| Ultrafast and broadband photodetectors based on a perovskite/organic bulk heterojunction for large-dynamic-range imaging C Li, H Wang, F Wang, T Li, M Xu, H Wang, Z Wang, X Zhan, W Hu, ... Light: Science & Applications 9 (1), 31, 2020 | 525 | 2020 |
| Recent progress on electrical and optical manipulations of perovskite photodetectors F Wang, X Zou, M Xu, H Wang, H Wang, H Guo, J Guo, P Wang, M Peng, ... Advanced Science 8 (14), 2100569, 2021 | 227 | 2021 |
| Van der Waals two-color infrared photodetector P Wu, L Ye, L Tong, P Wang, Y Wang, H Wang, H Ge, Z Wang, Y Gu, ... Light: Science & Applications 11 (1), 6, 2022 | 154 | 2022 |
| WSe2 Photovoltaic Device Based on Intramolecular p–n Junction Y Tang, Z Wang, P Wang, F Wu, Y Wang, Y Chen, H Wang, M Peng, ... Small 15 (12), 1805545, 2019 | 102 | 2019 |
| Optoelectronic properties of printed photogating carbon nanotube thin film transistors and their application for light-stimulated neuromorphic devices L Shao, H Wang, Y Yang, Y He, Y Tang, H Fang, J Zhao, H Xiao, K Liang, ... ACS applied materials & interfaces 11 (12), 12161-12169, 2019 | 99 | 2019 |
| Stable and sensitive tin-lead perovskite photodetectors enabled by azobenzene derivative for near-infrared acousto-optic conversion communications N Ma, J Jiang, Y Zhao, L He, Y Ma, H Wang, L Zhang, C Shan, L Shen, ... Nano Energy 86, 106113, 2021 | 92 | 2021 |
| A versatile photodetector assisted by photovoltaic and bolometric effects W Jiang, T Zheng, B Wu, H Jiao, X Wang, Y Chen, X Zhang, M Peng, ... Light: Science & Applications 9 (1), 160, 2020 | 87 | 2020 |
| Extremely Low Dark Current MoS2 Photodetector via 2D Halide Perovskite as the Electron Reservoir H Wang, X Wang, Y Chen, S Zhang, W Jiang, X Zhang, J Qin, J Wang, ... Advanced Optical Materials 8 (6), 1901402, 2020 | 83 | 2020 |
| Highly sensitive InSb nanosheets infrared photodetector passivated by ferroelectric polymer S Zhang, H Jiao, X Wang, Y Chen, H Wang, L Zhu, W Jiang, J Liu, L Sun, ... Advanced Functional Materials 30 (51), 2006156, 2020 | 66 | 2020 |
| Recent progress and challenges on two-dimensional material photodetectors from the perspective of advanced characterization technologies F Zhong, H Wang, Z Wang, Y Wang, T He, P Wu, M Peng, H Wang, T Xu, ... Nano Research 14, 1840-1862, 2021 | 58 | 2021 |
| Emerging Single‐Photon Detectors Based on Low‐Dimensional Materials H Wang, J Guo, J Miao, W Luo, Y Gu, R Xie, F Wang, L Zhang, P Wang, ... Small 18 (5), 2103963, 2022 | 45 | 2022 |
| Gate-tunable the interface properties of GaAs–WSe2 (1D–2D) vdWs heterojunction for high-responsivity, self-powered photodetector X Chen, B Jiang, D Wang, G Li, H Wang, H Wang, F Wang, P Wang, ... Applied Physics Letters 118 (4), 2021 | 44 | 2021 |
| Extrinsic photoconduction induced short‐wavelength infrared photodetectors based on Ge‐based chalcogenides T He, Z Wang, R Cao, Q Li, M Peng, R Xie, Y Huang, Y Wang, J Ye, P Wu, ... Small 17 (4), 2006765, 2021 | 43 | 2021 |
| Next‐Generation Photodetectors beyond Van Der Waals Junctions F Wang, T Zhang, R Xie, A Liu, F Dai, Y Chen, T Xu, H Wang, Z Wang, ... Advanced Materials 36 (3), 2301197, 2024 | 42 | 2024 |
| Pristine PN junction toward atomic layer devices H Xia, M Luo, W Wang, H Wang, T Li, Z Wang, H Xu, Y Chen, Y Zhou, ... Light: Science & Applications 11 (1), 170, 2022 | 42 | 2022 |
| Recent progress on infrared photodetectors based on InAs and InAsSb nanowires T Xu, H Wang, X Chen, M Luo, L Zhang, Y Wang, F Chen, C Shan, C Yu Nanotechnology 31 (29), 294004, 2020 | 42 | 2020 |
| Substitutionally Doped MoSe2 for High‐Performance Electronics and Optoelectronics F Zhong, J Ye, T He, L Zhang, Z Wang, Q Li, B Han, P Wang, P Wu, Y Yu, ... Small 17 (47), 2102855, 2021 | 36 | 2021 |
| Optoelectronic Synapses Based on Photo‐Induced Doping in MoS2/h‐BN Field‐Effect Transistors M Xu, T Xu, A Yu, H Wang, H Wang, M Zubair, M Luo, C Shan, X Guo, ... Advanced Optical Materials 9 (20), 2100937, 2021 | 32 | 2021 |
| Polarizer-free polarimetric image sensor through anisotropic two-dimensional GeSe X Wang, F Zhong, J Kang, C Liu, M Lei, L Pan, H Wang, F Wang, Z Zhou, ... Science China Materials, 1230-1237, 2021 | 32 | 2021 |
| Slowing hot-electron relaxation in mix-phase nanowires for hot-carrier photovoltaics H Wang, F Wang, T Xu, H Xia, R Xie, X Zhou, X Ge, W Liu, Y Zhu, L Sun, ... Nano letters 21 (18), 7761-7768, 2021 | 25 | 2021 |
Weida Hu (胡伟达)Shanghai Institute of Technical Physics, CASAdresă de e-mail confirmată pe mail.sitp.ac.cn
