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Esteban Garzón
Esteban Garzón
Research Fellow, DIMES, University of Calabria
Подтвержден адрес электронной почты в домене unical.it - Главная страница
Название
Процитировано
Процитировано
Год
AM4: MRAM Crossbar Based CAM/TCAM/ACAM/AP for In-Memory Computing
E Garzón, M Lanuzza, A Teman, L Yavits
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 13 (1 …, 2023
392023
Exploiting STT-MRAMs for cryogenic non-volatile cache applications
E Garzón, R De Rose, F Crupi, A Teman, M Lanuzza
IEEE Transactions on Nanotechnology 20, 123-128, 2021
362021
Gain-cell embedded DRAM under cryogenic operation—A first study
E Garzón, Y Greenblatt, O Harel, M Lanuzza, A Teman
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 29 (7 …, 2021
342021
Hamming distance tolerant content-addressable memory (HD-CAM) for DNA classification
E Garzón, R Golman, Z Jahshan, R Hanhan, N Vinshtok-Melnik, ...
IEEE Access 10, 28080-28093, 2022
322022
Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework
E Garzon, R De Rose, F Crupi, L Trojman, G Finocchio, M Carpentieri, ...
Integration 71, 56-69, 2020
292020
Assessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework
E Garzón, R De Rose, F Crupi, L Trojman, M Lanuzza
Microelectronic Engineering 215, 111009, 2019
292019
A 0.05 mm², 350 mv, 14 nw fully-integrated temperature sensor in 180-nm cmos
B Zambrano, E Garzón, S Strangio, F Crupi, M Lanuzza
IEEE Transactions on Circuits and Systems II: Express Briefs 69 (3), 749-753, 2021
282021
EDAM: Edit distance tolerant approximate matching content addressable memory
R Hanhan, E Garzón, Z Jahshan, A Teman, M Lanuzza, L Yavits
Proceedings of the 49th Annual International Symposium on Computer …, 2022
262022
Simulation analysis of DMTJ-based STT-MRAM operating at cryogenic temperatures
E Garzón, R De Rose, F Crupi, M Carpentieri, A Teman, M Lanuzza
IEEE Transactions on Magnetics 57 (7), 1-6, 2021
242021
Embedded memories for cryogenic applications
E Garzón, A Teman, M Lanuzza
Electronics 11 (1), 61, 2021
222021
Reconfigurable CMOS/STT-MTJ non-volatile circuit for logic-in-memory applications
E Garzón, B Zambrano, T Moposita, R Taco, LM Prócel, L Trojman
2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS), 1-4, 2020
212020
AIDA: Associative in-memory deep learning accelerator
E Garzón, A Teman, M Lanuzza, L Yavits
IEEE Micro 42 (6), 67-75, 2022
192022
XNOR-bitcount operation exploiting computing-in-memory with STT-MRAMs
A Musello, E Garzón, M Lanuzza, LM Prócel, R Taco
IEEE Transactions on Circuits and Systems II: Express Briefs 70 (3), 1259-1263, 2023
182023
Ultralow voltage finFET-versus TFET-based STT-MRAM cells for IoT applications
E Garzón, M Lanuzza, R Taco, S Strangio
Electronics 10 (15), 1756, 2021
182021
Dash-cam: Dynamic approximate search content addressable memory for genome classification
Z Jahshan, I Merlin, E Garzón, L Yavits
Proceedings of the 56th Annual IEEE/ACM International Symposium on …, 2023
152023
Relaxing non-volatility for energy-efficient DMTJ based cryogenic STT-MRAM
E Garzón, R De Rose, F Crupi, L Trojman, A Teman, M Lanuzza
Solid-State Electronics 184, 108090, 2021
152021
A low-energy DMTJ-based ternary content-addressable memory with reliable sub-nanosecond search operation
E Garzón, L Yavits, G Finocchio, M Carpentieri, A Teman, M Lanuzza
IEEE Access 11, 16812-16819, 2023
132023
A 0.6 v–1.8 v compact temperature sensor with 0.24 c resolution,±1.4 c inaccuracy and 1.06 nj per conversion
B Zambrano, E Garzón, S Strangio, G Iannaccone, M Lanuzza
IEEE Sensors Journal 22 (12), 11480-11488, 2022
132022
Exploiting double-barrier MTJs for energy-efficient nanoscaled STT-MRAMs
E Garzón, R De Rose, F Crupi, L Trojman, G Finocchio, M Carpentieri, ...
2019 16th International Conference on Synthesis, Modeling, Analysis and …, 2019
132019
Approximate content-addressable memories: a review
E Garzón, L Yavits, A Teman, M Lanuzza
Chips 2 (2), 70-82, 2023
102023
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