Hardhyan Sheoran

Процитировано

	Все	Начиная с 2020 г.
Статистика цитирования	312	311
h-индекс	9	9
i10-индекс	8	8

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Rajendra SinghIndian Institute of Technology DelhiПодтвержден адрес электронной почты в домене physics.iitd.ac.in
Dr. N. ManikanthababuIngram School of Engineering, TSU, TexasПодтвержден адрес электронной почты в домене txstate.edu
Shuchi KaushikIMEC Belgium, IIT DelhiПодтвержден адрес электронной почты в домене imec.be
Bhera Ram TakTrinity College DublinПодтвержден адрес электронной почты в домене tcd.ie
Dr. Vidya Nand SinghPrincipal Scientist/ Associate Professor (AcSIR), CSIR- National Physical Laboratory, New DelhiПодтвержден адрес электронной почты в домене nplindia.org
Dr. Sanju RaniCSIR NPL, IIT Mandi, IPR GandhinagarПодтвержден адрес электронной почты в домене acsir.res.in
Manoj kumarCSIR-national Physical Laboratory, RMIT University Melbourne AustraliaПодтвержден адрес электронной почты в домене acsir.res.in
Chennupati JagadishAustralian National UniversityПодтвержден адрес электронной почты в домене anu.edu.au
Dipankar ChughAustralian National UniversityПодтвержден адрес электронной почты в домене anu.edu.au

Hardhyan Sheoran

Indian Institute of Technology Delhi

Подтвержден адрес электронной почты в домене physics.iitd.ac.in

Wide Bandgap Semiconductors Power Devices Schottky UV HEMT


Название По числу цитат По году По названию	Процитировано Процитировано	Год
A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications H Sheoran, V Kumar, R Singh ACS Applied Electronic Materials 4 (6), 2589-2628, 2022	73	2022
Temperature-dependent electrical characteristics of Ni/Au vertical Schottky barrier diodes on β-Ga2O3 epilayers H Sheoran, BR Tak, N Manikanthababu, R Singh ECS Journal of Solid State Science and Technology 9 (5), 055004, 2020	51	2020
High Performance of Zero-Power-Consumption MOCVD-Grown β-Ga₂O₃-Based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature … H Sheoran, S Fang, F Liang, Z Huang, S Kaushik, N Manikanthababu, ... ACS Applied Materials & Interfaces 14 (46), 52096-52107, 2022	49	2022
Rapidly responding room temperature NO2 gas sensor based on SnSe nanostructured film S Rani, M Kumar, H Sheoran, R Singh, VN Singh Materials Today Communications 30, 103135, 2022	40	2022
Review of Radiation-Induced Effects on β-Ga₂O₃ Materials and Devices N Manikanthababu, H Sheoran, P Siddham, R Singh Crystals 12 (7), 1009, 2022	25	2022
Deep-ultraviolet photodetectors based on hexagonal boron nitride nanosheets enhanced by localized surface plasmon resonance in Al nanoparticles S Kaushik, S Karmakar, RK Varshney, H Sheoran, D Chugh, C Jagadish, ... ACS Applied Nano Materials 5 (5), 7481-7491, 2022	19	2022
Investigation of a vertical 2D/3D semiconductor heterostructure based on GaSe and Ga2O3 S Sorifi, S Kaushik, H Sheoran, R Singh Journal of Physics D: Applied Physics 55 (36), 365105, 2022	13	2022
Electrical characteristics and defect dynamics induced by swift heavy ion irradiation in Pt/PtO/-Ga₂O₃ vertical Schottky barrier diodes N Manikanthababu, H Sheoran, K Prajna, SA Khan, K Asokan, JV Vas, ... IEEE Transactions on Electron Devices 69 (11), 5996-6001, 2022	12	2022
Exploring current conduction mechanisms in 6 MeV ion irradiated Au/SiO₂/beta-Ga₂O₃ metal-oxide-semiconductor devices N Manikanthababu, BR Tak, H Sheoran, K Prajna, BK Panigrahi, R Singh 2020 5th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2020	9	2020
Study of electrical characteristics of high quality Pt SBDs fabricated on HVPE-Grown β-Ga2O3 epilayers in a wide temperature range (80–525 K) H Sheoran, JK Kaushik, R Singh Materials Science in Semiconductor Processing 165, 107606, 2023	7	2023
Synthesis of a large area ReS 2 thin film by CVD for in-depth investigation of resistive switching: effects of metal electrodes, channel width and noise behaviour P Aggarwal, H Sheoran, P Bisht, OK Prasad, CH Chung, EY Chang, ... Nanoscale 15 (34), 14109-14121, 2023	6	2023
High-performance and low-power consumption deep UV photodetectors based on MOCVD-grown ZnGa2O4 epilayers with high temperature functionality T Khan, H Sheoran, FG Tarntair, RH Horng, R Singh Materials Science in Semiconductor Processing 179, 108418, 2024	4	2024
Investigation of High Performance Schottky Diodes on Ga2O3 Epilayer using Cu with High Barrier Height, High Temperature Stability and Repeatability H Sheoran, R Singh Journal of Physics D: Applied Physics 56 (40), 405113, 2023	3	2023
MBE-grown ZnTe epitaxial layer based broadband photodetector with high response and excellent switching characteristics S Tyagi, H Sheoran, UR Meena, S Tiwari, P Mishra, S Kumar, R Singh Semiconductor Science and Technology 39 (9), 095005, 2024	1	2024
Investigation of traps in halide vapor-phase epitaxy-grown β-Ga2O3 epilayers/n+-Ga2O3 using deep-level transient spectroscopy H Sheoran, JK Kaushik, V Kumar, R Singh Semiconductor Science and Technology 39 (12), 125007, 2024		2024
Investigation of Traps in AlGaN/GaN HEMT Epitaxial Structure Using Conductance Method Chanchal, AK Visvkarma, H Sheoran, A Malik, R Laishram, DS Rawal, ... International Symposium on VLSI Design and Test, 76-84, 2022		2022
Review of Radiation-Induced Effects on β-Ga2O3 Materials and Devices. Crystals 2022, 12, 1009 N Manikanthababu, H Sheoran, P Siddham, R Singh s Note: MDPI stays neutral with regard to jurisdictional claims in published …, 2022		2022

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