| Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals S Park, SY Kim, Y Choi, M Kim, H Shin, J Kim, W Choi ACS Applied Materials & Interfaces 8 (18), 11189-11193, 2016 | 95 | 2016 |
| Enhanced carrier mobility of multilayer MoS2 thin-film transistors by Al2O3 encapsulation SY Kim, S Park, W Choi Applied Physics Letters 109 (15), 2016 | 67 | 2016 |
| Interface Chemistry and Band Alignment Study of Ni and Ag Contacts on MoS2 X Wang, SY Kim, RM Wallace ACS Applied Materials & Interfaces 13 (13), 15802-15810, 2021 | 37 | 2021 |
| Photoluminescence quenching in monolayer transition metal dichalcogenides by Al2O3 encapsulation SY Kim, HI Yang, W Choi Applied Physics Letters 113 (13), 2018 | 25 | 2018 |
| Variability of electrical contact properties in multilayer MoS2 thin-film transistors SY Kim, S Park, W Choi Applied Physics A 117, 761-766, 2014 | 17 | 2014 |
| Origins of Fermi level pinning for Ni and Ag metal contacts on tungsten dichalcogenides X Wang, Y Hu, SY Kim, R Addou, K Cho, RM Wallace ACS nano 17 (20), 20353-20365, 2023 | 15 | 2023 |
| Effect of Al2O3 encapsulation on multilayer MoSe2 thin-film transistors HA Lee, SY Kim, J Kim, W Choi Journal of Physics D: Applied Physics 50 (9), 094001, 2017 | 12 | 2017 |
| Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts Z Sun, SY Kim, J Cai, J Shen, HY Lan, Y Tan, X Wang, C Shen, H Wang, ... ACS nano 18 (33), 22444-22453, 2024 | 10 | 2024 |
| Mechanism of Fermi Level Pinning for Metal Contacts on Molybdenum Dichalcogenide X Wang, Y Hu, SY Kim, K Cho, RM Wallace ACS Applied Materials & Interfaces 16 (10), 13258-13266, 2024 | 5 | 2024 |
| Large-Area Intercalated Two-Dimensional Pb/Graphene Heterostructure as a Platform for Generating Spin–Orbit Torque A Vera, B Zheng, W Yanez, K Yang, SY Kim, X Wang, JC Kotsakidis, ... ACS nano 18 (33), 21985-21997, 2024 | 4 | 2024 |
| Fundamental Understanding of Interface Chemistry and Electrical Contact Properties of Bi and MoS2 SY Kim, Z Sun, J Roy, X Wang, Z Chen, J Appenzeller, RM Wallace ACS Applied Materials & Interfaces 16 (40), 54790-54798, 2024 | 1 | 2024 |
| Interface chemistry, band alignment, and thermal stability study of Sn metal contact on bulk and monolayer MoS2 J Roy, SY Kim, RM Wallace Journal of Vacuum Science & Technology B 42 (5), 2024 | | 2024 |
