Jiyoung Kim

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Robert M. WallaceUniversity of Texas at DallasEmail confirmado em utdallas.edu
Lanxia ChengStaff Engineer_EMD ElectronicsEmail confirmado em emdgroup.com
Luigi ColomboUniversity of Texas at DallasEmail confirmado em utdallas.edu
Si Joon KimAssociate Professor, Kangwon National UniversityEmail confirmado em kangwon.ac.kr
Bongki LeeTechnology Development Engineer, GLOBALFOUNDRIESEmail confirmado em globalfoundries.com
Stephen McDonnellUniversity of VirginiaEmail confirmado em virginia.edu
Jaidah MohanSenior Process Development EngineerEmail confirmado em micron.com
Hyunjung ShinSungkyunkwan UniversityEmail confirmado em skku.edu
Harrison Sejoon KimIntel ATTDEmail confirmado em intel.com
Greg MordiThe University of Texas at DallasEmail confirmado em utdallas.edu
Barry BrennanAtlantic Technological UniversityEmail confirmado em atu.ie
Rafik AddouOregon State UniversityEmail confirmado em oregonstate.edu
Hong DongNankai UniversityEmail confirmado em nankai.edu.cn
Eric M VogelHightower Professor of Materials Science and Engineering, Georgia Institute of TechnologyEmail confirmado em mse.gatech.edu
Jinho AhnProfessor of Materials Science and Engineering, Hanyang UniversityEmail confirmado em hanyang.ac.kr
Myung Mo SungHanyang University, Chemistry DepartmentEmail confirmado em HANYANG.AC.KR
Chadwin D. YoungUniversity of Texas at DallasEmail confirmado em utdallas.edu
Yves Jean ChabalUniversity of Texas at DallasEmail confirmado em utdallas.edu
Srikar JandhyalaEngineering Manager, Intel CorporationEmail confirmado em intel.com
Francisco Servando Aguirre-TostadoCentro de Investigación en Materiales Avanzados, S.C., Unidad MonterreyEmail confirmado em cimav.edu.mx

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Jiyoung Kim

Professor, Department of Materials Science and Engineering, University of Texas at Dallas

Email confirmado em utdallas.edu - Página inicial

Advanced CMOS Atomic Layer Deposition Gate Stack ferroelectrics 2D-Nanomaterials and Heterostructures


Título Ordenar por citações Ordenar por ano Ordenar por título	Citado por Citado por	Ano
GaAs interfacial self-cleaning by atomic layer deposition CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ... Applied Physics Letters 92 (7), 2008	495	2008
Covalent Nitrogen Doping and Compressive Strain in MoS₂ by Remote N₂ Plasma Exposure A Azcatl, X Qin, A Prakash, C Zhang, L Cheng, Q Wang, N Lu, MJ Kim, ... Nano letters 16 (9), 5437-5443, 2016	431	2016
Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics B Lee, SY Park, HC Kim, KJ Cho, EM Vogel, MJ Kim, RM Wallace, J Kim Applied Physics Letters 92 (20), 2008	391	2008
Template-directed synthesis of oxide nanotubes: fabrication, characterization, and applications C Bae, H Yoo, S Kim, K Lee, J Kim, MM Sung, H Shin Chemistry of Materials 20 (3), 756-767, 2008	371	2008
Metal Contacts on Physical Vapor Deposited Monolayer MoS₂ C Gong, C Huang, J Miller, L Cheng, Y Hao, D Cobden, J Kim, RS Ruoff, ... ACS nano 7 (12), 11350-11357, 2013	358	2013
Formation of TiO₂ and ZrO₂ Nanotubes Using Atomic Layer Deposition with Ultraprecise Control of the Wall Thickness H Shin, DK Jeong, J Lee, MM Sung, J Kim Advanced Materials 16 (14), 1197-1200, 2004	350	2004
Large ferroelectric polarization of TiN/Hf0. 5Zr0. 5O2/TiN capacitors due to stress-induced crystallization at low thermal budget SJ Kim, D Narayan, JG Lee, J Mohan, JS Lee, J Lee, HS Kim, YC Byun, ... Applied Physics Letters 111 (24), 2017	333	2017
HfO₂ on MoS₂ by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability S McDonnell, B Brennan, A Azcatl, N Lu, H Dong, C Buie, J Kim, ... ACS nano 7 (11), 10354-10361, 2013	332	2013
Ferroelectric thin Hf0.5Zr05O2 films: a review of recent advance SJ Kim, J Mohan, SR Summerfelt, J Kim JOM 71 (1), 246, 2019	319*	2019
Large-Area Deposition of MoS2 by pulsed laser deposition with in situ thickness control MI Serna, SH Yoo, S Moreno, Y Xi, JP Oviedo, H Choi, HN Alshareef, ... ACS Nano 10 (6), 6054-6061, 2016	264	2016
HfSe₂ Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy R Yue, AT Barton, H Zhu, A Azcatl, LF Pena, J Wang, X Peng, N Lu, ... ACS nano 9 (1), 474-480, 2015	260	2015
MoS2 functionalization for ultra-thin atomic layer deposited dielectrics A Azcatl, S McDonnell, S KC, X Peng, H Dong, X Qin, R Addou, GI Mordi, ... Applied Physics Letters 104 (11), 2014	240	2014
Ozone adsorption on graphene: ab initio study and experimental validation G Lee, B Lee, J Kim, K Cho The Journal of Physical Chemistry C 113 (32), 14225-14229, 2009	222	2009
Half-cycle atomic layer deposition reaction studies of on (100) surfaces M Milojevic, FS Aguirre-Tostado, CL Hinkle, HC Kim, EM Vogel, J Kim, ... Applied Physics Letters 93 (20), 202902, 2008	195	2008
Remote Plasma Oxidation and Atomic Layer Etching of MoS₂ H Zhu, X Qin, L Cheng, A Azcatl, J Kim, RM Wallace ACS Applied Materials & Interfaces 8 (29), 19119-19126, 2016	193	2016
Schottky barrier height engineering for electrical contacts of multilayered MoS2 transistors with reduction of metal induced gate states GS Kim, SH Kim, J Park, K Han, J Kim, HY Yu ACS Nano 12 (6), 6292, 2018	184	2018
Comparison of the sputter rates of oxide films relative to the sputter rate of SiO2 DR Baer, MH Engelhard, AS Lea, P Nachimuthu, TC Droubay, J Kim, ... Journal of Vacuum Science & Technology A 28 (5), 1060-1072, 2010	163	2010
Defects and Surface Structural Stability of MoTe₂ Under Vacuum Annealing H Zhu, Q Wang, L Cheng, R Addou, J Kim, MJ Kim, RM Wallace Acs Nano 11 (11), 11005-11014, 2017	161	2017
Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone S Jandhyala, G Mordi, B Lee, G Lee, C Floresca, PR Cha, J Ahn, ... ACS nano 6 (3), 2722-2730, 2012	161	2012
Effect of film thickness on the ferroelectric and dielectric properties of low temperature (400C) Hf0.5Zr0.5O2 films SJ Kim, J Mohan, J Lee, JS Lee, AT Lucero, L Colombo, SR Summerfelt, ... applied physics letters 112 (17), 172902, 2018	156	2018

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