| Mobility enhancement and abnormal humps in top-gate self-aligned double-layer amorphous InGaZnO TFTs MX Lee, JC Chiu, SL Li, E Sarkar, YC Chen, CC Yen, TL Chen, CH Chou, ... IEEE Journal of the Electron Devices Society 10, 301-308, 2022 | 5 | 2022 |
| First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61mV/dec,Ioff <-7 μA/μm, DIBL =44mV/V, Positive VT, and Process Temp. of 300 °C JC Chiu, E Sarkar, YM Liu, YC Chen, YC Fan, CW Liu 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 4 | 2023 |
| Amorphous Oxide Semiconductors for Monolithic 3D Integrated Circuits S Datta, E Sarkar, K Aabrar, S Deng, J Shin, A Raychowdhury, S Yu, ... 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | 3 | 2024 |
| On the Reliability of High-Performance Dual Gate (DG) W-Doped In2O3 FET KA Aabrar, H Park, SG Kirtania, E Sarkar, MA Al Mamun, S Deng, ... 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | 2 | 2024 |
| Mobility Enhancement of BCE-Type Amorphous InGaZnO TFTs Using Triple-Layer Channels JC Chiu, YM Liu, E Sarkar, YC Chen, YC Fan, CC Yen, TL Chen, ... IEEE Transactions on Electron Devices 70 (8), 4194-4197, 2023 | 1 | 2023 |
| Effects of Deep Trench Isolation Shape and Microlens Radius of Curvature on Optical and Electrical crosstalk in Backside Illuminated CMOS Image Sensors E Sarkar, Y Ma, YC Lee, CW Liu 2023 International VLSI Symposium on Technology, Systems and Applications …, 2023 | 1 | 2023 |
| (Digital Presentation) Negative Bias Illumination Stress on a-Igzo TFT with a Top Barrier JC Chiu, E Sarkar, YM Liu, SL Li, MX Lee, YC Chen, CC Yen, TL Chen, ... Electrochemical Society Meeting Abstracts 242, 1259-1259, 2022 | 1 | 2022 |
| INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF J Chiu, Y Liu, E Sarkar, C Liu US Patent App. 18/447,795, 2025 | | 2025 |
| First Demonstration of High-Performance and Extremely Stable W-Doped In2O3 Gate-All-Around (GAA) Nanosheet FET E Sarkar, C Zhang, D Chakraborty, SG Kirtania, KA Aabrar, H Park, J Shin, ... IEEE Transactions on Electron Devices, 2025 | | 2025 |
| Amorphous Indium Oxide Channel FeFETs with Write Voltage of 0.9V and Endurance >1012 for Refresh-Free 1T-1FeFET Embedded Memory SG Kirtania, O Phadke, E Sarker, KA Aabrar, D Chakraborty, F Waqar, ... 2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024 | | 2024 |
| First Demonstration of W-Doped In2O3 Gate-All-Around (GAA) Nanosheet FET with Improved Performance and Record Threshold Voltage Stability E Sarkar, C Zhang, D Chakraborty, FG Waqar, S Kirtania, KA Aabrar, ... 2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024 | | 2024 |
| Self-Healing Ferroelectric Capacitors with∼ 1000x Endurance Improvement at High Temperatures (85–125° C) N Afroze, A Padovani, J Choi, PG Ravikumar, YH Kuo, C Zhang, T Song, ... 2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024 | | 2024 |
| Photosensor E Sarkar, Y Ma, YC Lee, CW Liu US Patent App. 17/969,663, 2024 | | 2024 |
Chee Wee LiuDistinguished Professor, Department of Electrical Engineering, National Taiwan UniversityAdresă de e-mail confirmată pe ntu.edu.tw