Size effects in mechanical deformation and fracture of cantilevered silicon nanowires MJ Gordon, T Baron, F Dhalluin, P Gentile, P Ferret
Nano letters 9 (2), 525-529, 2009
226 2009 Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices B De Salvo, G Ghibaudo, G Pananakakis, P Masson, T Baron, N Buffet, ...
IEEE Transactions on Electron Devices 48 (8), 1789-1799, 2001
175 2001 Laser diodes based on beryllium-chalcogenides A Waag, F Fischer, K Schüll, T Baron, HJ Lugauer, T Litz, U Zehnder, ...
Applied physics letters 70 (3), 280-282, 1997
169 1997 Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p -type nonvolatile memory applications M Kanoun, A Souifi, T Baron, F Mazen
Applied Physics Letters 84 (25), 5079-5081, 2004
159 2004 Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales C Sire, S Blonkowski, MJ Gordon, T Baron
Applied Physics Letters 91 (24), 2007
151 2007 Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si (001) substrate by metalorganic chemical vapour deposition with high mobility R Alcotte, M Martin, J Moeyaert, R Cipro, S David, F Bassani, F Ducroquet, ...
Apl Materials 4 (4), 2016
147 2016 Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates S Chen, M Liao, M Tang, J Wu, M Martin, T Baron, A Seeds, H Liu
Optics express 25 (5), 4632-4639, 2017
145 2017 Control of gold surface diffusion on Si nanowires MI den Hertog, JL Rouviere, F Dhalluin, PJ Desré, P Gentile, P Ferret, ...
Nano letters 8 (5), 1544-1550, 2008
138 2008 Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS) B De Salvo, C Gerardi, R van Schaijk, SA Lombardo, D Corso, ...
IEEE Transactions on Device and Materials Reliability 4 (3), 377-389, 2004
137 2004 Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices T Baron, F Martin, P Mur, C Wyon, M Dupuy
Journal of crystal growth 209 (4), 1004-1008, 2000
137 2000 Chemical vapor deposition of Ge nanocrystals on T Baron, B Pelissier, L Perniola, F Mazen, JM Hartmann, G Rolland
Applied Physics Letters 83 (7), 1444-1446, 2003
132 2003 Massless Dirac Fermions in ZrTe2 Semimetal Grown on InAs(111) by van der Waals Epitaxy P Tsipas, D Tsoutsou, S Fragkos, R Sant, C Alvarez, H Okuno, G Renaud, ...
ACS nano 12 (2), 1696-1703, 2018
120 2018 Single-electron charging effect in individual Si nanocrystals T Baron, P Gentile, N Magnea, P Mur
Applied physics letters 79 (8), 1175-1177, 2001
119 2001 How far will silicon nanocrystals push the scaling limits of NVMs technologies? B De Salvo, C Gerardi, S Lombardo, T Baron, L Perniola, D Mariolle, ...
IEEE International Electron Devices Meeting 2003, 26.1. 1-26.1. 4, 2003
116 2003 Novel beryllium containing II–VI compounds: basic properties and potential applications A Waag, T Litz, F Fischer, HJ Lugauer, T Baron, K Schüll, U Zehnder, ...
Journal of crystal growth 184, 1-10, 1998
114 1998 Silicon nanocrystal memories S Lombardo, B De Salvo, C Gerardi, T Baron
Microelectronic Engineering 72 (1-4), 388-394, 2004
112 2004 Toward a reliable chipless RFID humidity sensor tag based on silicon nanowires A Vena, E Perret, D Kaddour, T Baron
IEEE Transactions on Microwave Theory and Techniques 64 (9), 2977-2985, 2016
110 2016 Atomic force microscopy nanomanipulation of silicon nanocrystals for nanodevicefabrication S Decossas, F Mazen, T Baron, G Brémond, A Souifi
Nanotechnology 14 (12), 1272, 2003
108 2003 Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001) T Zhou, M Tang, G Xiang, B Xiang, S Hark, M Martin, T Baron, S Pan, ...
Nature communications 11 (1), 977, 2020
104 2020 Nitrogen doping of Te-based II–VI compounds during growth by molecular beam epitaxy T Baron, K Saminadayar, N Magnea
Journal of applied physics 83 (3), 1354-1370, 1998
100 1998 
Pascal GentileceaAdresă de e-mail confirmată pe cea.fr