Microscopic thickness determination of thin graphite films formed on H Hibino, H Kageshima, F Maeda, M Nagase, Y Kobayashi, H Yamaguchi
Physical Review B—Condensed Matter and Materials Physics 77 (7), 075413, 2008
482 2008 Dependence of electronic properties of epitaxial few-layer graphene on the number of layers investigated by photoelectron emission microscopy H Hibino, H Kageshima, M Kotsugi, F Maeda, FZ Guo, Y Watanabe
Physical Review B—Condensed Matter and Materials Physics 79 (12), 125437, 2009
321 2009 First-Principles Study of Oxide Growth on Si(100) Surfaces and at H Kageshima, K Shiraishi
Physical review letters 81 (26), 5936, 1998
295 1998 Momentum-matrix-element calculation using pseudopotentials H Kageshima, K Shiraishi
Physical Review B 56 (23), 14985, 1997
206 1997 Universal theory of Si oxidation rate and importance of interfacial Si emission H Kageshima, K Shiraishi, M Uematsu
Japanese journal of applied physics 38 (9A), L971, 1999
201 1999 First-principles theory of scanning tunneling microscopy M Tsukada, K Kobayashi, N Isshiki, H Kageshima
Surface Science Reports 13 (8), 267-304, 1991
186 1991 Epitaxial few-layer graphene: towards single crystal growth H Hibino, H Kageshima, M Nagase
Journal of Physics D: Applied Physics 43 (37), 374005, 2010
165 2010 Growth and low-energy electron microscopy characterization of monolayer hexagonal boron nitride on epitaxial cobalt CM Orofeo, S Suzuki, H Kageshima, H Hibino
Nano Research 6, 335-347, 2013
139 2013 Carrier transport mechanism in graphene on SiC (0001) S Tanabe, Y Sekine, H Kageshima, M Nagase, H Hibino
Physical Review B—Condensed Matter and Materials Physics 84 (11), 115458, 2011
138 2011 Stacking domains of epitaxial few-layer graphene on SiC (0001) H Hibino, S Mizuno, H Kageshima, M Nagase, H Yamaguchi
Physical Review B—Condensed Matter and Materials Physics 80 (8), 085406, 2009
119 2009 Mechanism of potential profile formation in silicon single-electron transistors fabricated using pattern-dependent oxidation S Horiguchi, M Nagase, K Shiraishi, H Kageshima, Y Takahashi, ...
Japanese Journal of Applied Physics 40 (1A), L29, 2001
110 2001 Self-diffusion of Si in thermally grown T Takahashi, S Fukatsu, KM Itoh, M Uematsu, A Fujiwara, H Kageshima, ...
Journal of applied physics 93 (6), 3674-3676, 2003
109 2003 Theoretical investigation of nitrogen-doping effect on vacancy aggregation processes in Si H Kageshima, A Taguchi, K Wada
Applied Physics Letters 76 (25), 3718-3720, 2000
105 2000 Scanning-tunneling-microscopy observation of thermal oxide growth on Si (111) 7× 7 surfaces Y Ono, M Tabe, H Kageshima
Physical Review B 48 (19), 14291, 1993
96 1993 Half-integer quantum Hall effect in gate-controlled epitaxial graphene devices S Tanabe, Y Sekine, H Kageshima, M Nagase, H Hibino
Applied physics express 3 (7), 075102, 2010
87 2010 Effect of the S Fukatsu, T Takahashi, KM Itoh, M Uematsu, A Fujiwara, H Kageshima, ...
Applied physics letters 83 (19), 3897-3899, 2003
87 2003 Modeling of Si self-diffusion in M Uematsu, H Kageshima, Y Takahashi, S Fukatsu, KM Itoh, K Shiraishi, ...
Applied physics letters 84 (6), 876-878, 2004
86 2004 Unified simulation of silicon oxidation based on the interfacial silicon emission model M Uematsu, H Kageshima, K Shiraishi
Japanese Journal of Applied Physics 39 (7B), L699, 2000
83 2000 Growth and electronic transport properties of epitaxial graphene on SiC H Hibino, S Tanabe, S Mizuno, H Kageshima
Journal of physics D: Applied physics 45 (15), 154008, 2012
81 2012 Theoretical study of epitaxial graphene growth on SiC (0001) surfaces H Kageshima, H Hibino, M Nagase, H Yamaguchi
Applied physics express 2 (6), 065502, 2009
81 2009 