Ion-beam-induced amorphization and recrystallization in silicon L Pelaz, LA Marqués, J Barbolla
Journal of applied physics 96 (11), 5947-5976, 2004
473 2004 B diffusion and clustering in ion implanted Si: The role of B cluster precursors L Pelaz, M Jaraiz, GH Gilmer, HJ Gossmann, CS Rafferty, DJ Eaglesham, ...
Applied physics letters 70 (17), 2285-2287, 1997
282 1997 B cluster formation and dissolution in Si: A scenario based on atomistic modeling L Pelaz, GH Gilmer, HJ Gossmann, CS Rafferty, M Jaraiz, J Barbolla
Applied physics letters 74 (24), 3657-3659, 1999
218 1999 Stability of defects in crystalline silicon and their role in amorphization LA Marqués, L Pelaz, J Hernández, J Barbolla, GH Gilmer
Physical Review B 64 (4), 045214, 2001
163 2001 Reduction of transient diffusion from 1–5 keV A Agarwal, HJ Gossmann, DJ Eaglesham, L Pelaz, DC Jacobson, ...
Applied physics letters 71 (21), 3141-3143, 1997
114 1997 Boron-enhanced diffusion of boron from ultralow-energy ion implantation A Agarwal, HJ Gossmann, DJ Eaglesham, SB Herner, AT Fiory, ...
Applied physics letters 74 (17), 2435-2437, 1999
104 1999 Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial LA Marqués, L Pelaz, P Castrillo, J Barbolla
Physical Review B—Condensed Matter and Materials Physics 71 (8), 085204, 2005
100 2005 Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon VC Venezia, TE Haynes, A Agarwal, L Pelaz, HJ Gossmann, ...
Applied physics letters 74 (9), 1299-1301, 1999
98 1999 Atomistic modeling of point and extended defects in crystalline materials M Jaraiz, L Pelaz, E Rubio, J Barbolla, GH Gilmer, DJ Eaglesham, ...
MRS Online Proceedings Library (OPL) 532, 43, 1998
92 1998 Atomistic modeling of amorphization and recrystallization in silicon L Pelaz, LA Marqués, M Aboy, J Barbolla, GH Gilmer
Applied physics letters 82 (13), 2038-2040, 2003
90 2003 Microscopic description of the irradiation-induced amorphization in silicon LA Marqués, L Pelaz, M Aboy, L Enríquez, J Barbolla
Physical review letters 91 (13), 135504, 2003
86 2003 Activation and deactivation of implanted B in Si L Pelaz, VC Venezia, HJ Gossmann, GH Gilmer, AT Fiory, CS Rafferty, ...
Applied physics letters 75 (5), 662-664, 1999
82 1999 Modeling of the ion mass effect on transient enhanced diffusion: Deviation from the “+ 1” model L Pelaz, GH Gilmer, M Jaraiz, SB Herner, HJ Gossmann, DJ Eaglesham, ...
Applied physics letters 73 (10), 1421-1423, 1998
76 1998 Boron diffusion in amorphous silicon and the role of fluorine R Duffy, VC Venezia, A Heringa, BJ Pawlak, MJP Hopstaken, GCJ Maas, ...
Applied physics letters 84 (21), 4283-4285, 2004
60 2004 Modeling of damage generation mechanisms in silicon at energies below the displacement threshold I Santos, LA Marqués, L Pelaz
Physical Review B—Condensed Matter and Materials Physics 74 (17), 174115, 2006
58 2006 Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion L Pelaz, GH Gilmer, VC Venezia, HJ Gossmann, M Jaraiz, J Barbolla
Applied physics letters 74 (14), 2017-2019, 1999
57 1999 Damage, defects and diffusion from ultra-low energy (0–5 keV) ion implantation of silicon A Agarwal, HJ Gossmann, DJ Eaglesham, L Pelaz, SB Herner, ...
Materials Science in Semiconductor Processing 1 (1), 17-25, 1998
50 1998 Front-end process modeling in silicon L Pelaz, LA Marqués, M Aboy, P López, I Santos
The European Physical Journal B 72, 323-359, 2009
49 2009 Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles M Aboy, L Pelaz, LA Marqués, J Barbolla, A Mokhberi, Y Takamura, ...
Applied physics letters 83 (20), 4166-4168, 2003
45 2003 Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions A Agarwal, DJ Eaglesham, HJ Gossmann, L Pelaz, SB Herner, ...
International Electron Devices Meeting. IEDM Technical Digest, 467-470, 1997
45 1997 