Excess avalanche noise in In0. 52Al0. 48As YL Goh, ARJ MARSHALL, DJ Massey, JS Ng, CH Tan, M Hopkinson
IEEE journal of quantum electronics 43 (5-6), 503-507, 2007
104 2007 Temperature dependence of avalanche breakdown in InP and InAlAs LJJ Tan, DSG Ong, JS Ng, CH Tan, SK Jones, Y Qian, JPR David
IEEE Journal of Quantum Electronics 46 (8), 1153-1157, 2010
102 2010 Extremely low excess noise and high sensitivity AlAs0.56 Sb0.44 avalanche photodiodes X Yi, S Xie, B Liang, LW Lim, JS Cheong, MC Debnath, DL Huffaker, ...
Nature Photonics 13 (10), 683-686, 2019
97 2019 Avalanche multiplication in InAlAs YL Goh, DJ Massey, ARJ Marshall, JS Ng, CH Tan, WK Ng, GJ Rees, ...
IEEE Transactions on Electron Devices 54 (1), 11-16, 2006
86 2006 Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes ARJ Marshall, CH Tan, MJ Steer, JPR David
Applied Physics Letters 93 (11), 2008
85 2008 Avalanche noise characteristics in submicron InP diodes LJJ Tan, JS Ng, CH Tan, JPR David
IEEE Journal of Quantum Electronics 44 (4), 378-382, 2008
84 2008 Single-photon detection for long-range imaging and sensing RH Hadfield, J Leach, F Fleming, DJ Paul, CH Tan, JS Ng, RK Henderson, ...
Optica 10 (9), 1124-1141, 2023
79 2023 Avalanche noise measurement in thin Si CH Tan, JC Clark, JPR David, GJ Rees, SA Plimmer, RC Tozer, ...
Applied Physics Letters 76 (26), 3926-3928, 2000
74 2000 Material considerations for avalanche photodiodes JPR David, CH Tan
IEEE Journal of selected topics in quantum electronics 14 (4), 998-1009, 2008
73 2008 Impact ionization in InAs electron avalanche photodiodes ARJ Marshall, JPR David, CH Tan
IEEE Transactions on Electron Devices 57 (10), 2631-2638, 2010
68 2010 Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As JS Ng, CH Tan, JPR David, G Hill, GJ Rees
IEEE Transactions on Electron Devices 50 (4), 901-905, 2003
65 2003 Extremely low excess noise in InAs electron avalanche photodiodes ARJ Marshall, CH Tan, MJ Steer, JPR David
IEEE Photonics Technology Letters 21 (13), 866-868, 2009
63 2009 Temperature dependence of leakage current in InAs avalanche photodiodes PJ Ker, ARJ Marshall, AB Krysa, JPR David, CH Tan
IEEE Journal of quantum electronics 47 (8), 1123-1128, 2011
61 2011 InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000 C Q Lu, X Zhou, A Krysa, A Marshall, P Carrington, CH Tan, A Krier
Solar Energy Materials and Solar Cells 179, 334-338, 2018
60 2018 Effect of dead space on avalanche speed [APDs] JS Ng, CH Tan, BK Ng, PJ Hambleton, JPR David, GJ Rees, AH You, ...
IEEE Transactions on Electron Devices 49 (4), 544-549, 2002
59 2002 Excess noise measurement in avalanche photodiodes using a transimpedance amplifier front-end KS Lau, CH Tan, BK Ng, KF Li, RC Tozer, JPR David, GJ Rees
Measurement science and technology 17 (7), 1941, 2006
58 2006 High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit ARJ Marshall, PJ Ker, A Krysa, JPR David, CH Tan
Optics express 19 (23), 23341-23349, 2011
57 2011 Demonstration of InAsBi photoresponse beyond 3.5 μm IC Sandall, F Bastiman, B White, R Richards, D Mendes, JPR David, ...
Applied Physics Letters 104 (17), 2014
56 2014 Low multiplication noise thin Al/sub 0.6/Ga/sub 0.4/As avalanche photodiodes CH Tan, JPR David, SA Plimmer, GJ Rees, RC Tozer, R Grey
IEEE Transactions on Electron Devices 48 (7), 1310-1317, 2001
56 2001 InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product S Xie, X Zhou, S Zhang, DJ Thomson, X Chen, GT Reed, JS Ng, CH Tan
Optics express 24 (21), 24242-24247, 2016
53 2016