Shahriar Memaran

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	Toate	Din 2020
Referințe bibliografice	1611	966
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Luis BalicasNational High Magnetic Field Lab/Florida State UniversityAdresă de e-mail confirmată pe magnet.fsu.edu
Nihar PradhanAssociate Professor of Physics, Jackson State UniversityAdresă de e-mail confirmată pe jsums.edu
Daniel RhodesUniversity of Wisconsin - MadisonAdresă de e-mail confirmată pe wisc.edu
Ajayan PMProfessor of Materials Science and NanoEngineering, Rice UniversityAdresă de e-mail confirmată pe rice.edu
Mauricio TerronesEvan Pugh University Professor (Physics), Penn StateAdresă de e-mail confirmată pe psu.edu
Simin Feng (冯思敏）Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CASAdresă de e-mail confirmată pe sinano.ac.cn
Humberto Rodriguez GutierrezAssociate Professor, Department of Physics, University of South Florida, TampaAdresă de e-mail confirmată pe usf.edu
Jonathan LudwigimecAdresă de e-mail confirmată pe imec.be
Jean-Marie Poumirolchargé de recherche, CEMES-CNRSAdresă de e-mail confirmată pe cemes.fr
Nestor PereaThe Pennsylvania State UniversityAdresă de e-mail confirmată pe psu.edu
Saikat TalapatraSouthern Illinois University CarbondaleAdresă de e-mail confirmată pe siu.edu
Francisco J. Garcia-VidalCondensed Matter Physics Center (IFIMAC). Universidad Autonoma de Madrid, Madrid (Spain)Adresă de e-mail confirmată pe uam.es
Antonio I. Fernández-DomínguezProfesor Titular, Universidad Autónoma de MadridAdresă de e-mail confirmată pe uam.es
Ana Laura EliasDepartment of Physics, Applied Physics and Astronomy, Binghamton UniversityAdresă de e-mail confirmată pe binghamton.edu
M. Zahid HasanEugene Higgins Professor of Physics, Princeton University; Investigator, Lawrence Berkeley LabAdresă de e-mail confirmată pe princeton.edu
Kuan-Wen Chen (陳冠文）University of MichiganAdresă de e-mail confirmată pe umich.edu
Nasser AlidoustQuantum Research Scientist, Amazon Web Services (AWS) Center for Quantum ComputingAdresă de e-mail confirmată pe amazon.com

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Shahriar Memaran

National High Magnetic Field Laboratory

Adresă de e-mail confirmată pe magnet.fsu.edu - Pagina de pornire

Condensed Matter Physics Nano-Technology 2-D materials Semiconductors


Titlu Sortați după descrierea bibliografică Sortați după an Sortați după titlu	Citat de Citat de	Anul
One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy PK Sahoo, S Memaran, Y Xin, L Balicas, HR Gutiérrez Nature 553, 63-67, 2018	526	2018
Field-Effect Transistors Based on Few-Layered α-MoTe₂ NR Pradhan, D Rhodes, S Feng, Y Xin, S Memaran, BH Moon, ... ACS nano 8 (6), 5911-5920, 2014	399	2014
Hall and field-effect mobilities in few layered p-WSe₂ field-effect transistors NR Pradhan, D Rhodes, S Memaran, JM Poumirol, D Smirnov, ... Scientific reports 5 (1), 8979, 2015	166	2015
Ambipolar molybdenum diselenide field-effect transistors: field-effect and hall mobilities NR Pradhan, D Rhodes, Y Xin, S Memaran, L Bhaskaran, M Siddiq, S Hill, ... ACS nano 8 (8), 7923-7929, 2014	164	2014
Pronounced photovoltaic response from multilayered transition-metal dichalcogenides PN-junctions S Memaran, NR Pradhan, Z Lu, D Rhodes, J Ludwig, Q Zhou, O Ogunsolu, ... Nano letters 15 (11), 7532–7538, 2015	119	2015
Bilayer lateral heterostructures of transition-metal dichalcogenides and their optoelectronic response PK Sahoo, S Memaran, FA Nugera, Y Xin, T Díaz Márquez, Z Lu, ... ACS nano 13 (11), 12372-12384, 2019	116	2019
Layer-and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor D Shcherbakov, P Stepanov, S Memaran, Y Wang, Y Xin, J Yang, K Wei, ... Science Advances 7 (5), eabe2892, 2021	31	2021
Phase Modulators Based on High Mobility Ambipolar ReSe₂ Field-Effect Transistors NR Pradhan, C Garcia, B Isenberg, D Rhodes, S Feng, S Memaran, Y Xin, ... Scientific reports 8 (1), 12745, 2018	29	2018
Possible manifestations of the chiral anomaly and evidence for a magnetic field induced topological phase transition in the type-I Weyl semimetal TaAs QR Zhang, B Zeng, YC Chiu, R Schönemann, S Memaran, W Zheng, ... Physical Review B 100 (11), 115138, 2019	22	2019
Uncovering the behavior of Hf2Te2P and the candidate Dirac metal Zr2Te2P KW Chen, S Das, D Rhodes, S Memaran, T Besara, T Siegrist, ... Journal of Physics: Condensed Matter 28 (14), 14LT01, 2016	16	2016
Light sources with bias tunable spectrum based on van der Waals interface transistors H Henck, D Mauro, D Domaretskiy, M Philippi, S Memaran, W Zheng, Z Lu, ... Nature Communications 13 (1), 3917, 2022	8	2022
Thickness-and twist-angle-dependent interlayer excitons in metal monochalcogenide heterostructures W Zheng, L Xiang, FA De Quesada, M Augustin, Z Lu, M Wilson, A Sood, ... ACS nano 16 (11), 18695-18707, 2022	6	2022
Sequential Edge-Epitaxy in 2D Lateral Heterostructures PK Sahoo, S Memaran, Y Xin, L Balicas, HR Gutiérrez arXiv preprint arXiv:1706.07014, 2017	4	2017
Pronounced photovoltaic response from PN-junctions of multi-layered MoSe_2 on h-BN S Memaran, NR Pradhan, Z Lu, D Rhodes, J Ludwig, Q Zhou, P Ajayan, ... arXiv preprint arXiv:1411.2086, 2014	2	2014
Giant Tunability of Intersubband Transitions and Quantum Hall Quartets in Few-Layer InSe Quantum Wells D Shcherbakov, G Voigt, S Memaran, GB Liu, Q Wang, K Watanabe, ... Nano Letters 24 (13), 3851-3857, 2024	1	2024
Quantum Hall effect in a two-dimensional semiconductor with large spin-orbit coupling D Shcherbakov, J Yang, S Memaran, K Watanabe, T Taniguchi, ... Physical Review B 106 (4), 045307, 2022	1	2022
Lateral PN Junctions Based on 2-D Materials S Memaran	1	2018
Thickness and twist angle tunable moiré excitons in InSe/GaSe heterostructures W Zheng, L Xiang, FAD Quesada, M Augustin, Z Lu, A Sood, F Wu, ... APS March Meeting Abstracts 2022, D57. 007, 2022		2022
Emergence of second electronic subband in ultrathin InSe. D Shcherbakov, G Voigt, S Memaran, K Watanabe, T Taniguchi, L Balicas, ... APS March Meeting Abstracts 2022, F55. 003, 2022		2022
Van der Waals Interface Transistors as Light Sources with Bias Tunable Spectrum H Henck, D Mauro, D Domaretskiy, M Philippi, S Memaran, W Zheng, Z Lu, ... arxiv, 2022		2022

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