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Michael Haverty
Michael Haverty
Applied Materials, NextMol, Property Vectors, Exabyte, Intel Corporation
Adresă de e-mail confirmată pe stanfordalumni.org - Pagina de pornire
Titlu
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The ultimate CMOS device and beyond
KJ Kuhn, U Avci, A Cappellani, MD Giles, M Haverty, S Kim, R Kotlyar, ...
2012 International Electron Devices Meeting, 8.1. 1-8.1. 4, 2012
962012
Phase stability in nanoscale material systems: extension from bulk phase diagrams
S Bajaj, MG Haverty, R Arróyave, S Shankar
Nanoscale 7 (21), 9868-9877, 2015
932015
Simulation of grain boundary effects on electronic transport in metals, and detailed causes of scattering
B Feldman, S Park, M Haverty, S Shankar, ST Dunham
physica status solidi (b) 247 (7), 1791-1796, 2010
672010
Nanowire structures having wrap-around contacts
SM Cea, CE Weber, PH Keys, S Kim, MG Haverty, S Shankar
US Patent 10,483,385, 2019
512019
Reducing internal film stress in dielectric film
G Kloster, B Boyanov, M Goodner, M Moinpour, M Haverty
US Patent App. 11/096,678, 2006
402006
First-principles study of transition-metal aluminates as high-k gate dielectrics
M Haverty, A Kawamoto, K Cho, R Dutton
Applied physics letters 80 (15), 2669-2671, 2002
372002
Grain-boundary resistance in copper interconnects: from an atomistic model to a neural network
D Valencia, E Wilson, Z Jiang, GA Valencia-Zapata, KC Wang, G Klimeck, ...
Physical review applied 9 (4), 044005, 2018
342018
Density functional theory and beyond—opportunities for quantum methods in materialsmodeling semiconductor technology
S Shankar, H Simka, M Haverty
Journal of Physics: Condensed Matter 20 (6), 064232, 2008
212008
Variability sources and reliability of 3D—FeFETs
M Pešić, B Beltrando, A Padovani, S Gangopadhyay, M Kaliappan, ...
2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021
202021
First principle-based analysis of single-walled carbon nanotube and silicon nanowire junctionless transistors
L Ansari, B Feldman, G Fagas, CM Lacambra, MG Haverty, KJ Kuhn, ...
IEEE transactions on nanotechnology 12 (6), 1075-1081, 2013
152013
Metal interconnect structures for semiconductor devices
H Simka, S Shankar, M Haverty, R Chebiam, F Gstrein
US Patent App. 11/968,139, 2009
142009
Reducing resistivity in metal interconnects by compressive straining
M Haverty, S Shankar, K O'brien, S Park
US Patent App. 11/771,476, 2009
122009
Fundamentals of Cu/barrier-layer adhesion in microelectronic processing
H Simka, S Shankar, C Duran, M Haverty
MRS Online Proceedings Library 863 (1), B9. 2, 2004
122004
Semiconductor device contacts
MG Haverty, S Shankar, T Ghani, S Park
US Patent 9,577,057, 2017
92017
Divacancies in carbon nanotubes and their influence on electron scattering
G Greene-Diniz, SLT Jones, G Fagas, M Haverty, CM Lacambra, ...
Journal of Physics: Condensed Matter 26 (4), 045303, 2014
92014
Effect of structure on electronic properties of the iron-carbon nanotube interface
SLT Jones, G Greene-Diniz, M Haverty, S Shankar, JC Greer
Chemical Physics Letters 615, 11-15, 2014
82014
Liner layers for metal interconnects
HS Simka, DJ Zierath, MG Haverty, S Shankar
US Patent 8,779,589, 2014
82014
Dielectric material having carborane derivatives
M Haverty, T Chen, S Shankar
US Patent App. 11/582,720, 2007
82007
Methods of internal stress reduction in dielectric films with chemical incorporation and structures formed thereby
M Haverty, G Kloster, S Shankar, B Boyanov, M Goodner, M Moinpour
US Patent App. 11/290,409, 2007
82007
Analysis and simulation of interface quality and defect induced variability in MgO spin-transfer torque magnetic RAMs
B Sikder, JH Lim, MA Kumar, A Padovani, M Haverty, U Kamal, ...
IEEE Electron Device Letters 42 (1), 34-37, 2020
72020
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