van der Waals epitaxy: 2D materials and topological insulators CLH Lee A. Walsh
Applied Materials Today 9, 504-515, 2017
219 2017 Nucleation and growth of WSe2: enabling large grain transition metal dichalcogenides R Yue, Y Nie, LA Walsh, R Addou, C Liang, N Lu, AT Barton, H Zhu, ...
2D Materials 4 (4), 045019, 2017
154 2017 Interface Chemistry of Contact Metals and Ferromagnets on the Topological Insulator Bi2 Se3 LA Walsh, CM Smyth, AT Barton, Q Wang, Z Che, R Yue, J Kim, MJ Kim, ...
The Journal of Physical Chemistry C 121 (42), 23551-23563, 2017
107 2017 W Te2 thin films grown by beam-interrupted molecular beam epitaxy LA Walsh, R Yue, Q Wang, AT Barton, R Addou, CM Smyth, H Zhu, J Kim, ...
2D Materials 4 (2), 025044, 2017
58 2017 Spin coating of hydrophilic polymeric films for enhanced centrifugal flow control by serial siphoning M Kitsara, CE Nwankire, L Walsh, G Hughes, M Somers, D Kurzbuch, ...
Microfluidics and nanofluidics 16, 691-699, 2014
55 2014 Fermi Level Manipulation through Native Doping in the Topological Insulator Bi2 Se3 LA Walsh, AJ Green, R Addou, W Nolting, CR Cormier, AT Barton, ...
ACS nano 12 (6), 6310-6318, 2018
54 2018 Molecular Beam Epitaxy of Transition Metal Dichalcogenides LA Walsh, R Addou, RM Wallace, CL Hinkle
Molecular Beam Epitaxy: From Research to Mass Production, 515-531, 2018
51 2018 Engineering the Palladium–WSe2 Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts CM Smyth, LA Walsh, P Bolshakov, M Catalano, R Addou, L Wang, J Kim, ...
ACS Applied Nano Materials 2 (1), 75-88, 2018
41 2018 Dislocation driven spiral and non-spiral growth in layered chalcogenides: morphology, mechanism, and mitigation Y Nie, A Barton, R Addou, Y Zheng, L Walsh, S Eichfeld, R Yue, ...
Nanoscale, 2018
41 2018 WSe (2− x) Tex alloys grown by molecular beam epitaxy AT Barton, R Yue, LA Walsh, G Zhou, C Cormier, CM Smyth, R Addou, ...
2D Materials 6 (4), 045027, 2019
25 2019 Large-area growth of MoS2 at temperatures compatible with integrating back-end-of-line functionality J Lin, S Monaghan, N Sakhuja, F Gity, RK Jha, EM Coleman, J Connolly, ...
2D Materials 8 (2), 025008, 2020
23 2020 A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si (100) metal-oxide-semiconductor structures LA Walsh, G Hughes, PK Hurley, J Lin, JC Woicik
Applied Physics Letters 101 (24), 2012
21 2012 Oxide-related defects in quantum dot containing Si-rich silicon nitride films LA Walsh, S Mohammed, SC Sampat, YJ Chabal, AV Malko, CL Hinkle
Thin Solid Films 636, 267-272, 2017
17 2017 Engineering the interface chemistry for scandium electron contacts in WSe2 transistors and diodes CM Smyth, LA Walsh, P Bolshakov, M Catalano, M Schmidt, B Sheehan, ...
2D Materials 6 (4), 045020, 2019
16 2019 Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation G Mirabelli, LA Walsh, F Gity, S Bhattacharjee, CP Cullen, C Ó Coileáin, ...
ACS omega 4 (17), 17487-17493, 2019
13 2019 Molecular Beam Epitaxy LA Walsh, R Addou, RM Wallace, CL Hinkle, M Henini
Elsevier, 2018
13 2018 In-situ surface and interface study of atomic oxygen modified carbon containing porous low-κ dielectric films for barrier layer applications J Bogan, R Lundy, A P McCoy, R O'Connor, C Byrne, L Walsh, P Casey, ...
Journal of Applied Physics 120 (10), 2016
13 2016 Ni-(In, Ga) As alloy formation investigated by hard-X-ray photoelectron spectroscopy and X-ray absorption spectroscopy LA Walsh, G Hughes, C Weiland, JC Woicik, RTP Lee, WY Loh, P Lysaght, ...
Physical Review Applied 2 (6), 064010, 2014
13 2014 Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/Al O /GaAs(100) metal-oxide-semiconductor structures LA Walsh, G Hughes, J Lin, PK Hurley, TP O’Regan, E Cockayne, ...
Physical Review B—Condensed Matter and Materials Physics 88 (4), 045322, 2013
13 2013 Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2 Se3 AT Barton, LA Walsh, CM Smyth, X Qin, R Addou, C Cormier, PK Hurley, ...
ACS applied materials & interfaces 11 (35), 32144-32150, 2019
10 2019