Arbitrary helicity control of circularly polarized light from lateral-type spin-polarized light-emitting diodes at room temperature N Nishizawa, M Aoyama, RC Roca, K Nishibayashi, H Munekata Applied Physics Express 11 (5), 053003, 2018 | 23 | 2018 |
Investigation of helicity-dependent photocurrent at room temperature from a Fe/x-AlOx/p-GaAs Schottky junction with oblique surface illumination RC Roca, N Nishizawa, K Nishibayashi, H Munekata Japanese Journal of Applied Physics 56 (4S), 04CN05, 2017 | 16 | 2017 |
Change in topography of InAs submonolayer nanostructures at the 2D to 3D transition RC Roca, I Kamiya physica status solidi (b) 258 (2), 2000349, 2021 | 14 | 2021 |
A lateral-type spin-photodiode based on Fe/x-AlOx/p-InGaAs junctions with a refracting-facet side window RC Roca, N Nishizawa, K Nishibayashi, H Munekata Journal of Applied Physics 123 (21), 2018 | 10 | 2018 |
Atomic layer deposition of diethylzinc/zinc oxide on InAs surface quantum dots: Self-clean-up and passivation processes H Mohammadi, RC Roca, Y Zhang, H Lee, Y Ohshita, N Iwata, I Kamiya Applied Surface Science 612, 155790, 2023 | 6 | 2023 |
Structural investigation of the 2D to 3D transition in stacked submonolayer InAs nanostructures RC Roca, I Kamiya AIP Advances 11 (7), 2021 | 6 | 2021 |
Correlation between the structure and luminescence of InAs submonolayer stacked nanostructures RC Roca, I Kamiya Japanese Journal of Applied Physics 60 (SB), SBBH06, 2021 | 5 | 2021 |
Modeling and optimization of refracting-facet spin-photodiodes based on ferromagnetic metal-insulator-semiconductor tunnel junctions RC Roca, N Nishizawa, H Munekata Spin 10 (03), 2050017, 2020 | 5 | 2020 |
Anomalous photoluminescence of InAs surface quantum dots: intensity enhancement and strain control by underlying quantum dots H Mohammadi, RC Roca, I Kamiya Nanotechnology 33 (41), 415204, 2022 | 4 | 2022 |
Photoluminescence tuning of stacked submonolayer (SML) InAs nanostructures across the 2D to 3D transition RC Roca, I Kamiya Applied Physics Letters 118 (18), 2021 | 4 | 2021 |
Submonolayer stacking growth of In (Ga) As nanostructures for optoelectronic applications: an alternative for Stranski–Krastanov growth I Kamiya, RC Roca Japanese Journal of Applied Physics 60 (SB), SB0804, 2021 | 4 | 2021 |
Below‐Bandgap Photoluminescence from GaAs RC Roca, K Fukui, H Mizuno, M Suzuki, I Kamiya physica status solidi (b) 257 (2), 1900391, 2020 | 4 | 2020 |
Below-bandgap photoluminescence from GaAs substrates induced by pre-MBE-growth treatments RC Roca, K Fukui, H Mizuno, M Suzuki, I Kamiya AIP Advances 9 (7), 2019 | 4 | 2019 |
Progress in the room temperature operation of GaAs-based lateral-type spin-PD in near-infrared wavelength region RC Roca, N Nishizawa, K Nishibayashi, H Munekata Spintronics X 10357, 103571C, 2017 | 4 | 2017 |
Passivation capping of InAs surface quantum dots by TMA/Al2O3: PL enhancement and blueshift suppression H Mohammadi, RC Roca, Y Zhang, H Lee, Y Ohshita, N Iwata, I Kamiya Journal of Applied Physics 133 (18), 2023 | 3 | 2023 |
Effect of the number of stacks on the 2D to 3D transition of stacked submonolayer (SML) InAs nanostructures RC Roca, I Kamiya Journal of Crystal Growth 593, 126770, 2022 | 2 | 2022 |
Optical spin injection and detection in submonolayer InAs/GaAs nanostructures RCI Roca, I Kamiya Nanoscale and Quantum Materials: From Synthesis and Laser Processing to …, 2024 | 1 | 2024 |
ArF excimer laser activation of Mg-doped GaN small area mesa device ME Villamin, RC Roca, I Kamiya, N Iwata Gallium Nitride Materials and Devices XIX 12886, 76-80, 2024 | 1 | 2024 |
Novel Passivation Method of InAs Surface Quantum Dots: Near Nondestructive Diethylzinc Atomic Layer Deposition H Mohammadi, RC Roca, H Lee, Y Ohshita, N Iwata, I Kamiya Available at SSRN 4948296, 2024 | | 2024 |
Unraveling the Impact of Trimethylaluminum in the Nondestructive Passivation of InAs Surface Quantum Dots H Mohammadi, RC Roca, H Lee, Y Ohshita, N Iwata, I Kamiya Available at SSRN 4948298, 2024 | | 2024 |