| Contact engineering for 2D materials and devices DS Schulman, AJ Arnold, S Das Chemical Society Reviews 47 (9), 3037-3058, 2018 | 807 | 2018 |
| Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors AJ Arnold, A Razavieh, JR Nasr, DS Schulman, CM Eichfeld, S Das ACS nano 11 (3), 3110-3118, 2017 | 282 | 2017 |
| Carbon doping of WS2 monolayers: Bandgap reduction and p-type doping transport F Zhang, Y Lu, DS Schulman, T Zhang, K Fujisawa, Z Lin, Y Lei, AL Elias, ... Science advances 5 (5), eaav5003, 2019 | 182 | 2019 |
| Defect-Controlled Nucleation and Orientation of WSe2 on hBN: A Route to Single-Crystal Epitaxial Monolayers X Zhang, F Zhang, Y Wang, DS Schulman, T Zhang, A Bansal, N Alem, ... ACS nano 13 (3), 3341-3352, 2019 | 151 | 2019 |
| Defect Dynamics in 2-D MoS2 Probed by Using Machine Learning, Atomistic Simulations, and High-Resolution Microscopy TK Patra, F Zhang, DS Schulman, H Chan, MJ Cherukara, M Terrones, ... ACS nano 12 (8), 8006-8016, 2018 | 90 | 2018 |
| Mobility deception in nanoscale transistors: an untold contact story JR Nasr, DS Schulman, A Sebastian, MW Horn, S Das Advanced Materials 31 (2), 1806020, 2019 | 88 | 2019 |
| Thickness trends of electron and hole conduction and contact carrier injection in surface charge transfer doped 2D field effect transistors AJ Arnold, DS Schulman, S Das ACS nano 14 (10), 13557-13568, 2020 | 56 | 2020 |
| Superior electro-oxidation and corrosion resistance of monolayer transition metal disulfides DS Schulman, D May-Rawding, F Zhang, D Buzzell, N Alem, S Das ACS applied materials & interfaces 10 (4), 4285-4294, 2018 | 38 | 2018 |
| The prospect of two-dimensional heterostructures: a review of recent breakthroughs DS Schulman, AJ Arnold, A Razavieh, J Nasr, S Das IEEE Nanotechnology Magazine 11 (2), 6-17, 2017 | 37 | 2017 |
| Facile electrochemical synthesis of 2D monolayers for high-performance thin-film transistors DS Schulman, A Sebastian, D Buzzell, YT Huang, AJ Arnold, S Das ACS applied materials & interfaces 9 (51), 44617-44624, 2017 | 32 | 2017 |
| Anomalous corrosion of bulk transition metal diselenides leading to stable monolayers YT Huang, A Dodda, DS Schulman, A Sebastian, F Zhang, D Buzzell, ... ACS Applied Materials & Interfaces 9 (44), 39059-39068, 2017 | 17 | 2017 |
| Three-Dimensional Integrated X-ray Diffraction Imaging of a Native Strain in Multi-Layered WSe2 MJ Cherukara, DS Schulmann, K Sasikumar, AJ Arnold, H Chan, ... Nano letters 18 (3), 1993-2000, 2018 | 10 | 2018 |
| 2-D strain FET (2D-SFET) based SRAMs—Part I: Device-circuit interactions N Thakuria, D Schulman, S Das, SK Gupta IEEE Transactions on Electron Devices 67 (11), 4866-4874, 2020 | 6 | 2020 |
| Polarization-induced strain-coupled TMD FETs (PS FETs) for non-volatile memory applications N Thakuria, AK Saha, SK Thirumala, D Schulman, S Das, SK Gupta 2020 Device Research Conference (DRC), 1-2, 2020 | 6 | 2020 |
| Contact, interface, and strain engineering of two-dimensional transition metal dichalcogenide field effect transistors DS Schulman The Pennsylvania State University, 2019 | 5 | 2019 |
| 2D strain FET (2D-SFET)-based SRAMs—Part II: Back voltage-enabled designs N Thakuria, D Schulman, S Das, SK Gupta IEEE Transactions on Electron Devices 67 (11), 4875-4883, 2020 | 4 | 2020 |
| 2-transistor schmitt trigger based on 2D electrostrictive field effect transistors N Thakuria, D Schulmarr, S Das, SK Gupta 2018 76th Device Research Conference (DRC), 1-2, 2018 | 4 | 2018 |
| Steep slope 2D strain field effect transistor: 2D-SFET D Schulman, A Arnold, S Das 2018 International Symposium on VLSI Technology, Systems and Application …, 2018 | 4 | 2018 |
| Titanium dioxide nanowire sensor array integration on CMOS platform using deterministic assembly OZ Gall, X Zhong, DS Schulman, M Kang, A Razavieh, TS Mayer Nanotechnology 28 (26), 265501, 2017 | 4 | 2017 |
Saptarshi DasAckley Professor of Engineering, Pennsylvania State UniversityAdresă de e-mail confirmată pe psu.edu