Effect of band-to-band tunneling on junctionless transistors S Gundapaneni, M Bajaj, RK Pandey, KVRM Murali, S Ganguly, ...
IEEE Transactions on Electron Devices 59 (4), 1023-1029, 2012
259 2012 A Tunnel FET for R Asra, M Shrivastava, KVRM Murali, RK Pandey, H Gossner, VR Rao
IEEE Transactions on Electron Devices 58 (7), 1855-1863, 2011
197 2011 Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors A Konar, J Mathew, K Nayak, M Bajaj, RK Pandey, S Dhara, K Murali, ...
Nano letters 15 (3), pp 1684–1690, 2015
69 2015 Trap generation in IL and HK layers during BTI/TDDB stress in scaled HKMG N and P MOSFETs S Mukhopadhyay, K Joshi, V Chaudhary, N Goel, S De, RK Pandey, ...
2014 IEEE International Reliability Physics Symposium, GD. 3.1-GD. 3.11, 2014
52 2014 Selective GeOx -scavenging from interfacial layer on Si1−x Gex channel for high mobility Si/Si1−x Gex CMOS application CH Lee, H Kim, P Jamison, RG Southwick, S Mochizuki, K Watanabe, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
35 2016 Ab initio study of metal grain orientation-dependent work function and its impact on FinFET variability S Agarwal, RK Pandey, JB Johnson, A Dixit, M Bajaj, SS Furkay, ...
IEEE transactions on electron devices 60 (9), 2728-2733, 2013
35 2013 A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs N Goel, S Mukhopadhyay, N Nanaware, S De, RK Pandey, K Murali, ...
2014 IEEE International Reliability Physics Symposium, 6A. 4.1-6A. 4.12, 2014
34 2014 Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices RK Pandey, R Sathiyanarayanan, U Kwon, V Narayanan, KVRM Murali
Journal of Applied Physics 114 (3), 2013
32 2013 Understanding process impact of hole traps and NBTI in HKMG p-MOSFETs using measurements and atomistic simulations S Mahapatra, S De, K Joshi, S Mukhopadhyay, RK Pandey, K Murali
IEEE electron device letters 34 (8), 963-965, 2013
30 2013 Crystallographic-orientation-dependent gate-induced drain leakage in nanoscale MOSFETs RK Pandey, KVRM Murali, SS Furkay, PJ Oldiges, EJ Nowak
IEEE transactions on electron devices 57 (9), 2098-2105, 2010
30 2010 Process optimizations for NBTI/PBTI for future replacement metal gate technologies BP Linder, A Dasgupta, T Ando, E Cartier, U Kwon, R Southwick, M Wang, ...
2016 IEEE International Reliability Physics Symposium (IRPS), 4B-1-1-4B-1-5, 2016
22 2016 Simulation of x-ray absorption near-edge spectra and x-ray fluorescence spectra of optically excited molecules RK Pandey, S Mukamel
The Journal of chemical physics 124 (9), 2006
19 2006 Scaling of Coulomb and exchange-correlation effects with quantum dot size RK Pandey, MK Harbola, VA Singh
Physical Review B 67 (7), 075315, 2003
19 2003 Helium-like donors in semiconductor quantum dots RK Pandey, MK Harbola, VA Singh
Journal of Physics: Condensed Matter 16 (10), 1769, 2004
18 2004 Stable work function for narrow-pitch devices T Ando, M Bajaj, TB Hook, RK Pandey, R Sathiyanarayanan
US Patent 9,583,486, 2017
17 2017 Characterization and Optimization of Charge Trapping in High-k Dielectrics E Cartier, T Ando, M Hopstaken, V Narayanan, R Krishnan, JF Shepard Jr, ...
17 2013 Self-capacitance of a quantum dot: Dependence on the shape of the confining potential V Ranjan, RK Pandey, MK Harbola, VA Singh
Physical Review B 65 (4), 045311, 2002
16 2002 Semiconductor device with a stoichiometric gradient M Bajaj, GW Burr, KVRM Murali, RK Pandey, R Sathiyanarayanan, ...
US Patent 9,589,635, 2017
15 2017 Shallow–deep transitions of neutral and charged donor states in semiconductor quantum dots RK Pandey, MK Harbola, VA Singh
Physical Review B—Condensed Matter and Materials Physics 70 (19), 193308, 2004
15 2004 First-principles investigations of TiGe/Ge interface and recipes to reduce the contact resistance H Dixit, C Niu, M Raymond, V Kamineni, RK Pandey, A Konar, ...
IEEE Transactions on Electron Devices 64 (9), 3775-3780, 2017
14 2017 
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