Thomas Kämpfe

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	Toate	Din 2020
Referințe bibliografice	4327	4061
h-index	31	31
i10-index	103	98

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Kai NiUniversity of Notre DameAdresă de e-mail confirmată pe nd.edu
Xunzhao YinZhejiang UniversityAdresă de e-mail confirmată pe zju.edu.cn
Sven BeyerGlobalfoundriesAdresă de e-mail confirmată pe globalfoundries.com
Gerald GerlachTU DresdenAdresă de e-mail confirmată pe tu-dresden.de
Mohsen ImaniAssistant Professor, University of California IrvineAdresă de e-mail confirmată pe uci.edu
Norbert WehnUniversity of KaiserslauternAdresă de e-mail confirmată pe eit.uni-kl.de
Xiaobo Sharon HuUniversity of Notre Dame, Department of Computer Science and EngineeringAdresă de e-mail confirmată pe nd.edu
Jan Van Houdtimec Fellow, Physics professor at KU Leuven, IEEE FellowAdresă de e-mail confirmată pe imec.be
Tian-Li Wu 吳添立National Yang Ming Chiao Tung University; NYCU WLabAdresă de e-mail confirmată pe nycu.edu.tw
Darsen LuNCKUAdresă de e-mail confirmată pe cal.berkeley.edu
Xueqing LiAssociate Professor, Tsinghua UniversityAdresă de e-mail confirmată pe tsinghua.edu.cn
Xiao GongNational University of SingaporeAdresă de e-mail confirmată pe nus.edu.sg
Yiyu ShiFull Professor, University of Notre DameAdresă de e-mail confirmată pe nd.edu
Hussam AmrouchProfessor (W3) of AI Processor Design, Technical University of MunichAdresă de e-mail confirmată pe tum.de
Yogesh S. ChauhanFellow IEEE, FNAE, Professor-IIT KanpurAdresă de e-mail confirmată pe iitk.ac.in
Vijaykrishnan NarayananRobert Noll Chair Professor at The Pennsylvania State UniversityAdresă de e-mail confirmată pe cse.psu.edu
Dr. Manan SuriIndian Institute of Technology - DelhiAdresă de e-mail confirmată pe ee.iitd.ac.in
Lambert AlffTU DarmstadtAdresă de e-mail confirmată pe tu-darmstadt.de
Suman DattaJoseph M. Pettit Chair ProfessorAdresă de e-mail confirmată pe gatech.edu
Thomas MikolajickScientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU DresdenAdresă de e-mail confirmată pe namlab.com

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Thomas Kämpfe

TU Braunschweig | Fraunhofer IPMS - Center Nanoelectronic Technologies

Adresă de e-mail confirmată pe tu-braunschweig.de - Pagina de pornire

electron devices nonvolatile memories neuromorphic computing in-memory computing microwave


Titlu Sortați după descrierea bibliografică Sortați după an Sortați după titlu	Citat de Citat de	Anul
High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty T Ali, P Polakowski, S Riedel, T Büttner, T Kämpfe, M Rudolph, B Pätzold, ... IEEE Transactions on Electron Devices 65 (9), 3769 - 3774, 2018	272	2018
FeFET: A versatile CMOS compatible device with game-changing potential S Beyer, S Dünkel, M Trentzsch, J Müller, A Hellmich, D Utess, J Paul, ... 2020 IEEE International Memory Workshop (IMW), 1-4, 2020	160	2020
A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage T Ali, P Polakowski, K Kühnel, M Czernohorsky, T Kämpfe, D Lehninger, ... 2019 IEEE International Electron Device Meeting (IEDM), 28.7 .1 - 28.7 .4, 2020	137	2020
Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics T Ali, P Polakowski, S Riedel, T Büttner, T Kämpfe, M Rudolph, B Pätzold, ... Applied Physics Letters 112 (222903), 2018	135	2018
Enhancing the Domain Wall Conductivity in Lithium Niobate Single Crystals C Godau, T Kämpfe, A Thiessen, LM Eng, A Haußmann ACS Nano 11 (5), 4816-4824, 2017	133	2017
Optical three-dimensional profiling of charged domain walls in ferroelectrics by Cherenkov second-harmonic generation T Kämpfe, P Reichenbach, M Schröder, A Haußmann, LM Eng, T Woike, ... Physical Review B 89 (3), 035314, 2014	121	2014
Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD M Lederer, T Kämpfe, R Olivo, D Lehninger, C Mart, S Kirbach, T Ali, ... Applied Physics Letters 115 (22), 222902, 2019	120	2019
Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation D Lehninger, R Olivo, T Ali, M Lederer, T Kämpfe, C Mart, K Biedermann, ... physica status solidi (a) 217 (8), 2070030, 2020	115	2020
Ultra Low Power Flexible Precision FeFET based Analog In-memory Computing T Soliman, F Müller, T Kirchner, T Hoffmann, H Ganem, E Karimov, T Ali, ... 2020 IEEE International Electron Device Meeting (IEDM), 29.2.1 - 29.2.4, 2021	113	2021
On the Origin of Wake‐Up and Antiferroelectric‐Like behavior in Ferroelectric Hafnium Oxide M Lederer, R Olivo, D Lehninger, S Abdulazhanov, T Kämpfe, S Kirbach, ... physica status solidi (RRL) - Rapid Research Letters 15 (5), 2021	106	2021
Ferroelectric field effect transistors as a synapse for neuromorphic application M Lederer, T Kämpfe, T Ali, F Müller, R Olivo, R Hoffmann, N Laleni, ... IEEE Transactions on Electron Devices 68 (5), 2295-2300, 2021	90	2021
A Scalable Design of Multi-Bit Ferroelectric Content Addressable Memory for Data-Centric Computing C Li, F Müller, T Ali, R Olivo, M Imani, S Deng, C Zhuo, T Kämpfe, X Yin, ... 2020 IEEE International Electron Device Meeting (IEDM), 29.3.1 - 29.3.4, 2021	84	2021
Layer thickness scaling and wake-up effect of pyroelectric response in Si-doped HfO2 C Mart, T Kämpfe, S Zybell, W Weinreich Applied Physics Letters 112 (5), 052905, 2018	73	2018
Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction M Lederer, T Kämpfe, N Vogel, D Utess, B Volkmann, T Ali, R Olivo, ... Nanomaterials 10 (2), 384, 2020	66	2020
Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO2 thin films C Mart, K Kühnel, T Kämpfe, S Zybell, W Weinreich Applied Physics Letters 114 (10), 102903, 2019	65	2019
Random and Systematic Variation in Nanoscale Hf0.5Zr0.5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications S De, A Baig, BH Qiu, F Müller, HH Le, M Lederer, T Kämpfe, T Ali, ... Frontiers in Nanotechnology, 2022	49	2022
FeFET Multi-Bit Content-Addressable Memories for In-Memory Nearest Neighbor Search A Kazemi, MM Sharifi, AF Laguna, F Müller, X Yin, T Kämpfe, M Niemier, ... IEEE Transactions on Computers 71 (10), 2565 - 2576, 2021	47	2021
In-Memory Nearest Neighbor Search with FeFET Multi-Bit Content-Addressable Memories A Kazemi, MM Sharifi, AF Balon Laguna, F Müller, R Rajaei, R Olivo, ... Design, Automation & Test in Europe (DATE) 2021, 2021	47	2021
Real-time three-dimensional profiling of ferroelectric domain walls T Kämpfe, P Reichenbach, A Haußmann, T Woike, E Soergel, LM Eng Applied Physics Letters 107 (15), 2015	46	2015
A Fully Integrated Ferroelectric Thin‐Film‐Transistor – Influence of Device Scaling on Threshold Voltage Compensation in Displays D Lehninger, M Ellinger, T Ali, S Li, K Mertens, M Lederer, R Olivio, ... Advanced Electronic Materials, 2100082, 2021	45	2021

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