Andreas Waag

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Dmitri R. YakovlevTU Dortmund University, GermanyAdresă de e-mail confirmată pe tu-dortmund.de
Andrey BakinProf. Dr., Technische Universität BraunschweigAdresă de e-mail confirmată pe tu-bs.de
Hutomo Suryo WasistoInfineon Technologies AGAdresă de e-mail confirmată pe infineon.com
Erwin PeinerProfessor of Semiconductor Technology, TU Braunschweig University of TechnologyAdresă de e-mail confirmată pe tu-bs.de
Dr. Günter ReuscherVDI Technologiezentrum GmbHAdresă de e-mail confirmată pe vdi.de
Joan Daniel PradesTU BraunschweigAdresă de e-mail confirmată pe tu-braunschweig.de
Laurens W MolenkampPhysics Institute (EP3) and Institute for Topological Insulators, Würzburg UniversityAdresă de e-mail confirmată pe physik.uni-wuerzburg.de
Abdelhamid El-ShaerKafrelsheikh University, Faculty of Science, Physics Department.Adresă de e-mail confirmată pe sci.kfs.edu.eg
Andrej StranzResearcher, Fraunhofer IZM BerlinAdresă de e-mail confirmată pe izm.fraunhofer.de
KochereshkoIoffe InstituteAdresă de e-mail confirmată pe mail.ioffe.ru
Sergey IvanovDirector, Ioffe InstituteAdresă de e-mail confirmată pe beam.ioffe.ru
Tatiana V. ShubinaChief researcher, Ioffe Institute of RASAdresă de e-mail confirmată pe beam.ioffe.ru
Axel HoffmannInstitute of Solid State Physics, Technical University of BerlinAdresă de e-mail confirmată pe tu-berlin.de
Ernst Göbelemeritus president of PTBAdresă de e-mail confirmată pe ptb.de
Ralf HellmannProfessor der Physik, Lasertechnik, Photonik, University Applied Science AschaffenburgAdresă de e-mail confirmată pe th-ab.de
Tunga SalthammerFraunhofer WKIAdresă de e-mail confirmată pe wki.fraunhofer.de
Olga Casals GuillénMIND - Department of Electronics and Biomedical EngineeringAdresă de e-mail confirmată pe ub.edu
Georg SchmidtProfessor der Physik, Universität HalleAdresă de e-mail confirmată pe physik.uni-halle.de
Alexei V. PlatonovФТИ им. А.Ф.ИоффеAdresă de e-mail confirmată pe mail.ioffe.ru
Tobias VossTechnische Universität BraunschweigAdresă de e-mail confirmată pe tu-braunschweig.de

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Andreas Waag

Technische Universität Braunschweig

Adresă de e-mail confirmată pe tu-braunschweig.de - Pagina de pornire

Semiconductor Technology Quantum Technology Optoelectronics Gallium Nitride Photonic Integration


Titlu Sortați după descrierea bibliografică Sortați după an Sortați după titlu	Citat de Citat de	Anul
Injection and detection of a spin-polarized current in a light-emitting diode R Fiederling, M Keim, G Reuscher, W Ossau, G Schmidt, A Waag, ... Nature 402 (6763), 787-790, 1999	2528	1999
Zinc oxide: from fundamental properties towards novel applications CF Klingshirn, A Waag, A Hoffmann, J Geurts Springer Science & Business Media, 2010	787	2010
Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodesand lasers M Willander, O Nur, QX Zhao, LL Yang, M Lorenz, BQ Cao, JZ Pérez, ... Nanotechnology 20 (33), 332001, 2009	772	2009
Characterisation of 3D‐GaN/InGaN core‐shell nanostructures by transmission electron microscopy I Griffiths, D Cherns, X Wang, HH Wehman, M Mandl, M Strassburg, ... physica status solidi (c) 11 (3‐4), 425-427, 2014	767	2014
GaN based nanorods for solid state lighting S Li, A Waag Journal of Applied Physics 111 (7), 2012	612	2012
ZnMgO epilayers and ZnO–ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region T Gruber, C Kirchner, R Kling, F Reuss, A Waag Applied physics letters 84 (26), 5359-5361, 2004	360	2004
Donor–acceptor pair transitions in ZnO substrate material K Thonke, T Gruber, N Teofilov, R Schönfelder, A Waag, R Sauer Physica B: Condensed Matter 308, 945-948, 2001	357	2001
Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano-and micro-LEDs HS Wasisto, JD Prades, J Gülink, A Waag Applied Physics Reviews 6 (4), 2019	275	2019
Molecular‐beam epitaxy of beryllium‐chalcogenide‐based thin films and quantum‐well structures A Waag, F Fischer, HJ Lugauer, T Litz, J Laubender, U Lunz, U Zehnder, ... Journal of Applied Physics 80 (2), 792-796, 1996	262	1996
Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy T Gruber, C Kirchner, R Kling, F Reuss, A Waag, F Bertram, D Forster, ... Applied Physics Letters 83 (16), 3290-3292, 2003	224	2003
Electron and hole g factors measured by spin-flip Raman scattering in CdTe/Cd 1− x Mg x Te single quantum wells AA Sirenko, T Ruf, M Cardona, DR Yakovlev, W Ossau, A Waag, ... Physical Review B 56 (4), 2114, 1997	209	1997
Epitaxial growth and optical transitions of cubic GaN films D Schikora, M Hankeln, DJ As, K Lischka, T Litz, A Waag, T Buhrow, ... Physical Review B 54 (12), R8381, 1996	189	1996
Localized exciton magnetic polarons in Cd 1− x Mn x Te G Mackh, W Ossau, DR Yakovlev, A Waag, G Landwehr, R Hellmann, ... Physical Review B 49 (15), 10248, 1994	189	1994
Airborne engineered nanoparticle mass sensor based on a silicon resonant cantilever HS Wasisto, S Merzsch, A Waag, E Uhde, T Salthammer, E Peiner Sensors and Actuators B: Chemical 180, 77-89, 2013	187	2013
Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods andembedded InGaN quantum wells W Bergbauer, M Strassburg, C Kölper, N Linder, C Roder, J Lähnemann, ... Nanotechnology 21 (30), 305201, 2010	185	2010
Growth of MgTe and Cd1− xMgxTe thin films by molecular beam epitaxy A Waag, H Heinke, S Scholl, CR Becker, G Landwehr Journal of crystal growth 131 (3-4), 607-611, 1993	171	1993
Laser diodes based on beryllium-chalcogenides A Waag, F Fischer, K Schüll, T Baron, HJ Lugauer, T Litz, U Zehnder, ... Applied physics letters 70 (3), 280-282, 1997	169	1997
The nanorod approach: GaN NanoLEDs for solid state lighting A Waag, X Wang, S Fündling, J Ledig, M Erenburg, R Neumann, ... physica status solidi c 8 (7‐8), 2296-2301, 2011	166	2011
Kinetic exchange between the conduction band electrons and magnetic ions in quantum-confined structures IA Merkulov, DR Yakovlev, A Keller, W Ossau, J Geurts, A Waag, ... Physical Review Letters 83 (7), 1431, 1999	157	1999
Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires T Voss, C Bekeny, L Wischmeier, H Gafsi, S Börner, W Schade, AC Mofor, ... Applied Physics Letters 89 (18), 2006	155	2006

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