Articole cu mandate pentru acces public - Nian-Ke ChenAflați mai multe
Nu sunt disponibile nicăieri: 3
Electrical properties and structural transition of Ge2Sb2Te5 adjusted by rare-earth element Gd for nonvolatile phase-change memory
Y Chen, N Chen, B Chen, Q Zhang, X Li, Q Deng, B Zhang, S Zhang, ...
Journal of Applied Physics 124 (14), 2018
Mandate: National Natural Science Foundation of China
Amorphous structure and bonding chemistry of aluminium antimonide (AlSb)) alloy for phase-change memory device
Y Sun, X Wang, J Du, N Chen, H Yu, Q Wu, X Meng
Chemical Research in Chinese Universities 32, 76-81, 2016
Mandate: National Natural Science Foundation of China
Orbital-selective electronic excitation in phase-change memory materials: A brief review
NK Chen, BQ Wang, XP Wang, XB Li
Zeitschrift für Naturforschung B 76 (10-12), 537-541, 2021
Mandate: National Natural Science Foundation of China
Disponibile undeva: 41
Monolayer II-VI semiconductors: A first-principles prediction
H Zheng, XB Li, NK Chen, SY Xie, WQ Tian, Y Chen, H Xia, SB Zhang, ...
Physical Review B 92 (11), 115307, 2015
Mandate: US Department of Energy, National Natural Science Foundation of China
Phase‐change superlattice materials toward low power consumption and high density data storage: microscopic picture, working principles, and optimization
XB Li, NK Chen, XP Wang, HB Sun
Advanced Functional Materials 28 (44), 1803380, 2018
Mandate: National Natural Science Foundation of China
Determination of formation and ionization energies of charged defects in two-dimensional materials
D Wang, D Han, XB Li, SY Xie, NK Chen, WQ Tian, D West, HB Sun, ...
Physical review letters 114 (19), 196801, 2015
Mandate: US Department of Energy, National Natural Science Foundation of China
First-principles calculations of a robust two-dimensional boron honeycomb sandwiching a triangular molybdenum layer
SY Xie, XB Li, WQ Tian, NK Chen, XL Zhang, Y Wang, S Zhang, HB Sun
Physical Review B 90 (3), 035447, 2014
Mandate: National Natural Science Foundation of China
Two‐dimensional In2Se3: A rising advanced material for ferroelectric data storage
YT Huang, NK Chen, ZZ Li, XP Wang, HB Sun, S Zhang, XB Li
InfoMat 4 (8), e12341, 2022
Mandate: National Natural Science Foundation of China
High‐throughput screening for phase‐change memory materials
YT Liu, XB Li, H Zheng, NK Chen, XP Wang, XL Zhang, HB Sun, S Zhang
Advanced Functional Materials 31 (21), 2009803, 2021
Mandate: US Department of Energy, National Natural Science Foundation of China
Directional forces by momentumless excitation and order-to-order transition in peierls-distorted solids: the case of GeTe
NK Chen, XB Li, J Bang, XP Wang, D Han, D West, S Zhang, HB Sun
Physical Review Letters 120 (18), 185701, 2018
Mandate: US Department of Energy, National Natural Science Foundation of China
Electric field analyses on monolayer semiconductors: the example of InSe
XP Wang, XB Li, NK Chen, JH Zhao, QD Chen, HB Sun
Physical Chemistry Chemical Physics 20 (10), 6945-6950, 2018
Mandate: National Natural Science Foundation of China
Origin of high thermal stability of amorphous Ge1Cu2Te3 alloy: A significant Cu-bonding reconfiguration modulated by Te lone-pair electrons for crystallization
NK Chen, XB Li, XP Wang, MJ Xia, SY Xie, HY Wang, Z Song, S Zhang, ...
Acta Materialia 90, 88-93, 2015
Mandate: US Department of Energy, National Natural Science Foundation of China
A novel two-dimensional MgB 6 crystal: metal-layer stabilized boron kagome lattice
SY Xie, XB Li, WQ Tian, NK Chen, Y Wang, S Zhang, HB Sun
Physical Chemistry Chemical Physics 17 (2), 1093-1098, 2015
Mandate: US Department of Energy, National Natural Science Foundation of China
Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus
D Wang, D Han, XB Li, NK Chen, D West, V Meunier, S Zhang, HB Sun
Physical Review B 96 (15), 155424, 2017
Mandate: US Department of Energy, National Natural Science Foundation of China
Element-specific amorphization of vacancy-ordered GeSbTe for ternary-state phase change memory
XP Wang, XB Li, NK Chen, QD Chen, XD Han, S Zhang, HB Sun
Acta Materialia 136, 242-248, 2017
Mandate: US Department of Energy, National Natural Science Foundation of China
Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb2Te3
XP Wang, XB Li, NK Chen, B Chen, F Rao, S Zhang
Advanced Science 8 (13), 2004185, 2021
Mandate: US Department of Energy, National Natural Science Foundation of China
Metal–insulator transition of Ge–Sb–Te superlattice: an electron counting model study
NK Chen, XB Li, XP Wang, SY Xie, WQ Tian, S Zhang, HB Sun
IEEE Transactions on Nanotechnology 17 (1), 140-146, 2017
Mandate: US Department of Energy, National Natural Science Foundation of China
Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport
D Wang, D Han, D West, NK Chen, SY Xie, WQ Tian, V Meunier, S Zhang, ...
npj Computational Materials 5 (1), 8, 2019
Mandate: US Department of Energy, National Natural Science Foundation of China
Strong electron-polarized atom chain in amorphous phase-change memory GeSbTe alloy
NK Chen, XB Li, XP Wang, WQ Tian, S Zhang, HB Sun
Acta Materialia 143, 102-106, 2018
Mandate: US Department of Energy, National Natural Science Foundation of China
Time-dependent density-functional theory molecular-dynamics study on amorphization of Sc-Sb-Te alloy under optical excitation
XP Wang, XB Li, NK Chen, J Bang, R Nelson, C Ertural, R Dronskowski, ...
npj Computational Materials 6 (1), 31, 2020
Mandate: US Department of Energy, National Natural Science Foundation of China
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