Thomas Mikolajick

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Stefan SlesazeckNaMLab gGmbHAdresă de e-mail confirmată pe namlab.com
Walter M. WeberProfessor of Nanoelectronics at TU WienAdresă de e-mail confirmată pe tuwien.ac.at
Halid MulaosmanovicGlobalFoundries Inc.Adresă de e-mail confirmată pe polimi.it
Jens TrommerNamlab gGmbHAdresă de e-mail confirmată pe namlab.com
Tony SchenkMember of Technical Staff & Lead of Cell Development at Ferroelectric Memory CompanyAdresă de e-mail confirmată pe ferroelectric-memory.com
Milan PesicApplied Materials Inc | MDLab/MDLSoft | Namlab | TU DresdenAdresă de e-mail confirmată pe amat.com
Min Hyuk ParkSeoul National UniversityAdresă de e-mail confirmată pe snu.ac.kr
André HeinzigNaMLab, TU DresdenAdresă de e-mail confirmată pe namlab.com
Patrick D LomenzoNanoelectronic Materials Laboratory, NaMLabAdresă de e-mail confirmată pe namlab.com
Dominik MartinFerdinand-Braun-InstitutAdresă de e-mail confirmată pe alumni.tu-berlin.de
Terence MittmannNaMLab gGmbHAdresă de e-mail confirmată pe namlab.com
Monica MateranoR&D Engineer, EYE4NIRAdresă de e-mail confirmată pe eye4nir.com
Evelyn T. Breyer↷Adresă de e-mail confirmată pe tu-dresden.de
Benjamin MaxTU Dresden, Institute for Semiconductor and Microsystems, Chair of NanoelectronicsAdresă de e-mail confirmată pe tu-dresden.de
Matthias GrubeFraunhofer IPMSAdresă de e-mail confirmată pe ipms.fraunhofer.de
Franz P. G. FenglerNaMLab gGmbHAdresă de e-mail confirmată pe namlab.com
Jacob L. JonesMaterials Science & Engineering, North Carolina State UniversityAdresă de e-mail confirmată pe ncsu.edu
Sven BeyerGlobalfoundriesAdresă de e-mail confirmată pe globalfoundries.com
Cheol Seong HwangProfessor, Department of Materials Science and Engineering, Seoul National UniversityAdresă de e-mail confirmată pe snu.ac.kr
Darius PohlDCN - TU DresdenAdresă de e-mail confirmată pe tu-dresden.de

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Thomas Mikolajick

Scientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU Dresden

Adresă de e-mail confirmată pe namlab.com - Pagina de pornire

semiconductor materials and devices nonvolatile memory microelectronics ferroelectrics GaN


Titlu Sortați după descrierea bibliografică Sortați după an Sortați după titlu	Citat de Citat de	Anul
Ferroelectricity in Simple Binary ZrO₂ and HfO₂ J Muller, TS Boscke, U Schroder, S Mueller, D Brauhaus, U Bottger, ... Nano letters 12 (8), 4318-4323, 2012	1782	2012
Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ... Advanced Materials 27 (11), 1811-1831, 2015	1144	2015
Incipient ferroelectricity in Al‐doped HfO2 thin films S Mueller, J Mueller, A Singh, S Riedel, J Sundqvist, U Schroeder, ... Advanced Functional Materials 22 (11), 2412-2417, 2012	900	2012
Physical Mechanisms behind the Field‐Cycling Behavior of HfO₂‐Based Ferroelectric Capacitors M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ... Advanced Functional Materials 26 (25), 4601-4612, 2016	847	2016
Ferroelectricity in yttrium-doped hafnium oxide J Müller, U Schröder, TS Böscke, I Müller, U Böttger, L Wilde, J Sundqvist, ... Journal of Applied Physics 110 (11), 2011	716	2011
Ferroelectric Zr0. 5Hf0. 5O2 thin films for nonvolatile memory applications J Müller, TS Böscke, D Bräuhaus, U Schröder, U Böttger, J Sundqvist, ... Applied Physics Letters 99 (11), 2011	641	2011
Stabilizing the ferroelectric phase in doped hafnium oxide M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ... Journal of Applied Physics 118 (7), 2015	595	2015
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories J Muller, TS Boscke, S Muller, E Yurchuk, P Polakowski, J Paul, D Martin, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 10.8. 1-10.8. 4, 2013	554	2013
Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospects J Müller, P Polakowski, S Mueller, T Mikolajick ECS Journal of Solid State Science and Technology 4 (5), N30-N35, 2015	549	2015
A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ... 2017 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2017	540	2017
Review and perspective on ferroelectric HfO2-based thin films for memory applications MH Park, YH Lee, T Mikolajick, U Schroeder, CS Hwang Mrs Communications 8 (3), 795-808, 2018	524	2018
2022 roadmap on neuromorphic computing and engineering DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ... Neuromorphic Computing and Engineering 2 (2), 022501, 2022	517	2022
Reconfigurable silicon nanowire transistors A Heinzig, S Slesazeck, F Kreupl, T Mikolajick, WM Weber Nano letters 12 (1), 119-124, 2012	499	2012
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ... 2016 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2016	431	2016
Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO₂ Thin Films ED Grimley, T Schenk, X Sang, M Pešić, U Schroeder, T Mikolajick, ... Advanced Electronic Materials 2 (9), 1600173, 2016	420	2016
Impact of different dopants on the switching properties of ferroelectric hafniumoxide U Schroeder, E Yurchuk, J Müller, D Martin, T Schenk, P Polakowski, ... Japanese Journal of Applied Physics 53 (8S1), 08LE02, 2014	419	2014
Unveiling the double-well energy landscape in a ferroelectric layer M Hoffmann, FPG Fengler, M Herzig, T Mittmann, B Max, U Schroeder, ... Nature 565 (7740), 464-467, 2019	412	2019
The fundamentals and applications of ferroelectric HfO₂ U Schroeder, MH Park, T Mikolajick, CS Hwang Nature Reviews Materials 7 (8), 653-669, 2022	406	2022
The past, the present, and the future of ferroelectric memories T Mikolajick, U Schroeder, S Slesazeck IEEE Transactions on Electron Devices 67 (4), 1434-1443, 2020	404	2020
Phase transitions in ferroelectric silicon doped hafnium oxide TS Böscke, S Teichert, D Bräuhaus, J Müller, U Schröder, U Böttger, ... Applied Physics Letters 99 (11), 2011	401	2011

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