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Ehren Mannebach
Ehren Mannebach
Adresă de e-mail confirmată pe stanford.edu
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Anul
An ultrafast symmetry switch in a Weyl semimetal
EJ Sie, CM Nyby, CD Pemmaraju, SJ Park, X Shen, J Yang, MC Hoffmann, ...
Nature 565 (7737), 61-66, 2019
4632019
Engineering the Structural and Electronic Phases of MoTe2 through W Substitution
D Rhodes, DA Chenet, BE Janicek, C Nyby, Y Lin, W Jin, D Edelberg, ...
Nano letters 17 (3), 1616-1622, 2017
1692017
Dynamic Structural Response and Deformations of Monolayer MoS2 Visualized by Femtosecond Electron Diffraction
EM Mannebach, R Li, KA Duerloo, C Nyby, P Zalden, T Vecchione, ...
Nano letters 15 (10), 6889-6895, 2015
1192015
3-D self-aligned stacked NMOS-on-PMOS nanoribbon transistors for continued Moore’s law scaling
CY Huang, G Dewey, E Mannebach, A Phan, P Morrow, W Rachmady, ...
2020 IEEE International Electron Devices Meeting (IEDM), 20.6. 1-20.6. 4, 2020
1062020
Ultrafast Electronic and Structural Response of Monolayer MoS2 under Intense Photoexcitation Conditions
EM Mannebach, KAN Duerloo, LA Pellouchoud, MJ Sher, S Nah, YH Kuo, ...
ACS nano 8 (10), 10734-10742, 2014
692014
High Hole Mobility and Thickness‐Dependent Crystal Structure in α, ω‐Dihexylsexithiophene Single‐Monolayer Field‐Effect Transistors
EM Mannebach, JW Spalenka, PS Johnson, Z Cai, FJ Himpsel, PG Evans
Advanced Functional Materials 23 (5), 554-564, 2013
642013
Backside contacts for semiconductor devices
AD Lilak, E Mannebach, A Phan, RE Schenker, SA Bojarski, W Rachmady, ...
US Patent 11,437,283, 2022
592022
Dynamic optical tuning of interlayer interactions in the transition metal dichalcogenides
EM Mannebach, C Nyby, F Ernst, Y Zhou, J Tolsma, Y Li, MJ Sher, ...
Nano Letters 17 (12), 7761-7766, 2017
592017
Anisotropic structural dynamics of monolayer crystals revealed by femtosecond surface X-ray scattering
IC Tung, A Krishnamoorthy, S Sadasivam, H Zhou, Q Zhang, KL Seyler, ...
Nature Photonics 13 (6), 425-430, 2019
352019
Gate-all-around integrated circuit structures having depopulated channel structures using multiple bottom-up oxidation approaches
E Mannebach, A Phan, A Lilak, W Rachmady, G Dewey, CY Huang, ...
US Patent 11,764,263, 2023
252023
A terahertz pump mega-electron-volt ultrafast electron diffraction probe apparatus at the SLAC Accelerator Structure Test Area facility
BK Ofori-Okai, MC Hoffmann, AH Reid, S Edstrom, RK Jobe, RK Li, ...
Journal of Instrumentation 13 (06), P06014, 2018
212018
Visualizing energy transfer at buried interfaces in layered materials using picosecond X‐rays
C Nyby, A Sood, P Zalden, AJ Gabourie, P Muscher, D Rhodes, ...
Advanced Functional Materials 30 (34), 2002282, 2020
202020
Stacked transistors with dielectric between source/drain materials of different strata
W Rachmady, CY Huang, E Mannebach, A Phan, CSC Barrett, JP Gupta, ...
US Patent App. 16/355,623, 2020
182020
Interconnect techniques for electrically connecting source/drain regions of stacked transistors
AD Lilak, G Dewey, CY Huang, C Jezewski, E Mannebach, R Mehandru, ...
US Patent 11,742,346, 2023
162023
Contact resistance reduction in transistor devices with metallization on both sides
K Ganguly, R Keech, S Rafique, GA Glass, AS Murthy, E Mannebach, ...
US Patent App. 16/911,771, 2021
162021
Gate-all-around integrated circuit structures having depopulated channel structures using bottom-up oxidation approach
W Rachmady, G Dewey, JT Kavalieros, A Lilak, P Morrow, A Phan, ...
US Patent 11,830,933, 2023
152023
Chiu
D Rhodes, DA Chenet, BE Janicek, C Nyby, Y Lin, W Jin, D Edelberg, ...
Y. c, 1616-1622, 2017
112017
Novel cell architectures with back-side transistor contacts for scaling and performance
M Kobrinsky, JD Silva, E Mannebach, S Mills, M Abd El Qader, ...
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
92023
Three dimensional integrated circuits with stacked transistors
CY Huang, W Rachmady, G Dewey, A Lilak, K Jun, B Mueller, ...
US Patent 11,605,565, 2023
82023
Vertical memory cells
A Lilak, W Rachmady, G Dewey, K Jun, HJ Yoo, P Morrow, ST Ma, P Ahn, ...
US Patent 11,569,238, 2023
82023
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