Articole cu mandate pentru acces public - Dongliang YangAflați mai multe
Nu sunt disponibile nicăieri: 8
Robust polyethylenimine electrolyte for high performance and thermally stable atomic switch memristors
D Yang, H Yang, X Guo, H Zhang, C Jiao, W Xiao, P Guo, Q Wang, D He
Advanced Functional Materials 30 (50), 2004514, 2020
Mandate: National Natural Science Foundation of China
All‐solid‐state vertical three‐terminal n‐type organic synaptic devices for neuromorphic computing
Z Xie, C Zhuge, Y Zhao, W Xiao, Y Fu, D Yang, S Zhang, Y Li, Q Wang, ...
Advanced Functional Materials 32 (21), 2107314, 2022
Mandate: National Natural Science Foundation of China
High photosensitivity light-controlled planar ZnO artificial synapse for neuromorphic computing
W Xiao, L Shan, H Zhang, Y Fu, Y Zhao, D Yang, C Jiao, G Sun, Q Wang, ...
Nanoscale 13 (4), 2502-2510, 2021
Mandate: National Natural Science Foundation of China
Controlled growth of fine multifilaments in polymer-based memristive devices via the conduction control
H Yang, Z Wang, X Guo, H Su, K Sun, D Yang, W Xiao, Q Wang, D He
ACS applied materials & interfaces 12 (30), 34370-34377, 2020
Mandate: National Natural Science Foundation of China
SiO2/Ta2O5 heterojunction ECM memristors: physical nature of their low voltage operation with high stability and uniformity
X Guo, Q Wang, X Lv, H Yang, K Sun, D Yang, H Zhang, T Hasegawa, ...
Nanoscale 12 (7), 4320-4327, 2020
Mandate: National Natural Science Foundation of China
Constructing van der Waals heterostructures by dry-transfer assembly for novel optoelectronic device
H Li, X Xiong, F Hui, D Yang, J Jiang, W Feng, J Han, J Duan, Z Wang, ...
Nanotechnology 33 (46), 465601, 2022
Mandate: National Natural Science Foundation of China, Research Grants Council, Hong Kong
Oscillatory neural network-based Ising machine using 2D memristors
X Chen, D Yang, G Hwang, Y Dong, B Cui, D Wang, H Chen, N Lin, ...
ACS nano 18 (16), 10758-10767, 2024
Mandate: Research Grants Council, Hong Kong
Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices
C Su, L Shan, D Yang, Y Zhao, Y Fu, J Liu, G Zhang, Q Wang, D He
Microelectronic Engineering 247, 111600, 2021
Mandate: National Natural Science Foundation of China
Disponibile undeva: 3
2D materials and van der Waals heterojunctions for neuromorphic computing
Z Zhang, D Yang, H Li, C Li, Z Wang, L Sun, H Yang
Neuromorphic Computing and Engineering 2 (3), 032004, 2022
Mandate: National Natural Science Foundation of China, Research Grants Council, Hong Kong
Van der Waals materials-based floating gate memory for neuromorphic computing
Q Zhang, Z Zhang, C Li, R Xu, D Yang, L Sun
Chip 2 (4), 100059, 2023
Mandate: National Natural Science Foundation of China
Probing switching mechanism of memristor for neuromorphic computing
Z Yang, Z Zhang, C Li, D Yang, F Hui, L Sun
Nano Express 4 (2), 022001, 2023
Mandate: National Natural Science Foundation of China
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