| Promising monolayer membranes for CO2/N2/CH4 separation: Graphdiynes modified respectively with hydrogen, fluorine, and oxygen atoms L Zhao, P Sang, S Guo, X Liu, J Li, H Zhu, W Guo Applied Surface Science 405, 455-464, 2017 | 63 | 2017 |
| Excellent membranes for hydrogen purification: Dumbbell-shaped porous γ-graphynes P Sang, L Zhao, J Xu, Z Shi, S Guo, Y Yu, H Zhu, Z Yan, W Guo International Journal of Hydrogen Energy 42 (8), 5168-5176, 2017 | 47 | 2017 |
| Semiconducting silicene: A two-dimensional silicon allotrope with hybrid honeycomb-kagome lattice P Sang, Q Wang, W Wei, F Wang, Y Li, J Chen ACS Materials Letters 3 (8), 1181-1188, 2021 | 35 | 2021 |
| In-depth understanding of polarization switching kinetics in polycrystalline Hf0. 5Zr0. 5O2 ferroelectric thin film: A transition from NLS to KAI W Wei, W Zhang, L Tai, G Zhao, P Sang, Q Wang, F Chen, M Tang, ... 2021 IEEE International Electron Devices Meeting (IEDM) 19 (1-19.1), 4, 2021 | 24 | 2021 |
| Toward high-performance monolayer graphdiyne transistor: Strain engineering matters P Sang, X Ma, Q Wang, W Wei, F Wang, J Wu, X Zhan, Y Li, J Chen Applied Surface Science 536, 147836, 2021 | 22 | 2021 |
| Two-dimensional silicon atomic layer field-effect transistors: Electronic property, metal-semiconductor contact, and device performance P Sang, Q Wang, W Wei, L Tai, X Zhan, Y Li, J Chen IEEE Transactions on Electron Devices 69 (4), 2173-2179, 2022 | 21 | 2022 |
| Temperature-dependent Defect Behaviors in Ferroelectric Hf0.5Zr0.5O2 Thin Film: Re-wakeup Phenomenon and Underlying Mechanisms X Li, J Wu, L Tai, W Wei, P Sang, Y Feng, B Chen, G Zhao, X Zhan, ... 2022 International Electron Devices Meeting (IEDM), 32.3. 1-32.3. 4, 2022 | 15 | 2022 |
| Hydrogenated borophene as a promising two-dimensional semiconductor for nanoscale field-effect transistors: A computational study P Sang, Q Wang, W Wei, Y Li, J Chen ACS Applied Nano Materials 4 (11), 11931-11937, 2021 | 14 | 2021 |
| Tunneling Junction as Cold Source: Toward Steep-Slope Field-Effect Transistors Based on Monolayer MoS2 Q Wang, P Sang, F Wang, W Wei, J Chen IEEE Transactions on Electron Devices 68 (9), 4758-4761, 2021 | 14 | 2021 |
| Cold source engineering towards sub-60mV/dec p-type field-effect-transistors (pFETs): Materials, structures, and doping optimizations Q Wang, P Sang, X Ma, F Wang, W Wei, W Zhang, Y Li, J Chen 2020 IEEE International Electron Devices Meeting (IEDM), 22.4. 1-22.4. 4, 2020 | 14 | 2020 |
| Towards Low-thermal-budget Processing in Ferroelectric Hf0.5Zr0.5O2 Thin Films by Ozone Interface Oxidation L Tai, W Wei, P Jiang, P Sang, X Li, G Zhao, X Dou, X Zhan, Q Luo, J Wu, ... IEEE Electron Device Letters, 2023 | 11 | 2023 |
| Organic single‐crystal light‐emitting transistors with external quantum efficiency over 20% J Deng, Z Zhang, P Sang, S Yin, S Zhang, Y Li, B Yang, C Gu, Y Ma Aggregate 4 (4), e313, 2023 | 9 | 2023 |
| Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf0.5Zr0.5O2 Films L Tai, W Wei, P Sang, X Li, G Zhao, P Jiang, P Yuan, Q Luo, X Zhan, J Wu, ... IEEE Electron Device Letters 44 (5), 753-756, 2023 | 9 | 2023 |
| Strain engineered C31 field-effect-transistors: a new strategy to break 60 mV/decade by using electron injection from intrinsic isolated states Q Wang, P Sang, F Wang, W Wei, Y Li, J Chen Applied Physics Express 14 (7), 074003, 2021 | 9 | 2021 |
| Functionalized MoS2 Nanoribbons for Intrinsic Cold-Source Transistors: A Computational Study Q Wang, P Sang, W Wei, Y Li, J Chen ACS Applied Nano Materials 5 (1), 1178-1184, 2022 | 8 | 2022 |
| Polarization switching pathways of ferroelectric Zr-doped HfO2 based on the first-principles calculation X Dou, W Wei, P Sang, L Tai, X Li, X Zhan, J Wu, J Chen Applied Physics Letters 124 (9), 2024 | 7 | 2024 |
| Extending the scaling limit of silicon channel transistors through hhk-silicene monolayer: A computational study P Sang, Q Wang, W Wei, Y Li, C Li, J Chen IEEE Transactions on Electron Devices 69 (6), 3494-3498, 2022 | 7 | 2022 |
| In-depth investigation of seed layer engineering in ferroelectric Hf0. 5Zr0. 5O2 film: Wakeup-free achievement and reliability mechanisms X Li, J Wu, L Tai, X Dou, P Sang, H Xu, X Zhan, X Wang, J Chen IEEE Transactions on Electron Devices 71 (2), 1048-1053, 2024 | 4 | 2024 |
| Tunable electrical contacts in two-dimensional silicon field-effect transistors: The significance of surface engineering P Sang, Q Wang, G Yi, J Wu, Y Li, J Chen Applied Surface Science 614, 156170, 2023 | 4 | 2023 |
| Organic steep-slope nano-FETs: A rational design based on two-dimensional covalent-organic frameworks X Gong, L Xu, P Sang, Y Li, J Chen Organic Electronics 100, 106379, 2022 | 3 | 2022 |