E A Fitzgerald

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Minjoo Larry LeeProfessor of electrical and computer engineering, University of Illinois Urbana-ChampaignAdresă de e-mail confirmată pe illinois.edu
Ya-Hong XieUniversity of California Los Angeles, Materials Sciences & EngineeringAdresă de e-mail confirmată pe ucla.edu
Steven RingelThe Ohio State UniversityAdresă de e-mail confirmată pe osu.edu
Anthony LochtefeldCEO, AmberWave Inc.Adresă de e-mail confirmată pe amberwave.com
CHUA Soo JinNationa University of SingaporeAdresă de e-mail confirmată pe nus.edu.sg
Kwang Hong Lee, KH LeeNanyang Technological University, Singapore-Mit alliance for research and technologyAdresă de e-mail confirmată pe smart.mit.edu
Chuan Seng TanProfessor, Nanyang Technological University, Singapore | IEEE Fellow | IMAPS FellowAdresă de e-mail confirmată pe ntu.edu.sg
Jurgen MichelMassachusetts Institute of TechnologyAdresă de e-mail confirmată pe mit.edu
Shuyu BaoSingapore-MIT Alliance for Research and TechnologyAdresă de e-mail confirmată pe smart.mit.edu
KL PEYProfessor, Singapore University of Technology and DesignAdresă de e-mail confirmată pe sutd.edu.sg
Don MonroeFreelance science writerAdresă de e-mail confirmată pe DonMonroe.info
Bonnie WeirBroadcom, Inc.Adresă de e-mail confirmată pe broadcom.com
Carl DohrmanSystems and Technology Research, Inc.Adresă de e-mail confirmată pe alum.mit.edu
David WiltAir ForceAdresă de e-mail confirmată pe us.af.mil
Christopher HeidelbergerMIT Lincoln LaboratoryAdresă de e-mail confirmată pe ll.mit.edu
Loke Wan KhaiNational University of SingaporeAdresă de e-mail confirmată pe nus.edu.sg
Zhang LiSingapore-MIT Alliance for Research and TechnologyAdresă de e-mail confirmată pe smart.mit.edu
Andrew Y. KimLumiledsAdresă de e-mail confirmată pe alum.mit.edu
WK ChimNational University of SingaporeAdresă de e-mail confirmată pe nus.edu.sg
Adam Jandl, Ph.D.Process Engineer, Lam ResearchAdresă de e-mail confirmată pe mit.edu

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E A Fitzgerald

Cornell, ATT, MIT, Massachusetts Institute of Technology, NTU

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Materials Electrical Engineering Physics Innovation


Titlu Sortați după descrierea bibliografică Sortați după an Sortați după titlu	Citat de Citat de	Anul
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors ML Lee, EA Fitzgerald, MT Bulsara, MT Currie, A Lochtefeld Journal of applied physics 97 (1), 2005	1329	2005
Totally relaxed Ge_xSi_1−x layers with low threading dislocation densities grown on Si substrates EA Fitzgerald, YH Xie, ML Green, D Brasen, AR Kortan, J Michel, YJ Mii, ... Applied physics letters 59 (7), 811-813, 1991	936	1991
Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing MT Currie, SB Samavedam, TA Langdo, CW Leitz, EA Fitzgerald Applied physics letters 72 (14), 1718-1720, 1998	773	1998
Dislocations in strained-layer epitaxy: theory, experiment, and applications EA Fitzgerald Materials science reports 7 (3), 87-142, 1991	744	1991
Coherent phonon heat conduction in superlattices MN Luckyanova, J Garg, K Esfarjani, A Jandl, MT Bulsara, AJ Schmidt, ... Science 338 (6109), 936-939, 2012	696	2012
Relaxed Ge_xSi_1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si EA Fitzgerald, YH Xie, D Monroe, PJ Silverman, JM Kuo, AR Kortan, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992	686	1992
Remote epitaxy through graphene enables two-dimensional material-based layer transfer Y Kim, SS Cruz, K Lee, BO Alawode, C Choi, Y Song, JM Johnson, ... Nature 544 (7650), 340-343, 2017	591	2017
Impurity enhancement of the 1.54‐μm Er³⁺ luminescence in silicon J Michel, JL Benton, RF Ferrante, DC Jacobson, DJ Eaglesham, ... Journal of applied physics 70 (5), 2672-2678, 1991	584	1991
Strained-semiconductor-on-insulator device structures TA Langdo, MT Currie, R Hammond, AJ Lochtefeld, EA Fitzgerald US Patent 6,995,430, 2006	544	2006
Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same M Currie, A Lochtefeld, R Hammond, E Fitzgerald US Patent 6,831,292, 2004	504	2004
Methods of forming strained-semiconductor-on-insulator finFET device structures AJ Lochtefeld, TA Langdo, R Hammond, MT Currie, G Braithwaite, ... US Patent 7,074,623, 2006	435*	2006
Luminescence and structural study of porous silicon films YH Xie, WL Wilson, FM Ross, JA Mucha, EA Fitzgerald, JM Macaulay, ... Journal of applied physics 71 (5), 2403-2407, 1992	426	1992
Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area EA Fitzgerald, GP Watson, RE Proano, DG Ast, PD Kirchner, GD Pettit, ... Journal of Applied Physics 65 (6), 2220-2237, 1989	396	1989
Strained silicon MOSFET technology JL Hoyt, HM Nayfeh, S Eguchi, I Aberg, G Xia, T Drake, EA Fitzgerald, ... Digest. International Electron Devices Meeting,, 23-26, 2002	386	2002
Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers ME Groenert, CW Leitz, AJ Pitera, V Yang, H Lee, RJ Ram, EA Fitzgerald Journal of applied physics 93 (1), 362-367, 2003	361	2003
Extremely high electron mobility in Si/Ge_xSi_1−x structures grown by molecular beam epitaxy YJ Mii, YH Xie, EA Fitzgerald, D Monroe, FA Thiel, BE Weir, LC Feldman Applied Physics Letters 59 (13), 1611-1613, 1991	360	1991
Monolithically integrated light emitting devices EA Fitzgerald US Patent 7,535,089, 2009	348	2009
Semiconductor surface roughness: Dependence on sign and magnitude of bulk strain YH Xie, GH Gilmer, C Roland, PJ Silverman, SK Buratto, JY Cheng, ... Physical Review Letters 73 (22), 3006, 1994	339	1994
Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates MT Currie, CW Leitz, TA Langdo, G Taraschi, EA Fitzgerald, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001	325	2001
High quality Ge on Si by epitaxial necking TA Langdo, CW Leitz, MT Currie, EA Fitzgerald, A Lochtefeld, ... Applied Physics Letters 76 (25), 3700-3702, 2000	316	2000

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