Two-dimensional Janus PtSSe for photocatalytic water splitting under the visible or infrared light R Peng, Y Ma, B Huang, Y Dai
Journal of materials chemistry A 7 (2), 603-610, 2019
343 2019 Valley polarization in Janus single-layer MoSSe via magnetic doping R Peng, Y Ma, S Zhang, B Huang, Y Dai
The journal of physical chemistry letters 9 (13), 3612-3617, 2018
235 2018 Single-Layer Ag2 S: A Two-Dimensional Bidirectional Auxetic Semiconductor R Peng, Y Ma, Z He, B Huang, L Kou, Y Dai
Nano Letters 19 (2), 1227-1233, 2019
199 2019 Intrinsic anomalous valley Hall effect in single-layer R Peng, Y Ma, X Xu, Z He, B Huang, Y Dai
Physical Review B 102 (3), 035412, 2020
169 2020 Valley-related multiple Hall effect in monolayer X Feng, X Xu, Z He, R Peng, Y Dai, B Huang, Y Ma
Physical Review B 104 (7), 075421, 2021
119 2021 Electron Spin Polarization-Enhanced Photoinduced Charge Separation in Ferromagnetic ZnFe2 O4 W Gao, R Peng, Y Yang, X Zhao, C Cui, X Su, W Qin, Y Dai, Y Ma, H Liu, ...
ACS Energy Letters 6 (6), 2129-2137, 2021
96 2021 Large valley-polarized state in single-layer NbX2 (X = S, Se): Theoretical prediction Y Zang, Y Ma, R Peng, H Wang, B Huang, Y Dai
Nano Research 14, 834-839, 2021
81 2021 Ultrahigh hole mobility of Sn-catalyzed GaSb nanowires for high speed infrared photodetectors J Sun, M Peng, Y Zhang, L Zhang, R Peng, C Miao, D Liu, M Han, R Feng, ...
Nano letters 19 (9), 5920-5929, 2019
70 2019 Two-dimensional valleytronic semiconductor with spontaneous spin and valley polarization in single-layer Z He, R Peng, X Feng, X Xu, Y Dai, B Huang, Y Ma
Physical Review B 104 (7), 075105, 2021
63 2021 Two-dimensional materials with intrinsic auxeticity: progress and perspectives R Peng, Y Ma, Q Wu, B Huang, Y Dai
Nanoscale 11 (24), 11413-11428, 2019
61 2019 MoSSe nanotube: a promising photocatalyst with an extremely long carrier lifetime S Zhang, H Jin, C Long, T Wang, R Peng, B Huang, Y Dai
Journal of Materials Chemistry A 7 (13), 7885-7890, 2019
60 2019 Prediction of single-layer TiVI 6 as a promising two-dimensional valleytronic semiconductor with spontaneous valley polarization W Du, Y Ma, R Peng, H Wang, B Huang, Y Dai
Journal of Materials Chemistry C 8 (38), 13220-13225, 2020
57 2020 Valley-Contrasting Physics in Single-Layer CrSi2 N4 and CrSi2 P4 Y Liu, T Zhang, K Dou, W Du, R Peng, Y Dai, B Huang, Y Ma
The Journal of Physical Chemistry Letters 12 (34), 8341-8346, 2021
52 2021 Anomalous valley Hall effect in antiferromagnetic monolayers W Du, R Peng, Z He, Y Dai, B Huang, Y Ma
npj 2D Materials and Applications 6 (1), 11, 2022
49 2022 Self-doped p–n junctions in two-dimensional In 2 X 3 van der Waals materials R Peng, Y Ma, S Zhang, B Huang, L Kou, Y Dai
Materials Horizons 7 (2), 504-510, 2020
49 2020 Electrical 180 switching of Néel vector in spin-splitting antiferromagnet L Han, X Fu, R Peng, X Cheng, J Dai, L Liu, Y Li, Y Zhang, W Zhu, H Bai, ...
Science Advances 10 (4), eadn0479, 2024
46 2024 Intrinsic layer-polarized anomalous Hall effect in bilayer R Peng, T Zhang, Z He, Q Wu, Y Dai, B Huang, Y Ma
Physical Review B 107 (8), 085411, 2023
41 2023 Single-layer ScI2: A paradigm for valley-related multiple Hall effect Z He, R Peng, Y Dai, B Huang, Y Ma
Applied Physics Letters 119 (24), 2021
28 2021 Stacking-dependent topological phase in bilayer R Peng, Y Ma, H Wang, B Huang, Y Dai
Physical Review B 101 (11), 115427, 2020
28 2020 Valley-dependent properties in two-dimensional X Feng, Z He, R Peng, Y Dai, B Huang, Y Ma
Physical Review Materials 6 (4), 044001, 2022
23 2022