| Giant electrostriction-like response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si (100) SK Parate, S Vura, S Pal, U Khandelwal, RS Sandilya Ventrapragada, ... Nature Communications 15 (1), 1428, 2024 | 7 | 2024 |
| Heterogeneous Integration of High Endurance Ferroelectric and Piezoelectric Epitaxial BaTiO3 Devices on Si A Haque, HJ D'Souza, SK Parate, RS Sandilya, S Raghavan, P Nukala Advanced Functional Materials 35 (1), 2413515, 2025 | 1 | 2025 |
| Carrier-Induced Metal-to-Insulator Transition in Electrostatically Doped VO2 D Mondal, SR Mahapatra, SK Parate, P Nukala, NPB Aetukuri Chemistry of Materials 36 (24), 11795-11803, 2024 | 1 | 2024 |
| Texture and phase transition hysteresis in epitaxially integrated VO2 films on TiN/Si (100) AR Singh, S Vura, SK Parate, A Venugopalarao, S Raghavan, P Nukala, ... Materialia 34, 102085, 2024 | 1 | 2024 |
| Free standing epitaxial oxides through remote epitaxy: the role of the evolving graphene microstructure A Haque, SK Mandal, SK Parate, P Nukala, S Raghavan Nanoscale 17 (4), 2020-2031, 2025 | | 2025 |
| Electrically driven long-range solid-state amorphization in ferroic In2Se3 G Modi, SK Parate, C Kwon, AC Meng, U Khandelwal, A Tullibilli, ... Nature, 1-7, 2024 | | 2024 |
| Epitaxial growth and stabilization of perovskite phase EuNiO3 thin films through RF sputtering BK De, SK Parate, K Biswas, P Nukala arXiv preprint arXiv:2410.22868, 2024 | | 2024 |
| Epitaxial growth and stabilization of perovskite phase EuNiO3 thin films through RF sputtering B Krishna De, SK Parate, K Biswas, P Nukala arXiv e-prints, arXiv: 2410.22868, 2024 | | 2024 |
| Wavelength-dependent anisotropic light-matter interaction in 2D ferroelectric In2Se3 D Jangra, BK De, P Sharma, K Chakraborty, S Parate, AK Yogi, R Mittal, ... arXiv preprint arXiv:2409.17570, 2024 | | 2024 |
| Room temperature Mott transistor based on resistive switching in disordered V2O3 films grown on Si BK De, VG Sathe, P Sharma, SK Parate, HS Kunwar, P Nukala, SB Roy arXiv preprint arXiv:2407.12507, 2024 | | 2024 |
| Room temperature Mott transistor based on resistive switching in disordered V2O3 films grown on Si B Krishna De, VG Sathe, P Sharma, SK Parate, H Singh Kunwar, ... arXiv e-prints, arXiv: 2407.12507, 2024 | | 2024 |
| A 3.2 V Binary Layered Oxide Cathode for Potassium‐Ion Batteries PK Jha, SK Parate, K Sada, K Yoshii, T Masese, P Nukala, G Sai Gautam, ... Small, 2402204, 2024 | | 2024 |
| Record cryogenic cooling in ferroelectric hafnia proximity induced via Mott transition SK Parate, BK De, P Nukala arXiv preprint arXiv:2403.18475, 2024 | | 2024 |
| Positive Magneto‐Electric Couplings in Epitaxial Multiferroic SrMnO3 Thin Film AK Mandal, S Chowdhury, SK Parate, A Surampalli, R Rawat, K Biswas, ... Advanced Functional Materials, 2414855, 2024 | | 2024 |
Pavan NUKALAIndian Institute of ScienceПодтвержден адрес электронной почты в домене iisc.ac.in