Loke Wan Khai

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Satrio WicaksonoNational University of SingaporeAdresă de e-mail confirmată pe nus.edu.sg
Kian Hua TanNational University of SingaporeAdresă de e-mail confirmată pe nus.edu.sg
Tien Khee NgPrincipal Scientist, KAUST; Fellow of IET, Fellow of IOPAdresă de e-mail confirmată pe kaust.edu.sa
E A FitzgeraldCornell, ATT, MIT, Massachusetts Institute of Technology, NTUAdresă de e-mail confirmată pe mit.edu
Andrew NgoScientist of Institute of Materials Research and Engineering (IMRE), A*STARAdresă de e-mail confirmată pe imre.a-star.edu.sg
Carl DohrmanSystems and Technology Research, Inc.Adresă de e-mail confirmată pe alum.mit.edu
Andrew T S WeeDepartment of Physics, National University of SingaporeAdresă de e-mail confirmată pe nus.edu.sg
Cunzhu TongChangchun Inst. of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of SciencesAdresă de e-mail confirmată pe ciomp.ac.cn
Charlotte Tripon-CanselietLPEM - ESPCI/CNRS/SUAdresă de e-mail confirmată pe espci.fr
Sujith SubramanianIMECAdresă de e-mail confirmată pe imec.be
Eduward TangdionggaAssociate Professor of Electrical Engineering, Eindhoven University of Technology, The NetherlandsAdresă de e-mail confirmată pe tue.nl
Qing ZhangSchool of Electrical and Electronic Engineering, Nanyang Technological UniversityAdresă de e-mail confirmată pe ntu.edu.sg
Hong Li (Colin)Nanyang Technological UniversityAdresă de e-mail confirmată pe ntu.edu.sg
Duane BoningMassachusetts Institute of TechnologyAdresă de e-mail confirmată pe mtl.mit.edu
Nigel Dregoquadric.io, Inc.Adresă de e-mail confirmată pe alum.mit.edu
Ru-Shi LiuDepartment of Chemistry, National Taiwan UniveristyAdresă de e-mail confirmată pe ntu.edu.tw
Chongyang LiuNanyang Technological University, Temasek Lab @ NTUAdresă de e-mail confirmată pe ntu.edu.sg
TokesAssociate Professor, National University of SingaporeAdresă de e-mail confirmată pe nus.edu.sg
Zhen ZhangGenentechAdresă de e-mail confirmată pe gene.com
Kailiang ChenMITAdresă de e-mail confirmată pe mit.edu

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Loke Wan Khai

National University of Singapore

Adresă de e-mail confirmată pe nus.edu.sg

Epitaxy growth III-V compound semiconductor Solar cell Mid-infrared photodetector III-V Si integration


Titlu Sortați după descrierea bibliografică Sortați după an Sortați după titlu	Citat de Citat de	Anul
Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth Y Dong, W Wang, S Xu, D Lei, X Gong, X Guo, H Wang, SY Lee, WK Loke, ... Optics express 25 (14), 15818-15827, 2017	106	2017
Suppression of dark current in germanium-tin on silicon pin photodiode by a silicon surface passivation technique Y Dong, W Wang, D Lei, X Gong, Q Zhou, SY Lee, WK Loke, SF Yoon, ... Optics express 23 (14), 18611-18619, 2015	97	2015
Comparison of nitrogen compositions in the as-grown on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy WJ Fan, SF Yoon, TK Ng, SZ Wang, WK Loke, R Liu, A Wee Applied physics letters 80 (22), 4136-4138, 2002	86	2002
Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics BW Jia, KH Tan, WK Loke, S Wicaksono, KH Lee, SF Yoon ACS Photonics 5 (4), 1512-1520, 2018	82	2018
Growth of GaAs on vicinal Ge surface using low-temperature migration-enhanced epitaxy H Tanoto, SF Yoon, WK Loke, EA Fitzgerald, C Dohrman, B Narayanan, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006	80	2006
Rate Equations for 1.3-m Dots-Under-a-Well and Dots-in-a-Well Self-Assembled InAs–GaAs Quantum-Dot Lasers CZ Tong, SF Yoon, CY Ngo, CY Liu, WK Loke IEEE journal of quantum electronics 42 (11), 1175-1183, 2006	77	2006
Germanium-tin on Si avalanche photodiode: device design and technology demonstration Y Dong, W Wang, X Xu, X Gong, D Lei, Q Zhou, Z Xu, WK Loke, SF Yoon, ... IEEE Transactions on Electron Devices 62 (1), 128-135, 2014	68	2014
Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range W Wang, Y Dong, SY Lee, WK Loke, D Lei, SF Yoon, G Liang, X Gong, ... Optics express 25 (16), 18502-18507, 2017	62	2017
Rapid thermal annealing of grown by radio-frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence WK Loke, SF Yoon, SZ Wang, TK Ng, WJ Fan Journal of applied physics 91 (8), 4900-4903, 2002	61	2002
High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform W Wang, D Lei, YC Huang, KH Lee, WK Loke, Y Dong, S Xu, CS Tan, ... Optics express 26 (8), 10305-10314, 2018	47	2018
Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell KH Tan, S Wicaksono, WK Loke, D Li, SF Yoon, EAA Fitzgerald, ... Journal of Crystal Growth 335 (1), 66-69, 2011	44	2011
Incorporation of N into GaAsN under N overpressure and underpressure conditions S Zhongzhe, YS Fatt, YK Chuin, LW Khai, F Weijun, W Shanzhong, ... Journal of applied physics 94 (2), 1069-1073, 2003	34	2003
Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength Y Dong, W Wang, SY Lee, D Lei, X Gong, WK Loke, SF Yoon, G Liang, ... Semiconductor Science and Technology 31 (9), 095001, 2016	33	2016
Degradation of subcells and tunnel junctions during growth of GaInP/Ga (In) As/GaNAsSb/Ge 4‐junction solar cells I García, M Ochoa, I Lombardero, L Cifuentes, M Hinojosa, P Caño, ... Progress in Photovoltaics: Research and Applications 25 (11), 887-895, 2017	32	2017
Defect-induced trap-assisted tunneling current in GaInNAs grown on GaAs substrate WK Loke, SF Yoon, S Wicaksono, KH Tan, KL Lew Journal of Applied Physics 102 (5), 2007	32	2007
High gain AlGaAs∕ GaAs heterojunction bipolar transistor fabricated on SiGe∕ Si substrate KL Lew, SF Yoon, WK Loke, H Tanoto, CL Dohrman, DM Isaacson, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007	32	2007
High-speed picosecond pulse response GaNAsSb pin photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy KH Tan, SF Yoon, WK Loke, S Wicaksono, KL Lew, A Stöhr, O Ecin, ... Applied physics letters 90 (18), 2007	32	2007
Determination of nitrogen composition in GaNxas1− x epilayer on GaAs WJ Fan, SF Yoon, WK Cheah, WK Loke, TK Ng, SZ Wang, R Liu, A Wee Journal of crystal growth 268 (3-4), 470-474, 2004	32	2004
Formation of interfacial misfit dislocation in GaSb/GaAs heteroepitaxy via anion exchange process KH Tan, BW Jia, WK Loke, S Wicaksono, SF Yoon Journal of Crystal Growth 427, 80-86, 2015	28	2015
Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature TK Ng, SF Yoon, SZ Wang, WK Loke, WJ Fan Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002	28	2002

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