Cheng Zhang (张成)

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Referințe bibliografice	3409	2208
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i10-index	36	36

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Faxian XiuPhysics Department, Fudan UniversityAdresă de e-mail confirmată pe fudan.edu.cn
Xiang Yuan (袁翔)East China Normal UniversityAdresă de e-mail confirmată pe lps.ecnu.edu.cn
Zhou PengFudan UniversityAdresă de e-mail confirmată pe fudan.edu.cn
Awadhesh NarayanAssociate Professor, Indian Institute of ScienceAdresă de e-mail confirmată pe tcd.ie
Stefano SanvitoTrinity College DublinAdresă de e-mail confirmată pe tcd.ie
Enze ZhangResearch Fellow, Department of Electrical and Computer Engineering, National University of SingaporeAdresă de e-mail confirmată pe fudan.edu.cn
Zhi-Gang Chen (陈志刚)Professor in Energy Materials, Queensland University of TechnologyAdresă de e-mail confirmată pe qut.edu.au
Hai-Zhou LuProfessor of Physics, Southern University of Science and TechnologyAdresă de e-mail confirmată pe sustech.edu.cn
Weida Hu (胡伟达)Shanghai Institute of Technical Physics, CASAdresă de e-mail confirmată pe mail.sitp.ac.cn
Hugen Yan (晏湖根)Professor of Physics, Fudan University; Columbia Univ(PhD); IBM T. J. Watson Research(PostDoc&RSM))Adresă de e-mail confirmată pe fudan.edu.cn
Zhuoliang NiUniversity of PennsylvaniaAdresă de e-mail confirmată pe sas.upenn.edu
Zhongbo YanSun Yat-Sen UniversityAdresă de e-mail confirmată pe mail.tsinghua.edu.cn
Yi ZhangPeking UniversityAdresă de e-mail confirmată pe pku.edu.cn
Sihang LiangPrinceton UniversityAdresă de e-mail confirmată pe alumni.princeton.edu
Alexey V SuslovNational High Magnetic Field LaboratoryAdresă de e-mail confirmată pe magnet.fsu.edu
Peng WangShanghai Institute of Technical Physics, CASAdresă de e-mail confirmată pe mail.sitp.ac.cn
yizheng wufudan universityAdresă de e-mail confirmată pe fudan.edu.cn
Andrew C. PotterUniversity of British Columbia and Stewart Blusson Quantum Matter InstituteAdresă de e-mail confirmată pe phas.ubc.ca
Xue JiangFudan UniversityAdresă de e-mail confirmată pe fudan.edu.cn
Zhong Wang (汪忠)Institute for Advanced Study, Tsinghua UniversityAdresă de e-mail confirmată pe mail.tsinghua.edu.cn

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Cheng Zhang (张成)

Alte nume张成

Institute for Nanoelectronic Devices and Quantum Computing, Fudan University

Adresă de e-mail confirmată pe fudan.edu.cn - Pagina de pornire

Topological matter quantum transport nanodevice high magnetic field


Titlu Sortați după descrierea bibliografică Sortați după an Sortați după titlu	Citat de Citat de	Anul
ReS2‐Based Field‐Effect Transistors and Photodetectors E Zhang, Y Jin, X Yuan, W Wang, C Zhang, L Tang, S Liu, P Zhou, W Hu, ... Advanced Functional Materials 25 (26), 4076-4082, 2015	370	2015
Tunable charge-trap memory based on few-layer MoS2 E Zhang, W Wang, C Zhang, Y Jin, G Zhu, Q Sun, DW Zhang, P Zhou, ... ACS nano 9 (1), 612-619, 2014	285	2014
Quantum Hall effect based on Weyl orbits in Cd 3 As 2 C Zhang, Y Zhang, X Yuan, S Lu, J Zhang, A Narayan, Y Liu, H Zhang, ... Nature 565 (7739), 331-336, 2019	263	2019
Wafer-scale two-dimensional ferromagnetic Fe 3 GeTe 2 thin films grown by molecular beam epitaxy S Liu, X Yuan, Y Zou, Y Sheng, C Huang, E Zhang, J Ling, Y Liu, W Wang, ... npj 2D Materials and Applications 1 (1), 30, 2017	233	2017
Zeeman splitting and dynamical mass generation in Dirac semimetal ZrTe5 Y Liu, X Yuan, C Zhang, Z Jin, A Narayan, C Luo, Z Chen, L Yang, J Zou, ... Nature Communications 7, 12516, 2016	211	2016
Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy X Yuan, L Tang, S Liu, P Wang, ZG Chen, C Zhang, Y Liu, W Wang, Y Zou, ... Nano letters 15 (5), 3571–3577, 2015	181	2015
Room-temperature chiral charge pumping in Dirac semimetals C Zhang, E Zhang, W Wang, Y Liu, ZG Chen, S Lu, S Liang, J Cao, ... Nature communications 8, 13741, 2017	177*	2017
Landau level splitting in Cd3As2 under high magnetic fields J Cao, S Liang, C Zhang, Y Liu, J Huang, Z Jin, ZG Chen, Z Wang, ... Nature Communications 6, 7779, 2015	156	2015
Evolution of Weyl orbit and quantum Hall effect in Dirac semimetal Cd 3 As 2 C Zhang, A Narayan, S Lu, J Zhang, H Zhang, Z Ni, X Yuan, Y Liu, ... Nature Communications 8 (1), 1272, 2017	154	2017
Ultrahigh conductivity in Weyl semimetal NbAs nanobelts C Zhang, Z Ni, J Zhang, X Yuan, Y Liu, Y Zou, Z Liao, Y Du, A Narayan, ... Nature materials 18 (5), 482-488, 2019	119	2019
The discovery of dynamic chiral anomaly in a Weyl semimetal NbAs X Yuan, C Zhang, Y Zhang, Z Yan, T Lyu, M Zhang, Z Li, C Song, M Zhao, ... Nature communications 11 (1), 1259, 2020	108	2020
Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films Y Liu, C Zhang, X Yuan, T Lei, C Wang, D Di Sante, A Narayan, L He, ... NPG Asia Materials 7 (10), e221, 2015	92	2015
Observation of quasi-two-dimensional Dirac fermions in ZrTe5 X Yuan, C Zhang, Y Liu, A Narayan, C Song, S Shen, X Sui, J Xu, H Yu, ... NPG Asia Materials 8 (11), e325, 2016	80	2016
Inducing Strong Superconductivity in WTe₂ by a Proximity Effect C Huang, A Narayan, E Zhang, Y Liu, X Yan, J Wang, C Zhang, W Wang, ... ACS nano 12 (7), 7185-7196, 2018	77	2018
Magnetotransport properties of Cd3As2 nanostructures E Zhang, Y Liu, W Wang, C Zhang, P Zhou, ZG Chen, J Zou, F Xiu ACS nano 9 (9), 8843–8850, 2015	66	2015
Thickness-dependent quantum oscillations in Cd3As2 thin films P Cheng, C Zhang, Y Liu, X Yuan, F Song, Q Sun, P Zhou, DW Zhang, ... New Journal of Physics 18 (8), 083003, 2016	62	2016
Controllable Growth of Vertical Heterostructure GaTe x Se1–x/Si by Molecular Beam Epitaxy S Liu, X Yuan, P Wang, ZG Chen, L Tang, E Zhang, C Zhang, Y Liu, ... ACS nano 9 (8), 8592-8598, 2015	60	2015
Quantum Corrections Crossover and Ferromagnetism in Magnetic Topological Insulators L Bao, W Wang, N Meyer, Y Liu, C Zhang, K Wang, P Ai, F Xiu Scientific reports 3, 2391, 2013	56	2013
Chiral Landau levels in Weyl semimetal NbAs with multiple topological carriers X Yuan, Z Yan, C Song, M Zhang, Z Li, C Zhang, Y Liu, W Wang, M Zhao, ... Nature communications 9 (1), 1854, 2018	55	2018
Wafer-scale arrayed pn junctions based on few-layer epitaxial GaTe X Yuan, L Tang, P Wang, Z Chen, Y Zou, X Su, C Zhang, Y Liu, W Wang, ... Nano Research 8 (10), 3332-3341, 2015	54	2015

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