undergraduate Courses in Computer Science, Information Systems, anEmail confirmado em maua.br
Joao Antonio MartinoUniversity of Sao PauloEmail confirmado em usp.br
Roberto Baginski B. SantosPhysics Department, Centro Universitário FEIEmail confirmado em fei.edu.br
Nilberto H. MedinaProfessor, Universidade de São PauloEmail confirmado em if.usp.br
Luís Eduardo Seixas Júnior (L. E. Seix...CTI, Centro de Tecnologia da Informação Renato ArcherEmail confirmado em cti.gov.br
Cleiton Fidelix PereiraProfessor de Engenharia Elétrica, Centro Universitário FEIEmail confirmado em fei.edu.br
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Vitor AguiarIFUSPEmail confirmado em usp.br
Denis FlandreICTEAM, EPL, Université catholique de Louvain (UCL)Email confirmado em uclouvain.be
Nemitala AddedProfessor Doutor no Depto de Física Nuclear - IF - USPEmail confirmado em if.usp.br
Paula Ghedini Der AgopianSão Paulo State UniversityEmail confirmado em unesp.br
Saulo FincoSenior Technologist Researcher at CTI Renato Archer, a research institute of the Ministry of ScienceEmail confirmado em cti.gov.br
F.R.Palomoprofesor de Ingeniería Electrónica, Escuela Técnica Superior de Ingeniería, Universidad de SevillaEmail confirmado em us.es
Aryan AfzalianUniversité catholique de LouvainEmail confirmado em uclouvain.be
Eduardo Luiz Augusto MacchioneUniversidade de São PauloEmail confirmado em usp.br
Marcelo Antonio PavanelloFull Professor, Department of Electrical Engineering, Centro Universitário da FEIEmail confirmado em fei.edu.br
Fernando Rodrigues AguirreMestrando, Universidade de São PauloEmail confirmado em if.usp.br
Rodrigo T. DoriaCentro Universitário da FEIEmail confirmado em fei.edu.br
C. ClaeysProfessor KU LeuvenEmail confirmado em kuleuven.be

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Renato Giacomini

FEI

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SOI Electronic devices CMOS simulation modeling


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Modeling silicon on insulator MOS transistors with nonrectangular-gate layouts R Giacomini, JA Martino Journal of the Electrochemical Society 153 (3), G218, 2006	39	2006
Trapezoidal cross-sectional influence on FinFET threshold voltage and corner effects R Giacomini, JA Martino Journal of the Electrochemical Society 155 (4), H213, 2008	38	2008
Ionizing radiation hardness tests of GaN HEMTs for harsh environments ACV Bôas, MAA de Melo, RBB Santos, R Giacomini, NH Medina, ... Microelectronics Reliability 116, 114000, 2021	33	2021
Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures C Novo, R Giacomini, R Doria, A Afzalian, D Flandre Semiconductor Science and Technology 29 (7), 075008, 2014	29	2014
Ionizing radiation effects on a COTS low-cost RISC microcontroller FGH Leite, RBB Santos, NH Medina, VAP Aguiar, RC Giacomini, N Added, ... 2017 18th IEEE Latin American Test Symposium (LATS), 1-4, 2017	26	2017
Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape RT Bühler, R Giacomini, MA Pavanello, JA Martino Semiconductor science and technology 24 (11), 115017, 2009	22	2009
Bio-Amplifier based on MOS bipolar Pseudo-Resistors: A New Approach using its non-linear characteristic PL Benko, M Galeti, CF Pereira, JC Lucchi, RC Giacomini Journal of Integrated Circuits and Systems 11 (2), 132-139, 2016	15	2016
Innovative approach for electrical characterisation of pseudo‐resistors PL Benko, M Galeti, CF Pereira, JC Lucchi, R Giacomini Electronics Letters 52 (25), 2031-2032, 2016	13	2016
Transitory recovery time of bio-potential amplifiers that include CMOS pseudo-resistors CF Pereira, PL Benko, JC Lucchi, RC Giacomini 2014 International Caribbean Conference on Devices, Circuits and Systems …, 2014	12	2014
Fin shape influence on the analog performance of standard and strained MuGFETs RT Bühler, JA Martino, PGD Agopian, R Giacomini, E Simoen, C Claeys 2010 IEEE International SOI Conference (SOI), 1-2, 2010	12	2010
Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments ACV Bôas, MAA De Melo, RBB Santos, R Giacomini, NH Medina, ... 2019 19th European Conference on Radiation and Its Effects on Components and …, 2019	10	2019
Teraohm pseudo-resistor experimental characterization aiming at implementation of bio-amplifiers CF Pereira, PL Benko, JC Lucchi, RC Giacomini 2016 31st Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2016	10	2016
Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation C Novo, R Giacomini, A Afzalian, D Flandre ECS Transactions 53 (5), 121, 2013	10	2013
Experimental study and modeling of pseudo-resistor's non-linearity CF Pereira, PL Benko, M Galeti, JC Lucchi, RC Giacomini 2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2017	9	2017
Filter-free color pixel sensor using gated PIN photodiodes and machine learning techniques JB Junior, A Pereira, R Buhler, A Perin, C Novo, M Galeti, J Oliveira, ... Microelectronics Journal 120, 105337, 2022	8	2022
Assessment of ionizing radiation hardness of a GaN field-effect transistor ACV Bôas, MAA de Melo, RBB Santos, RC Giacomini, NH Medina, ... 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2019	8	2019
First successful SEE measurements with heavy ions in Brazil NH Medina, MAG Silveira, N Added, VAP Aguiar, R Giacomini, ... 2014 IEEE Radiation Effects Data Workshop (REDW), 1-3, 2014	8	2014
Sensing magnetic fields in any direction using FinFETs and L-gate FinFETs AL Perin, R Giacomini 2012 IEEE International SOI Conference (SOI), 1-2, 2012	8	2012
An analytical estimation model for the spreading resistance of Double-Gate FinFETs CT Malheiro, ASN Pereira, R Giacomini 2012 8th International Caribbean Conference on Devices, Circuits and Systems …, 2012	8	2012
A Commercial off-the-shelf pMOS Transistor as X-ray and Heavy Ion Detector MAG Silveira, MAA Melo, VAP Aguiar, A Rallo, RBB Santos, NH Medina, ... Journal of Physics: Conference Series 630 (1), 012012, 2015	7	2015

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