Defect tolerant semiconductors for solar energy conversion A Zakutayev, CM Caskey, AN Fioretti, DS Ginley, J Vidal, V Stevanovic, ...
The journal of physical chemistry letters 5 (7), 1117-1125, 2014
406 2014 Synthesis, structure, and optoelectronic properties of II–IV–V 2 materials AD Martinez, AN Fioretti, ES Toberer, AC Tamboli
Journal of Materials Chemistry A 5 (23), 11418-11435, 2017
185 2017 Combinatorial insights into doping control and transport properties of zinc tin nitride AN Fioretti, A Zakutayev, H Moutinho, C Melamed, JD Perkins, ...
Journal of Materials Chemistry C 3 (42), 11017-11028, 2015
170 2015 Monte Carlo simulations of disorder in S Lany, AN Fioretti, PP Zawadzki, LT Schelhas, ES Toberer, A Zakutayev, ...
Physical Review Materials 1 (3), 035401, 2017
116 2017 Effects of hydrogen on acceptor activation in ternary nitride semiconductors AN Fioretti, A Stokes, MR Young, B Gorman, ES Toberer, AC Tamboli, ...
Advanced Electronic Materials 3 (NREL/JA-5K00-67268), 2017
70 2017 Exciton photoluminescence and benign defect complex formation in zinc tin nitride AN Fioretti, J Pan, BR Ortiz, CL Melamed, PC Dippo, LT Schelhas, ...
Materials Horizons 5 (5), 823-830, 2018
50 2018 Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride M Birkett, CN Savory, AN Fioretti, P Thompson, CA Muryn, ...
Physical Review B 95 (11), 115201, 2017
47 2017 Understanding and control of bipolar self-doping in copper nitride AN Fioretti, CP Schwartz, J Vinson, D Nordlund, D Prendergast, ...
Journal of applied physics 119 (18), 2016
39 2016 Low-Temperature AN Fioretti, M Boccard, R Monnard, C Ballif
IEEE Journal of Photovoltaics 9 (5), 1158-1165, 2019
38 2019 Band edge positions and their impact on the simulated device performance of ZnSnN2-based solar cells E Arca, A Fioretti, S Lany, AC Tamboli, G Teeter, C Melamed, J Pan, ...
IEEE Journal of Photovoltaics 8 (1), 110-117, 2017
35 2017 Bridging the p-type transparent conductive materials gap: synthesis approaches for disperse valence band materials AN Fioretti, M Morales-Masis
Journal of Photonics for Energy 10 (4), 042002-042002, 2020
32 2020 Evaluating materials design parameters of hole-selective contacts for silicon heterojunction solar cells R Woods-Robinson, AN Fioretti, J Haschke, M Boccard, KA Persson, ...
IEEE Journal of Photovoltaics 11 (2), 247-258, 2020
15 2020 Nitride layer screening as carrier-selective contacts for silicon heterojunction solar cells AN Fioretti, M Boccard, AC Tamboli, A Zakutayev, C Ballif
AIP conference proceedings 1999 (1), 2018
12 2018 On the correlation between contact resistivity and high efficiency in (IBC-) SHJ solar cells P Procel, H Xu, L Mazzarella, LL Senaud, B Paviet-Salomon, ...
11 2019 Effects of low temperature annealing on the transport properties of zinc tin nitride AN Fioretti, ES Toberer, A Zakutayev, AC Tamboli
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 1-5, 2015
10 2015 Muon g-2Collaboration J Grange, R Hong, P Winter, RM Carey, E Hazen, N Kinnaird, JP Miller, ...
arXiv preprint arXiv:1501.06858, 2015
8 2015 Gallium nitride as transparent electron-selective contact in silicon heterojunction solar cells AN Fioretti, TCC Chien, Y Xiao, C Ballif, M Boccard
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 2608-2612, 2019
7 2019 Development of zinc tin nitride for application as an earth abundant photovoltaic absorber AN Fioretti
Colorado School of Mines, 2017
7 2017 Paths for maximal light incoupling and excellent electrical performances in silicon heterojunction solar cells M Boccard, L Antognini, J Cattin, J Dréon, O Dupré, A Fioretti, J Haschke, ...
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 2541-2545, 2019
6 2019 Linking simulation and synthesis of nickel oxide hole-selective contacts for silicon heterojunction solar cells R Woods-Robinson, AN Fioretti, J Haschke, M Boccard, KA Persson, ...
2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 0569-0573, 2020
4 2020 
Andriy ZakutayevNational Renewable Energy LaboratoryAdresă de e-mail confirmată pe nrel.gov