Gordon Callsen

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Axel HoffmannInstitute of Solid State Physics, Technical University of BerlinAdresă de e-mail confirmată pe tu-berlin.de
Markus R. WagnerPaul-Drude-Institut für FestkörperelektronikAdresă de e-mail confirmată pe pdi-berlin.de
Sebastian ReparazINSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONAAdresă de e-mail confirmată pe icmab.es
Ronny KirsteResearch associate, NCSUAdresă de e-mail confirmată pe ncsu.edu
Thomas KureInstitut für Festkörperphysik, Technische Universität BerlinAdresă de e-mail confirmată pe TU-Berlin.de
Christian NenstielTechnische Universität BerlinAdresă de e-mail confirmată pe physik.tu-berlin.de
Nicolas GrandjeanInstitute of Physics, EPFLAdresă de e-mail confirmată pe epfl.ch
Raphaël ButtéSenior scientist, Institute of Physics, EPFL, SwitzerlandAdresă de e-mail confirmată pe epfl.ch
Zlatko SitarKobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina StateAdresă de e-mail confirmată pe ncsu.edu
Felix NippertInstitut für Festkörperphysik, TU BerlinAdresă de e-mail confirmată pe physik.tu-berlin.de
Gerald M. O. HönigDres. Hönig Innovationsgesellschaft bürgerlichen RechtsAdresă de e-mail confirmată pe physik.tu-berlin.de
Ramon CollazoProfessor of Materials Science and Engineering, NCSUAdresă de e-mail confirmată pe ncsu.edu
Bruno K MeyerJustus Liebig University GiessenAdresă de e-mail confirmată pe mailbox.tu-berlin.de
Andrei SchliwaPrincipal Scientist @ Technische Universität BerlinAdresă de e-mail confirmată pe tu-berlin.de
Satoshi KAKOResearch Scientist at NTT Research Inc.Adresă de e-mail confirmată pe ntt-research.com
Jan-Hindrik SchulzeTechnische Universität Berlin, Institute of solid state PhysicsAdresă de e-mail confirmată pe physik.tu-berlin.de
Armin Dadgarapl. Prof.Adresă de e-mail confirmată pe ovgu.de
Martin KaiserTechnical University of BerlinAdresă de e-mail confirmată pe physik.tu-berlin.de
Stephan ReitzensteinTechnische Universität BerlinAdresă de e-mail confirmată pe physik.tu-berlin.de
Anna RodinaChief Scientist, Ioffe InstituteAdresă de e-mail confirmată pe mail.ioffe.ru

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Gordon Callsen

University of Bremen, Institute of Solid State Physics

Adresă de e-mail confirmată pe ifp.uni-bremen.de - Pagina de pornire

nitrides oxides nanostructures spectroscopy thermal properties


Titlu Sortați după descrierea bibliografică Sortați după an Sortați după titlu	Citat de Citat de	Anul
Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ... Physical Review B—Condensed Matter and Materials Physics 84 (3), 035313, 2011	252	2011
Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap F Nippert, SY Karpov, G Callsen, B Galler, T Kure, C Nenstiel, MR Wagner, ... Applied Physics Letters 109 (16), 2016	110	2016
Signature of the two-dimensional phonon dispersion in graphene probed by double-resonant Raman scattering P May, M Lazzeri, P Venezuela, F Herziger, G Callsen, JS Reparaz, ... Physical Review B—Condensed Matter and Materials Physics 87 (7), 075402, 2013	98	2013
Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals C Rauch, W Gehlhoff, MR Wagner, E Malguth, G Callsen, R Kirste, ... Journal of Applied Physics 107 (2), 2010	95	2010
A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities ST Jagsch, NV Triviño, F Lohof, G Callsen, S Kalinowski, IM Rousseau, ... Nature communications 9 (1), 564, 2018	82	2018
Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements G Callsen, JS Reparaz, MR Wagner, R Kirste, C Nenstiel, A Hoffmann, ... Applied Physics Letters 98 (6), 2011	79	2011
Optical signature of Mg-doped GaN: Transfer processes G Callsen, MR Wagner, T Kure, JS Reparaz, M Bügler, J Brunnmeier, ... Physical Review B—Condensed Matter and Materials Physics 86 (7), 075207, 2012	75	2012
Excited state properties of donor bound excitons in ZnO BK Meyer, J Sann, S Eisermann, S Lautenschlaeger, MR Wagner, ... Physical Review B—Condensed Matter and Materials Physics 82 (11), 115207, 2010	69	2010
Optical signatures of nitrogen acceptors in ZnO S Lautenschlaeger, S Eisermann, G Haas, EA Zolnowski, MN Hofmann, ... Physical Review B—Condensed Matter and Materials Physics 85 (23), 235204, 2012	67	2012
Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN R Kirste, R Collazo, G Callsen, MR Wagner, T Kure, J Sebastian Reparaz, ... Journal of Applied Physics 110 (9), 2011	63	2011
Point-defect nature of the ultraviolet absorption band in AlN D Alden, JS Harris, Z Bryan, JN Baker, P Reddy, S Mita, G Callsen, ... Physical Review Applied 9 (5), 054036, 2018	60	2018
Manifestation of unconventional biexciton states in quantum dots G Hönig, G Callsen, A Schliwa, S Kalinowski, C Kindel, S Kako, ... Nature communications 5 (1), 5721, 2014	59	2014
Germanium–the superior dopant in n‐type GaN C Nenstiel, M Bügler, G Callsen, F Nippert, T Kure, S Fritze, A Dadgar, ... physica status solidi (RRL)–Rapid Research Letters 9 (12), 716-721, 2015	58	2015
Effects of strain on the valence band structure and exciton-polariton energies in ZnO MR Wagner, G Callsen, JS Reparaz, R Kirste, A Hoffmann, AV Rodina, ... Physical Review B 88 (23), 235210, 2013	58	2013
Compensation effects in GaN: Mg probed by Raman spectroscopy and photoluminescence measurements R Kirste, MP Hoffmann, J Tweedie, Z Bryan, G Callsen, T Kure, C Nenstiel, ... Journal of Applied Physics 113 (10), 2013	58	2013
Steering photon statistics in single quantum dots: From one-to two-photon emission G Callsen, A Carmele, G Hönig, C Kindel, J Brunnmeier, MR Wagner, ... Physical Review B—Condensed Matter and Materials Physics 87 (24), 245314, 2013	56	2013
Toward bright and pure single photon emitters at 300 K based on GaN quantum dots on silicon S Tamariz, G Callsen, J Stachurski, K Shojiki, R Butté, N Grandjean Acs Photonics 7 (6), 1515-1522, 2020	51	2020
Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method D Gogova, PP Petrov, M Buegler, MR Wagner, C Nenstiel, G Callsen, ... Journal of Applied Physics 113 (20), 2013	51	2013
Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence F Nippert, S Karpov, I Pietzonka, B Galler, A Wilm, T Kure, C Nenstiel, ... Japanese Journal of Applied Physics 55 (5S), 05FJ01, 2016	49	2016
Spectral diffusion in nitride quantum dots: Emission energy dependent linewidths broadening via giant built‐in dipole moments C Kindel, G Callsen, S Kako, T Kawano, H Oishi, G Hönig, A Schliwa, ... physica status solidi (RRL)–Rapid Research Letters 8 (5), 408-413, 2014	45	2014

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