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Jean-Baptiste Rodriguez
Jean-Baptiste Rodriguez
CNRS - University of Montpellier
Подтвержден адрес электронной почты в домене cnrs.fr
Название
Процитировано
Процитировано
Год
nBn structure based on InAs∕ GaSb type-II strained layer superlattices
JB Rodriguez, E Plis, G Bishop, YD Sharma, H Kim, LR Dawson, ...
Applied Physics Letters 91 (4), 2007
3462007
MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection
JB Rodriguez, P Christol, L Cerutti, F Chevrier, A Joullié
Journal of crystal growth 274 (1-2), 6-13, 2005
1572005
Mid-IR focal plane array based on type-II InAs∕ GaSb strain layer superlattice detector with nBn design
HS Kim, E Plis, JB Rodriguez, GD Bishop, YD Sharma, LR Dawson, ...
Applied Physics Letters 92 (18), 2008
1522008
Silicon-based photonic integration beyond the telecommunication wavelength range
G Roelkens, U Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ...
IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 394-404, 2014
1512014
Bias dependent dual band response from InAs∕ Ga (In) Sb type II strain layer superlattice detectors
A Khoshakhlagh, JB Rodriguez, E Plis, GD Bishop, YD Sharma, HS Kim, ...
Applied Physics Letters 91 (26), 2007
1232007
Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm
E Ryckeboer, A Gassenq, M Muneeb, N Hattasan, S Pathak, L Cerutti, ...
Optics express 21 (5), 6101-6108, 2013
1152013
Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si
JR Reboul, L Cerutti, JB Rodriguez, P Grech, E Tournié
Applied Physics Letters 99 (12), 121113-121113-3, 2011
1082011
Quantum cascade lasers grown on silicon
H Nguyen-Van, AN Baranov, Z Loghmari, L Cerutti, JB Rodriguez, ...
Scientific reports 8 (1), 7206, 2018
1072018
Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes
R Chaghi, C Cervera, H Aït-Kaci, P Grech, JB Rodriguez, P Christol
Semiconductor Science and Technology 24 (6), 065010, 2009
1042009
GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 µm at Room Temperature
L Cerutti, JB Rodriguez, E Tournie
IEEE photonics technology letters 22 (8), 553-555, 2010
952010
Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate
E Plis, JB Rodriguez, G Balakrishnan, YD Sharma, HS Kim, T Rotter, ...
Semiconductor Science and Technology 25 (8), 085010, 2010
892010
Silicon-based heterogeneous photonic integrated circuits for the mid-infrared
G Roelkens, U Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ...
Optical Materials Express 3 (9), 1523-1536, 2013
882013
Localized surface plasmon resonances in highly doped semiconductors nanostructures
V N'Tsame Guilengui, L Cerutti, JB Rodriguez, E Tournié, T Taliercio
Applied Physics Letters 101 (16), 2012
822012
Type II InAs∕ GaSb strain layer superlattice detectors with p-on-n polarity
E Plis, JB Rodriguez, HS Kim, G Bishop, YD Sharma, LR Dawson, ...
Applied Physics Letters 91 (13), 2007
812007
Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization
C Cervera, JB Rodriguez, JP Perez, H Aït-Kaci, R Chaghi, L Konczewicz, ...
Journal of Applied Physics 106 (3), 2009
802009
Modeling of electrical characteristics of midwave type II InAs∕ GaSb strain layer superlattice diodes
V Gopal, E Plis, JB Rodriguez, CE Jones, L Faraone, S Krishna
Journal of Applied Physics 104 (12), 2008
802008
Universal description of III-V/Si epitaxial growth processes
I Lucci, S Charbonnier, L Pedesseau, M Vallet, L Cerutti, JB Rodriguez, ...
Physical review materials 2 (6), 060401, 2018
752018
nBn detectors based on InAs∕ GaSb type-II strain layer superlattice
G Bishop, E Plis, JB Rodriguez, YD Sharma, HS Kim, LR Dawson, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
752008
Interface analysis of InAs/GaSb superlattice grown by MBE
B Satpati, JB Rodriguez, A Trampert, E Tournié, A Joullié, P Christol
Journal of Crystal Growth 301, 889-892, 2007
732007
Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip
A Gassenq, N Hattasan, L Cerutti, JB Rodriguez, E Tournié, G Roelkens
Optics Express 20 (11), 11665-11672, 2012
722012
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Статьи 1–20