Byungha Shin

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	Toate	Din 2020
Referințe bibliografice	10388	4821
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Supratik GuhaUniversity of Chicago and Argonne National LaboratoryAdresă de e-mail confirmată pe uchicago.edu
Oki GunawanResearch Staff Member IBM, Princeton UniversityAdresă de e-mail confirmată pe us.ibm.com
David B. MitziDuke UniversityAdresă de e-mail confirmată pe duke.edu
Teodor TodorovIBMAdresă de e-mail confirmată pe us.ibm.com
Talia GershonIBM TJ Watson Research CenterAdresă de e-mail confirmată pe us.ibm.com
Yun Seog LeeSeoul National UniversityAdresă de e-mail confirmată pe snu.ac.kr
Jay CheyIBMAdresă de e-mail confirmată pe us.ibm.com
Tayfun GokmenPrinceton University, IBM T. J. Watson Research CenterAdresă de e-mail confirmată pe us.ibm.com
Michael J. AzizGene and Tracy Sykes Professor of Materials and Energy Technologies, Harvard School of EngineeringAdresă de e-mail confirmată pe harvard.edu
Mark J.W. RodwellProfessor of Electrical and Computer Engineering, University of California, Santa BarbaraAdresă de e-mail confirmată pe ece.ucsb.edu
pk hurleyTyndall National Institute, University College CorkAdresă de e-mail confirmată pe tyndall.ie
Ashish BaraskarSandisk, GLOBAL FOUNDRIES, UCSBAdresă de e-mail confirmată pe ece.ucsb.edu
Mark WisteyAssociate Professor of Physics, Texas State UniversityAdresă de e-mail confirmată pe txstate.edu
Uttam SingisettiProfessor, Electrical Engineering, Univeristy at Buffalo (SUNY)Adresă de e-mail confirmată pe buffalo.edu
Lingquan WangUC San Diego; BroadcomAdresă de e-mail confirmată pe ucsd.edu
Rachel S. GoldmanProfessor of Materials Science and Engineering, University of MichiganAdresă de e-mail confirmată pe umich.edu
Chris G. Van de WalleProfessor of Materials, University of California, Santa BarbaraAdresă de e-mail confirmată pe mrl.ucsb.edu
Justin WeberComputational Materials Science, Intel CorporationAdresă de e-mail confirmată pe intel.com
Steven BentleyGLOBALFOUNDRIESAdresă de e-mail confirmată pe globalfoundries.com
Devendra SadanaibmAdresă de e-mail confirmată pe us.ibm.com

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Byungha Shin

KAIST

Adresă de e-mail confirmată pe kaist.ac.kr - Pagina de pornire

Photovoltaics


Titlu Sortați după descrierea bibliografică Sortați după an Sortați după titlu	Citat de Citat de	Anul
Thin film solar cell with 8.4% power conversion efficiency using an earth‐abundant Cu₂ZnSnS₄ absorber B Shin, O Gunawan, Y Zhu, NA Bojarczuk, SJ Chey, S Guha Progress in Photovoltaics: Research and Applications 21 (1), 72-76, 2013	1418	2013
Thermally evaporated Cu2ZnSnS4 solar cells K Wang, O Gunawan, T Todorov, B Shin, SJ Chey, NA Bojarczuk, D Mitzi, ... Applied Physics Letters 97 (14), 2010	853	2010
Efficient, stable silicon tandem cells enabled by anion-engineered wide-bandgap perovskites D Kim, HJ Jung, IJ Park, BW Larson, SP Dunfield, C Xiao, J Kim, J Tong, ... Science 368 (6487), 155-160, 2020	550	2020
High efficiency Cu 2 ZnSn (S, Se) 4 solar cells by applying a double In 2 S 3/CdS emitter J Kim, H Hiroi, TK Todorov, O Gunawan, M Kuwahara, T Gokmen, D Nair, ... Adv. Mater 26 (44), 7427-7431, 2014	507	2014
Control of an interfacial MoSe2 layer in Cu2ZnSnSe4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier B Shin, Y Zhu, NA Bojarczuk, S Jay Chey, S Guha Applied Physics Letters 101 (5), 2012	414	2012
Band alignment at the Cu2ZnSn (SxSe1− x) 4/CdS interface R Haight, A Barkhouse, O Gunawan, B Shin, M Copel, M Hopstaken, ... Applied Physics Letters 98 (25), 2011	336	2011
Building energy performance evaluation of building integrated photovoltaic (BIPV) window with semi-transparent solar cells YT Chae, J Kim, H Park, B Shin Applied Energy 129, 217-227, 2014	315	2014
An ultrahigh‐performance photodetector based on a perovskite–transition‐metal‐dichalcogenide hybrid structure DH Kang, SR Pae, J Shim, G Yoo, J Jeon, JW Leem, JS Yu, S Lee, B Shin, ... Advanced Materials 28 (35), 7799-7806, 2016	291	2016
The Role of Sodium as a Surfactant and Suppressor of Non‐Radiative Recombination at Internal Surfaces in Cu₂ZnSnS₄ T Gershon, B Shin, N Bojarczuk, M Hopstaken, DB Mitzi, S Guha Advanced Energy Materials 5 (2), 1400849, 2015	264	2015
Structural and elemental characterization of high efficiency Cu2ZnSnS4 solar cells K Wang, B Shin, KB Reuter, T Todorov, DB Mitzi, S Guha Applied Physics Letters 98 (5), 2011	258	2011
Electronic properties of the Cu2ZnSn (Se, S) 4 absorber layer in solar cells as revealed by admittance spectroscopy and related methods O Gunawan, T Gokmen, CW Warren, JD Cohen, TK Todorov, ... Applied Physics Letters 100 (25), 2012	239	2012
A Distributed Model for Border Traps in MOS Devices Y Yuan, L Wang, B Yu, B Shin, J Ahn, PC McIntyre, PM Asbeck, ... IEEE Electron Device Letters 32 (4), 485-487, 2011	219	2011
Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates B Shin, JR Weber, RD Long, PK Hurley, CG Van de Walle, PC McIntyre Applied physics letters 96 (15), 2010	205	2010
Amorphizing noble metal chalcogenide catalysts at the single-layer limit towards hydrogen production Y He, L Liu, C Zhu, S Guo, P Golani, B Koo, P Tang, Z Zhao, M Xu, C Zhu, ... Nature Catalysis 5 (3), 212-221, 2022	187	2022
Laser crystallization of organic–inorganic hybrid perovskite solar cells T Jeon, HM Jin, SH Lee, JM Lee, HI Park, MK Kim, KJ Lee, B Shin, ... ACS nano 10 (8), 7907-7914, 2016	147	2016
On the kinetics of MoSe2 interfacial layer formation in chalcogen-based thin film solar cells with a molybdenum back contact B Shin, NA Bojarczuk, S Guha Applied Physics Letters 102 (9), 2013	145	2013
Continuous 3D Titanium Nitride Nanoshell Structure for Solar‐Driven Unbiased Biocatalytic CO₂ Reduction SK Kuk, Y Ham, K Gopinath, P Boonmongkolras, Y Lee, YW Lee, ... Advanced Energy Materials 9 (25), 1900029, 2019	127	2019
Stability of halide perovskite solar cell devices: in situ observation of oxygen diffusion under biasing HJ Jung, D Kim, S Kim, J Park, VP Dravid, B Shin Advanced Materials 30 (39), 1802769, 2018	125	2018
Effects of a SnO 2 hole blocking layer in a BiVO 4-based photoanode on photoelectrocatalytic water oxidation S Byun, B Kim, S Jeon, B Shin Journal of Materials Chemistry A 5 (15), 6905-6913, 2017	120	2017
Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth U Singisetti, MA Wistey, GJ Burek, AK Baraskar, BJ Thibeault, ... IEEE Electron Device Letters 30 (11), 1128-1130, 2009	113	2009

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