| Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors AJ Arnold, A Razavieh, JR Nasr, DS Schulman, CM Eichfeld, S Das ACS nano 11 (3), 3110-3118, 2017 | 282 | 2017 |
| 14nm ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications Z Krivokapic, U Rana, R Galatage, A Razavieh, A Aziz, J Liu, J Shi, ... 2017 IEEE International Electron Devices Meeting (IEDM), 15.1. 1-15.1. 4, 2017 | 262 | 2017 |
| Challenges and limitations of CMOS scaling for FinFET and beyond architectures A Razavieh, P Zeitzoff, EJ Nowak IEEE Transactions on Nanotechnology 18, 999-1004, 2019 | 243 | 2019 |
| Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs S Dasgupta, A Rajashekhar, K Majumdar, N Agrawal, A Razavieh, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015 | 154 | 2015 |
| Channel geometry impact and narrow sheet effect of stacked nanosheet CW Yeung, J Zhang, R Chao, O Kwon, R Vega, G Tsutsui, X Miao, ... 2018 IEEE international electron devices meeting (IEDM), 28.6. 1-28.6. 4, 2018 | 94 | 2018 |
| Complementary FETs with wrap around contacts and method of forming same J Frougier, R Xie, PH Suvarna, H Niimi, SJ Bentley, A Razavieh US Patent 10,192,867, 2019 | 63 | 2019 |
| Methods of forming a nano-sheet transistor device with a thicker gate stack and the resulting device J Frougier, A Razavieh, R Xie, S Bentley US Patent 9,991,352, 2018 | 47 | 2018 |
| The prospect of two-dimensional heterostructures: a review of recent breakthroughs DS Schulman, AJ Arnold, A Razavieh, J Nasr, S Das IEEE Nanotechnology Magazine 11 (2), 6-17, 2017 | 37 | 2017 |
| Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors A Razavieh, PK Mohseni, K Jung, S Mehrotra, S Das, S Suslov, X Li, ... ACS nano 8 (6), 6281-6287, 2014 | 33 | 2014 |
| Scaling challenges of FinFET architecture below 40nm contacted gate pitch A Razavieh, P Zeitzoff, DE Brown, G Karve, EJ Nowak 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 23 | 2017 |
| Effective drive current in scaled FinFET and NSFET CMOS inverters A Razavieh, Y Deng, P Zeitzoff, MR Na, J Frougier, G Karve, DE Brown, ... 2018 76th Device Research Conference (DRC), 1-2, 2018 | 21 | 2018 |
| Complementary FETs with wrap around contacts and methods of forming same J Frougier, R Xie, PH Suvarna, H Niimi, SJ Bentley, A Razavieh US Patent 10,236,292, 2019 | 17 | 2019 |
| FinFET with contact over active-gate for 5G ultra-wideband applications A Razavieh, V Mahajan, WL Oo, S Cimino, SV Khokale, K Nagahiro, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 15 | 2020 |
| Utilizing the unique properties of nanowire MOSFETs for RF applications A Razavieh, S Mehrotra, N Singh, G Klimeck, D Janes, J Appenzeller Nano letters 13 (4), 1549-1554, 2013 | 15 | 2013 |
| Transconductance linearity analysis of 1-D, nanowire FETs in the quantum capacitance limit A Razavieh, DB Janes, J Appenzeller IEEE transactions on electron devices 60 (6), 2071-2076, 2013 | 12 | 2013 |
| Negative-capacitance steep-switch field effect transistor with integrated bi-stable resistive system J Frougier, N Loubet, R Xie, D Chanemougame, A Razavieh, K Cheng US Patent 10,170,520, 2019 | 11 | 2019 |
| Extremely-low threshold voltage FinFET for 5G mmWave applications A Razavieh, Y Chen, T Ethirajan, M Gu, S Cimino, T Shimizu, MK Hassan, ... IEEE Journal of the Electron Devices Society 9, 165-169, 2020 | 10 | 2020 |
| A new method to achieve RF linearity in SOI nanowire MOSFETs A Razavieh, N Singh, A Paul, G Klimeck, D Janes, J Appenzeller 2011 IEEE Radio Frequency Integrated Circuits Symposium, 1-4, 2011 | 10 | 2011 |
| Steep-switch field effect transistor with integrated bi-stable resistive system J Frougier, N Loubet, R Xie, D Chanemougame, A Razavieh, K Cheng US Patent 10,256,316, 2019 | 4 | 2019 |
| Titanium dioxide nanowire sensor array integration on CMOS platform using deterministic assembly OZ Gall, X Zhong, DS Schulman, M Kang, A Razavieh, TS Mayer Nanotechnology 28 (26), 265501, 2017 | 4 | 2017 |
