| A room temperature 0.1/spl mu/m CMOS on SOI GG Shahidi, CA Anderson, BA Chappell, TI Chappell, JH Comfort, ... IEEE Transactions on Electron Devices 41 (12), 2405-2412, 1994 | 136 | 1994 |
| Analysis of snubber-clamped diode-string mixed voltage interface ESD protection network for advanced microprocessors SH Voldman, G Gerosa, VP Gross, N Dickson, S Furkay, J Slinkman Journal of electrostatics 38 (1-2), 3-31, 1996 | 82 | 1996 |
| Phase change memory cell on silicon-on insulator substrate SS Furkay, H Hamann, JB Johnson, CH Lam, HP Wong US Patent 7,005,665, 2006 | 76 | 2006 |
| Field emission phase change diode memory SS Furkay, DV Horak, CH Lam, HP Wong US Patent 7,057,923, 2006 | 73 | 2006 |
| A new three-dimensional device simulation formulation E Buturla NASECODE VI Proceedings, 291-296, 1989 | 67 | 1989 |
| Ultralow-power SRAM technology RW Mann, WW Abadeer, MJ Breitwisch, O Bula, JS Brown, BC Colwill, ... IBM Journal of Research and Development 47 (5.6), 553-566, 2003 | 65 | 2003 |
| Structural dependence of the thermal resistance of trench-isolated bipolar transistors JS Rieh, J Johnson, S Furkay, D Greenberg, G Freeman, S Subbanna Proceedings of the bipolar/BiCMOS circuits and technology meeting, 100-103, 2002 | 65 | 2002 |
| The use of simulation in semiconductor technology development DC Cole, EM Buturla, SS Furkay, K Varahramyan, J Slinkman, ... Solid-State Electronics 33 (6), 591-623, 1990 | 57 | 1990 |
| Ab initio study of metal grain orientation-dependent work function and its impact on FinFET variability S Agarwal, RK Pandey, JB Johnson, A Dixit, M Bajaj, SS Furkay, ... IEEE transactions on electron devices 60 (9), 2728-2733, 2013 | 35 | 2013 |
| Electrostatic discharge and high current pulse characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors S Voldman, P Juliano, R Johnson, N Schmidt, A Joseph, S Furkay, ... 2000 IEEE International Reliability Physics Symposium Proceedings. 38th …, 2000 | 31 | 2000 |
| Three-dimensional transient electrothermal simulation of electrostatic discharge protection circuits SH Voldman, SS Furkay, JR Slinkman Journal of electrostatics 36 (1), 55-80, 1995 | 31 | 1995 |
| Crystallographic-orientation-dependent gate-induced drain leakage in nanoscale MOSFETs RK Pandey, KVRM Murali, SS Furkay, PJ Oldiges, EJ Nowak IEEE transactions on electron devices 57 (9), 2098-2105, 2010 | 30 | 2010 |
| Semiconductor device fabrication method and apparatus using connecting implants JS Brown, SS Furkay, RJ Gauthier Jr, X Tian, MH Tong, SH Voldman US Patent 6,097,068, 2000 | 28 | 2000 |
| Reduction of reverse short channel effects by implantation of neutral dopants JS Brown, SS Furkay, RJ Gauthier Jr, DW Martin, JA Slinkman US Patent 6,486,510, 2002 | 23 | 2002 |
| 30 GHz polysilicon-emitter and single-crystal-emitter graded SiGe-base PNP transistors DL Harame, JMC Stork, BS Meyerson, EF Crabbe, GJ Scilla, E De Fresart, ... International Technical Digest on Electron Devices, 33-36, 1990 | 22 | 1990 |
| One mask hyperabrupt junction varactor using a compensated cathode contact DD Coolbaugh, SS Furkay, JB Johnson, RM Rassel US Patent 7,518,215, 2009 | 20 | 2009 |
| High performance varactor diodes DD Coolbaugh, SS Furkay, MY Hammad, JB Johnson US Patent 6,803,269, 2004 | 19 | 2004 |
| Structure and method of hyper-abrupt junction varactors DD Coolbaugh, SS Furkay, JB Johnson, RM Rassel, DC Sheridan US Patent 7,183,628, 2007 | 14 | 2007 |
| Bottom-up methodology for predictive simulations of self-heating in aggressively scaled process technologies D Singh, OD Restrepo, PP Manik, NR Mavilla, H Zhang, P Paliwoda, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 6F. 6-1-6F. 6-7, 2018 | 12 | 2018 |
| Structure and method for hyper-abrupt junction varactors DD Coolbaugh, SS Furkay, JB Johnson, RM Rassel, DC Sheridan US Patent 7,253,073, 2007 | 12 | 2007 |
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