Mark Law

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	Toate	Din 2020
Referințe bibliografice	5237	1414
h-index	36	20
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Kevin S. JonesProfessor, University of FloridaAdresă de e-mail confirmată pe eng.ufl.edu
Stephen PeartonProfessor of Materials Science and Engineering, University of FloridaAdresă de e-mail confirmată pe mse.ufl.edu
Fan RenUniversity of Florida, Bell Lab, AT&TAdresă de e-mail confirmată pe che.ufl.edu
Erin PatrickInstructional Associate Professor, University of FloridaAdresă de e-mail confirmată pe ece.ufl.edu
Ribhu SharmaUniversity of Florida; Infineon TechnologiesAdresă de e-mail confirmată pe ufl.edu
SOKRATES T. PANTELIDESProfessor of Physics, Vanderbilt UniversityAdresă de e-mail confirmată pe vanderbilt.edu
Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt UniversityAdresă de e-mail confirmată pe vanderbilt.edu
Leonard RubinAxcelis TechnologiesAdresă de e-mail confirmată pe alum.mit.edu
blair tuttlePenn State Erie; The Behrend CollegeAdresă de e-mail confirmată pe psu.edu
Tomas Diaz de la RubiaUniversity of OklahomaAdresă de e-mail confirmată pe ou.edu
Yaser M. HaddaraMcMaster UniversityAdresă de e-mail confirmată pe mcmaster.ca
Marko J. TadjerNaval Research LaboratoryAdresă de e-mail confirmată pe nrl.navy.mil
Daniel M. FleetwoodProfessor of Electrical Engineering, Vanderbilt UniversityAdresă de e-mail confirmată pe vanderbilt.edu
Robert EllimanAustralian National UniversityAdresă de e-mail confirmată pe anu.edu.au
Lu LiuUniversity of Florida, Stanford UniversityAdresă de e-mail confirmată pe stanford.edu
Minghan XianMicron Technology; University of Florida; University of DelawareAdresă de e-mail confirmată pe ufl.edu
S. T. PicrauxLos Alamos National LaboratoryAdresă de e-mail confirmată pe lanl.gov
Eric ChasonBrown UniversityAdresă de e-mail confirmată pe brown.edu
Saurabh MorarkaAdresă de e-mail confirmată pe intel.com
Martin GilesIntel Corporation, RetiredAdresă de e-mail confirmată pe ieee.org

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Mark Law

University of Florida

Adresă de e-mail confirmată pe eng.ufl.edu

Technology Computer Aided Design Silicon Technology III-V Devices Superconducting Technology


Titlu Sortați după descrierea bibliografică Sortați după an Sortați după titlu	Citat de Citat de	Anul
Ionizing radiation damage effects on GaN devices SJ Pearton, F Ren, E Patrick, ME Law, AY Polyakov ECS Journal of solid state science and technology 5 (2), Q35, 2015	397	2015
Ion beams in silicon processing and characterization E Chason, ST Picraux, JM Poate, JO Borland, MI Current, ... Journal of applied physics 81 (10), 6513-6561, 1997	367	1997
Self-consistent model of minority-carrier lifetime, diffusion length, and mobility ME Law, E Solley, M Liang, DE Burk IEEE Electron device letters 12 (8), 401-403, 1991	150	1991
Continuum based modeling of silicon integrated circuit processing: An object oriented approach ME Law, SM Cea Computational Materials Science 12 (4), 289-308, 1998	139	1998
Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon YM Haddara, BT Folmer, ME Law, T Buyuklimanli Applied Physics Letters 77 (13), 1976-1978, 2000	118	2000
The effect of impurities on diffusion and activation of ion implanted boron in silicon LS Robertson, R Brindos, KS Jones, ME Law, DF Downey, S Falk, J Liu MRS Online Proceedings Library (OPL) 610, B5. 8, 2000	94	2000
Verification of analytic point defect models using SUPREM-IV (dopant diffusion) ME Law, RW Dutton IEEE transactions on computer-aided design of integrated circuits and …, 1988	92	1988
A Quantitative Model for ELDRS andDegradation Effects in Irradiated Oxides Based on First Principles Calculations NL Rowsey, ME Law, RD Schrimpf, DM Fleetwood, BR Tuttle, ... IEEE Transactions on Nuclear Science 58 (6), 2937-2944, 2011	91	2011
SUPREM-IV user’s manual ME Law, CS Rafferty, RW Dutton Standford University, 1988	78	1988
Effects of hydrostatic pressure on dopant diffusion in silicon H Park, KS Jones, JA Slinkman, ME Law Journal of applied physics 78 (6), 3664-3670, 1995	75	1995
Perspective on flipping circuits I GJ Kim, EE Patrick, R Srivastava, ME Law IEEE Transactions on Education 57 (3), 188-192, 2014	71	2014
ColdFlux superconducting EDA and TCAD tools project: Overview and progress CJ Fourie, K Jackman, MM Botha, S Razmkhah, P Febvre, CL Ayala, Q Xu, ... IEEE Transactions on Applied Superconductivity 29 (5), 1-7, 2019	70	2019
Reliability studies of AlGaN/GaN high electron mobility transistors DJ Cheney, EA Douglas, L Liu, CF Lo, YY Xi, BP Gila, F Ren, D Horton, ... Semiconductor Science and Technology 28 (7), 074019, 2013	70	2013
Diffusion of ion implanted boron in preamorphized silicon KS Jones, LH Zhang, V Krishnamoorthy, M Law, DS Simons, P Chi, ... Applied physics letters 68 (19), 2672-2674, 1996	62	1996
Point defect based modeling of low dose silicon implant damage and oxidation effects on phosphorus and boron diffusion in silicon H Park, ME Law Journal of applied physics 72 (8), 3431-3439, 1992	62	1992
Stressed multidirectional solid-phase epitaxial growth of Si NG Rudawski, KS Jones, S Morarka, ME Law, RG Elliman Journal of Applied Physics 105 (8), 2009	61	2009
Fluorine-enhanced boron diffusion in amorphous silicon JM Jacques, LS Robertson, KS Jones, ME Law, M Rendon, J Bennett Applied physics letters 82 (20), 3469-3471, 2003	55	2003
Simulation of oxide trapping noise in submicron n-channel MOSFETs FC Hou, G Bosman, ME Law IEEE Transactions on Electron Devices 50 (3), 846-852, 2003	55	2003
The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing DR Hughart, RD Schrimpf, DM Fleetwood, NL Rowsey, ME Law, BR Tuttle, ... IEEE Transactions on Nuclear Science 59 (6), 3087-3092, 2012	54	2012
Diffusion of implanted nitrogen in silicon L Shaik Adam, ME Law, KS Jones, O Dokumaci, CS Murthy, S Hegde Journal of Applied Physics 87 (5), 2282-2284, 2000	52	2000

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