Ashraful Ghani Bhuiyan

Процитировано

	Все	Начиная с 2020 г.
Статистика цитирования	2069	541
h-индекс	15	10
i10-индекс	24	10

140

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Соавторы

Akio YamamotoUniversity of FukuiПодтвержден адрес электронной почты в домене u-fukui.ac.jp
Dr. Md Tanvir HasanSenior Research Fellow, University of Michigan, Ann Arbor, USAПодтвержден адрес электронной почты в домене umich.edu
Abu Syed Md. Jannatul Islam, PhDAssociate Professor, Dept. of Electrical and Electronic Engineering (EEE), KUET, Khulna-9203, BDПодтвержден адрес электронной почты в домене eee.kuet.ac.bd
Jeongwon Park (JP)Electrical and Biomedical Engineering, University of Nevada Reno, USA, EECS, uOttawa, CanadaПодтвержден адрес электронной почты в домене unr.edu
Md Tawabur Rahman, Ph.D.Professor, Dept. of EEE, Khulna University of Engineering & TechnologyПодтвержден адрес электронной почты в домене eee.kuet.ac.bd
Naim Ferdous, PhDAssistant Professor, Dept. of EEE, BSMRSTU, Gopalganj, BangladeshПодтвержден адрес электронной почты в домене bsmrstu.edu.bd
Valery Yu. DavydovDr. Sci., Chief Researcher, Ioffe InstituteПодтвержден адрес электронной почты в домене mail.ioffe.ru
Khalid N. AnindyaPostdoctoral Researcher, Department of Physics, McGill UniversityПодтвержден адрес электронной почты в домене mcgill.ca
Md Fahim Al FattahUniversity of Waterloo, CanadaПодтвержден адрес электронной почты в домене uwaterloo.ca
Md Mottaleb Hossain, PhDTechnology Development Engineer at Intel Corporation, NM, USAПодтвержден адрес электронной почты в домене unm.edu
Amit Kumer PodderAssistant Professor, EEE Department, KUET & Graduate Research Assistant, NCSUПодтвержден адрес электронной почты в домене eee.kuet.ac.bd
Md Jahirul IslamProfessor, Khulna University of Engineering & Technology, BangladeshПодтвержден адрес электронной почты в домене eee.kuet.ac.bd
Hossain Mansur Resalat FaruqueGraduate Research Associate, Arizona State UniversityПодтвержден адрес электронной почты в домене asu.edu
Dr Md Azim UllahAcademic Staff (Teaching and Research), Swinburne University of TechnologyПодтвержден адрес электронной почты в домене swin.edu.au
Zahid Hasan MahmoodUniversity of DhakaПодтвержден адрес электронной почты в домене univdhaka.edu
Md Arafat HossainKhulna University of Engineering and Technology; Past: University of SydneyПодтвержден адрес электронной почты в домене eee.kuet.ac.bd

Ashraful Ghani Bhuiyan

Professor of Electrical and Electronic Engineering, Khulna University of Engineering & Technology

Подтвержден адрес электронной почты в домене eee.kuet.ac.bd - Главная страница

Semiconductor growth and characterization. III-nitride semiconductors and their devices. High-efficiency solar cells and their m


Название По числу цитат По году По названию	Процитировано Процитировано	Год
Indium nitride (InN): A review on growth, characterization, and properties AG Bhuiyan, A Hashimoto, A Yamamoto Journal of applied physics 94 (5), 2779-2808, 2003	1097	2003
InGaN solar cells: present state of the art and important challenges AG Bhuiyan, K Sugita, A Hashimoto, A Yamamoto IEEE Journal of photovoltaics 2 (3), 276-293, 2012	243	2012
Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy AG Bhuiyan, K Sugita, K Kasashima, A Hashimoto, A Yamamoto, ... Applied physics letters 83 (23), 4788-4790, 2003	127	2003
Anomalous temperature dependent thermal conductivity of two-dimensional silicon carbide ASMJ Islam, MS Islam, N Ferdous, J Park, AG Bhuiyan, A Hashimoto Nanotechnology 30 (44), 445707, 2019	59	2019
Anisotropic mechanical behavior of two dimensional silicon carbide: effect of temperature and vacancy defects ASMJ Islam, MS Islam, N Ferdous, J Park, AG Bhuiyan, A Hashimoto Materials Research Express 6 (12), 125073, 2019	39	2019
Two dimensional electron gas in InN-based heterostructures: Effects of spontaneous and piezoelectric polarization MT Hasan, AG Bhuiyan, A Yamamoto Solid-State Electronics 52 (1), 134-139, 2008	34	2008
Metal-organic vapor-phase epitaxial growth of InGaN and InAlN for multi-junction tandem solar cells A Yamamoto, K Sugita, AG Bhuiyan, A Hashimoto, N Narita Materials for Renewable and Sustainable Energy 2, 1-9, 2013	30	2013
High temperature growth of InN on GaP (1 1 1) B substrate using a new two-step growth method AG Bhuiyan, A Yamamoto, A Hashimoto, Y Ito Journal of crystal growth 236 (1-3), 59-65, 2002	30	2002
Refractive index, absorption coefficient, and photoelastic constant: key parameters of InGaAs material relevant to InGaAs-based device performance MS Alam, MS Rahman, MR Islam, AG Bhuiyan, M Yamada 2007 IEEE 19th International Conference on Indium Phosphide & Related …, 2007	29	2007
MOVPE growth of high quality p-type InGaN with intermediate In compositions K Sasamoto, T Hotta, K Sugita, AG Bhuiyan, A Hashimoto, A Yamamoto, ... Journal of crystal growth 318 (1), 492-495, 2011	27	2011
Laser‐Assisted Metalorganic Vapor‐Phase Epitaxy (LMOVPE) of Indium Nitride (InN) AG Bhuiyan, T Tanaka, A Yamamoto, A Hashimoto physica status solidi (a) 194 (2), 502-505, 2002	24	2002
Tunable electronic properties in bismuthene/2D silicon carbide van der Waals heterobilayer JD Sarker, MS Islam, N Ferdous, PP Sarker, AG Bhuiyan, T Makino, ... Japanese Journal of Applied Physics 59 (SC), SCCC03, 2019	20	2019
MOVPE growth of InGaN on Si (111) substrates with an intermediate range of In content AG Bhuiyan, A Mihara, T Esaki, K Sugita, A Hashimoto, A Yamamoto, ... physica status solidi c 9 (3‐4), 670-672, 2012	19	2012
Growth and characterization of epitaxial InN films on sapphire substrate using an ArF excimer laser-assisted metalorganic vapor-phase epitaxy (LA-MOVPE) AG Bhuiyan, T Tanaka, K Kasashima, A Hashimoto, A Yamamoto Japanese journal of applied physics 42 (12R), 7284, 2003	19	2003
Design and performance of inxga1-xn-based mj solar cells MR Islam, MT Hasan, AG Bhuiyan, MR Islam, A Yamamoto IETECH Journal of Electrical Analysis 2 (4), 237-243, 2008	15	2008
Growth mechanism of InN nucleation layers on epitaxial graphene using metal organic vapor phase epitaxy and radio-frequency molecular beam epitaxy AG Bhuiyan, D Ishimaru, A Hashimoto Crystal Growth & Design 20 (3), 1415-1421, 2020	14	2020
Proposal of high performance 1.55 µm quantum dot heterostructure laser using InN MM Hossain, M Abdullah-Al Humayun, MT Hasan, AG Bhuiyan, ... IEICE transactions on electronics 95 (2), 255-261, 2012	13	2012
Interlayer vacancy effects on the phonon modes in AB stacked bilayer graphene nanoribbon KN Anindya, MS Islam, J Park, AG Bhuiyan, A Hashimoto Current Applied Physics 20 (4), 572-581, 2020	12	2020
MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of In content K Sugita, M Tanaka, K Sasamoto, AG Bhuiyan, A Hashimoto, ... Journal of crystal growth 318 (1), 505-508, 2011	11	2011
2DEG properties in InGaN/InN/InGaN‐based double channel HEMTs MT Hasan, MR Kaysir, MS Islam, AG Bhuiyan, MR Islam, A Hashimoto, ... physica status solidi c 7 (7‐8), 1997-2000, 2010	11	2010

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