Electrical and Interfacial Characterization of Atomic Layer Deposited High- GK Dalapati, Y Tong, WY Loh, HK Mun, BJ Cho
IEEE Transactions on electron devices 54 (8), 1831-1837, 2007
162 2007 Investigation and manipulation of different analog behaviors of memristor as electronic synapse for neuromorphic applications C Wang, W He, Y Tong, R Zhao
Scientific reports 6 (1), 22970, 2016
112 2016 Realization of artificial neuron using MXene bi-directional threshold switching memristors Y Chen, Y Wang, Y Luo, X Liu, Y Wang, F Gao, J Xu, E Hu, S Samanta, ...
IEEE Electron Device Letters 40 (10), 1686-1689, 2019
85 2019 Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs GK Dalapati, Y Tong, WY Loh, HK Mun, BJ Cho
Applied Physics Letters 90 (18), 2007
83 2007 Memristive devices with highly repeatable analog states boosted by graphene quantum dots C Wang, W He, Y Tong, Y Zhang, K Huang, L Song, S Zhong, ...
Small 13 (20), 1603435, 2017
58 2017 Resistance switching characteristics and mechanisms of MXene/SiO2 structure-based memristor X Lian, X Shen, M Zhang, J Xu, F Gao, X Wan, E Hu, Y Guo, J Zhao, ...
Applied Physics Letters 115 (6), 2019
53 2019 In-memory logic operations and neuromorphic computing in non-volatile random access memory QF Ou, BS Xiong, L Yu, J Wen, L Wang, Y Tong
Materials 13 (16), 3532, 2020
51 2020 Formation of new MXene film using spinning coating method with DMSO solution and its application in advanced memristive device M Zhang, Y Wang, F Gao, Y Wang, X Shen, N He, J Zhu, Y Chen, X Wan, ...
Ceramics International 45 (15), 19467-19472, 2019
49 2019 Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO2 /Pt RRAM Devices X Lian, X Shen, J Fu, Z Gao, X Wan, X Liu, E Hu, J Xu, Y Tong
Electronics 9 (12), 2098, 2020
42 2020 Selenium segregation for effective Schottky barrier height reduction in NiGe/n–Ge contacts Y Tong, B Liu, PSY Lim, YC Yeo
IEEE electron device letters 33 (6), 773-775, 2012
41 2012 V₂C-Based Memristor for Applications of Low Power Electronic Synapse N He, Q Zhang, L Tao, X Chen, Q Qin, X Liu, X Lian, X Wan, E Hu, J Xu, ...
IEEE Electron Device Letters 42 (3), 319-322, 2021
36 2021 Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs L Wang, G Han, S Su, Q Zhou, Y Yang, P Guo, W Wang, Y Tong, PSY Lim, ...
Electrochemical and Solid-State Letters 15 (6), H179, 2012
35 2012 Y Tong, G Han, B Liu, Y Yang, L Wang, W Wang, YC Yeo
IEEE transactions on electron devices 60 (2), 746-752, 2013
34 2013 Demonstration of 2D MXene memristor: Stability, conduction mechanism, and synaptic plasticity N He, X Liu, F Gao, Q Zhang, M Zhang, Y Wang, X Shen, X Wan, X Lian, ...
Materials Letters 266, 127413, 2020
32 2020 Artificial Neurons Based on Ag/V2 C/W Threshold Switching Memristors Y Wang, X Chen, D Shen, M Zhang, X Chen, X Chen, W Shao, H Gu, J Xu, ...
Nanomaterials 11 (11), 2860, 2021
30 2021 Degradable and dissolvable thin-film materials for the applications of new-generation environmental-friendly electronic devices X Liu, M Shi, Y Luo, L Zhou, ZR Loh, ZJ Oon, X Lian, X Wan, FBL Chong, ...
Applied Sciences 10 (4), 1320, 2020
26 2020 Germanium–Tin L Wang, S Su, W Wang, Y Yang, Y Tong, B Liu, P Guo, X Gong, G Zhang, ...
IEEE electron device letters 33 (11), 1529-1531, 2012
26 2012 Towards an universal artificial synapse using MXene-PZT based ferroelectric memristor M Zhang, Q Qin, X Chen, R Tang, A Han, S Yao, R Dan, Q Wang, Y Wang, ...
Ceramics International 48 (11), 16263-16272, 2022
25 2022 Recent advances in perovskites-based optoelectronics X Liu, Y Wang, Y Wang, Y Zhao, J Yu, X Shan, Y Tong, X Lian, X Wan, ...
Nanotechnology Reviews 11 (1), 3063-3094, 2022
23 2022 Reversible transition of volatile and nonvolatile switching in Ag–In–Zn–S quantum dot-based memristors with low power consumption for synaptic applications N He, L Tao, Q Zhang, X Liu, X Lian, X Wan, ET Hu, L He, Y Sheng, F Xu, ...
ACS Applied Nano Materials 4 (3), 2365-2374, 2021
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