Indirect-to-direct band gap transition in relaxed and strained Ge1−x−y Six Sny ternary alloys A Attiaoui, O Moutanabbir
Journal of Applied Physics 116 (6), 063712, 2014
90 2014 All‐Group IV Transferable Membrane Mid‐Infrared Photodetectors MRM Atalla, S Assali, A Attiaoui, C Lemieux‐Leduc, A Kumar, S Abdi, ...
Advanced Functional Materials 31 (3), 2006329, 2021
84 2021 High-bandwidth extended-SWIR GeSn photodetectors on silicon achieving ultrafast broadband spectroscopic response MRM Atalla, S Assali, S Koelling, A Attiaoui, O Moutanabbir
ACS Photonics 9 (4), 1425-1433, 2022
70 2022 Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering T Grange, S Mukherjee, G Capellini, M Montanari, L Persichetti, ...
Physical Review Applied 13 (4), 044062, 2020
41 2020 Dark current in monolithic extended-SWIR GeSn PIN photodetectors MRM Atalla, S Assali, S Koelling, A Attiaoui, O Moutanabbir
Applied Physics Letters 122 (3), 2023
25 2023 Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap S Assali, A Dijkstra, A Attiaoui, É Bouthillier, JEM Haverkort, ...
Physical Review Applied 15 (2), 024031, 2021
22 2021 Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires L Luo, S Assali, MRM Atalla, S Koelling, A Attiaoui, G Daligou, S Martí, ...
ACS Photonics 9 (3), 914-921, 2022
17 2022 Polarization‐Tuned Fano Resonances in All‐Dielectric Short‐Wave Infrared Metasurface A Attiaoui, G Daligou, S Assali, O Skibitzki, T Schroeder, O Moutanabbir
Advanced Materials, 2300595, 2023
12 2023 Group IV Mid-Infrared Thermophotovoltaic Cells on Silicon G Daligou, R Soref, A Attiaoui, J Hossain, MRM Atalla, P Del Vecchio, ...
IEEE Journal of Photovoltaics, 2023
11 2023 3D Atomic Mapping of Interfacial Roughness and Its Spatial Correlation Length in Sub-10 nm Superlattices S Mukherjee, A Attiaoui, M Bauer, O Moutanabbir
ACS Applied Materials & Interfaces 12 (1), 1728-1736, 2019
11 2019 A Light‐Hole Germanium Quantum Well on Silicon S Assali, A Attiaoui, PD Vecchio, S Mukherjee, J Nicolas, O Moutanabbir
Advanced Materials 34 (27), 2201192, 2022
10 2022 Extended Short-Wave Infrared Absorption in Group-IV Nanowire Arrays A Attiaoui, É Bouthillier, G Daligou, A Kumar, S Assali, O Moutanabbir
Physical Review Applied 15 (1), 014034, 2021
10 2021 Extreme IR absorption in group IV-SiGeSn core-shell nanowires A Attiaoui, S Wirth, AP Blanchard-Dionne, M Meunier, JM Hartmann, ...
Journal of Applied Physics 123 (22), 223102, 2018
10 2018 Continuous-wave GeSn light emitting diodes on silicon with MRM Atalla, S Assali, G Daligou, A Attiaoui, S Koelling, P Daoust, ...
arXiv preprint arXiv:2310.00225, 2023
8 2023 Combined Iodine-and Sulfur-Based Treatments for an Effective Passivation of GeSn Surface L Groell, A Attiaoui, S Assali, O Moutanabbir
The Journal of Physical Chemistry C 125 (17), 9516-9525, 2021
8 2021 Probing Semiconductor Heterostructures from the Atomic to the Micrometer Scale S Koelling, S Assali, M Atalla, A Kumar, A Attiaoui, M Lodari, A Sammak, ...
ECS Transactions 98 (5), 447, 2020
6 2020 All-Group IV membrane room-temperature mid-infrared photodetector MRM Atalla, S Assali, A Attiaoui, C Lemieux-Leduc, A Kumar, S Abdi, ...
arXiv preprint arXiv:2007.12239, 2020
5 2020 Radiative carrier lifetime in G Daligou, A Attiaoui, S Assali, P Del Vecchio, O Moutanabbir
Physical Review Applied 20 (6), 064001, 2023
4 2023 500-period epitaxial Ge/Si0. 18Ge0. 82 multi-quantum wells on silicon S Assali, S Koelling, Z Abboud, J Nicolas, A Attiaoui, O Moutanabbir
Journal of Applied Physics 132 (17), 2022
4 2022 Electronic Signature of Subnanometer Interfacial Broadening in Heterostructures A Attiaoui, G Fettu, S Mukherjee, M Bauer, O Moutanabbir
Nano Letters 22 (17), 7080-7086, 2022
4 2022 
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