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Applied Physics Letters 69 (1), 73-75, 1996
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Applied physics letters 67 (15), 2188-2190, 1995
282 1995 Thermal conductivity of GaN crystals in 4.2–300 K range A Jeżowski, BA Danilchenko, M Boćkowski, I Grzegory, S Krukowski, ...
Solid state communications 128 (2-3), 69-73, 2003
232 2003 III–V Nitrides—thermodynamics and crystal growth at high N2 pressure I Grzegory, J Jun, M Boćkowski, M Wroblewski, B Łucznik, S Porowski
Journal of Physics and Chemistry of Solids 56 (3-4), 639-647, 1995
188 1995 Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates K Pakuła, A Wysmołek, KP Korona, JM Baranowski, R Stępniewski, ...
Solid state communications 97 (11), 919-922, 1996
177 1996 Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds M Bockowski, M Iwinska, M Amilusik, M Fijalkowski, B Lucznik, T Sochacki
Semiconductor Science and Technology 31 (9), 093002, 2016
170 2016 Technology of gallium nitride crystal growth D Ehrentraut, E Meissner, M Bockowski
Springer Science & Business Media, 2010
156 2010 Thermal properties of indium nitride S Krukowski, A Witek, J Adamczyk, J Jun, M Bockowski, I Grzegory, ...
Journal of Physics and Chemistry of Solids 59 (3), 289-295, 1998
156 1998 Discovery of ultra-crack-resistant oxide glasses with adaptive networks K Januchta, RE Youngman, A Goel, M Bauchy, SL Logunov, SJ Rzoska, ...
Chemistry of Materials 29 (14), 5865-5876, 2017
147 2017 Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing H Sakurai, M Omori, S Yamada, Y Furukawa, H Suzuki, T Narita, ...
Applied Physics Letters 115 (14), 2019
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Physical Review B—Condensed Matter and Materials Physics 81 (8), 085209, 2010
134 2010 Structure and mechanical properties of compressed sodium aluminosilicate glasses: Role of non-bridging oxygens TK Bechgaard, A Goel, RE Youngman, JC Mauro, SJ Rzoska, ...
Journal of Non-Crystalline Solids 441, 49-57, 2016
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Journal of Applied Physics 128 (5), 2020
123 2020 Optical and magnetic properties of Mn in bulk GaN A Wolos, M Palczewska, M Zajac, J Gosk, M Kaminska, A Twardowski, ...
Physical Review B 69 (11), 115210, 2004
122 2004 Basic ammonothermal growth of Gallium Nitride–State of the art, challenges, perspectives M Zajac, R Kucharski, K Grabianska, A Gwardys-Bak, A Puchalski, ...
Progress in Crystal Growth and Characterization of Materials 64 (3), 63-74, 2018
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Journal of Physics D: Applied Physics 28 (4A), A149, 1995
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Journal of electronic materials 25, 1545-1550, 1996
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Applied Physics Letters 86 (10), 2005
98 2005 Progress on and challenges of p-type formation for GaN power devices T Narita, H Yoshida, K Tomita, K Kataoka, H Sakurai, M Horita, ...
Journal of Applied Physics 128 (9), 2020
93 2020 