| Process technology variation KJ Kuhn, MD Giles, D Becher, P Kolar, A Kornfeld, R Kotlyar, ST Ma, ... IEEE Transactions on Electron Devices 58 (8), 2197-2208, 2011 | 480 | 2011 |
| Physics of hole transport in strained silicon MOSFET inversion layers EX Wang, P Matagne, L Shifren, B Obradovic, R Kotlyar, S Cea, M Stettler, ... IEEE Transactions on Electron Devices 53 (8), 1840-1851, 2006 | 177 | 2006 |
| Transistors with high concentration of boron doped germanium AS Murthy, GA Glass, T Ghani, R Pillarisetty, N Mukherjee, JT Kavalieros, ... US Patent 8,901,537, 2014 | 149 | 2014 |
| High mobility strained channels for fin-based transistors SM Cea, AS Murthy, GA Glass, DB Aubertine, T Ghani, JT Kavalieros, ... US Patent 8,847,281, 2014 | 131 | 2014 |
| Past, present and future: SiGe and CMOS transistor scaling KJ Kuhn, A Murthy, R Kotlyar, M Kuhn ECS Transactions 33 (6), 3, 2010 | 113 | 2010 |
| The ultimate CMOS device and beyond KJ Kuhn, U Avci, A Cappellani, MD Giles, M Haverty, S Kim, R Kotlyar, ... 2012 International Electron Devices Meeting, 8.1. 1-8.1. 4, 2012 | 96 | 2012 |
| Energy efficiency comparison of nanowire heterojunction TFET and Si MOSFET at Lg=13nm, including P-TFET and variation considerations UE Avci, DH Morris, S Hasan, R Kotlyar, R Kim, R Rios, DE Nikonov, ... 2013 IEEE International Electron Devices Meeting, 33.4. 1-33.4. 4, 2013 | 93 | 2013 |
| Vertical nanowire transistor with axially engineered semiconductor and gate metallization BS Doyle, R Kotlyar, U Shah, CC Kuo US Patent 8,890,119, 2014 | 69 | 2014 |
| Non-planar device having uniaxially strained semiconductor body and method of making same SM Cea, R Kotlyar, JT Kavalieros, MD Giles, T Ghani, KJ Kuhn, M Kuhn, ... US Patent 8,558,279, 2013 | 63 | 2013 |
| Effects of surface orientation on the performance of idealized III–V thin-body ballistic n-MOSFETs R Kim, T Rakshit, R Kotlyar, S Hasan, CE Weber IEEE electron device letters 32 (6), 746-748, 2011 | 55 | 2011 |
